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Vishay Siliconix SI3443CDV-T1-E3 MOSFET P-CH 20V 5.97A 6TSOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI3443CDV-T1-E3	Digi-Reel	21,429		1	1 $0.88 10 $0.55 100 $0.88 1000 $0.24674 10000 $0.24674	Buy Now
	SI3443CDV-T1-E3	Cut Tape	21,429		1	1 $0.88 10 $0.55 100 $0.88 1000 $0.24674 10000 $0.24674	Buy Now
	SI3443CDV-T1-E3	Reel	18,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.21265	Buy Now
Quest Components	SI3443CDV-T1-E3		60			1 $0.45 10 $0.45 100 $0.3 1000 $0.3 10000 $0.3	Buy Now
Vishay Siliconix SI3443CDV-T1-GE3 MOSFET P-CH 20V 5.97A 6TSOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI3443CDV-T1-GE3	Digi-Reel	13,925		1	1 $0.8 10 $0.496 100 $0.8 1000 $0.2202 10000 $0.2202	Buy Now
	SI3443CDV-T1-GE3	Cut Tape	13,925		1	1 $0.8 10 $0.496 100 $0.8 1000 $0.2202 10000 $0.2202	Buy Now
	SI3443CDV-T1-GE3	Reel	12,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.18917	Buy Now
Bristol Electronics	SI3443CDV-T1-GE3		170			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix SI3443DDV-T1-BE3 P-CHANNEL 20-V (D-S) MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI3443DDV-T1-BE3	Cut Tape	11,954		1	1 $0.44 10 $0.267 100 $0.44 1000 $0.11219 10000 $0.11219	Buy Now
	SI3443DDV-T1-BE3	Digi-Reel	11,954		1	1 $0.44 10 $0.267 100 $0.44 1000 $0.11219 10000 $0.11219	Buy Now
	SI3443DDV-T1-BE3	Reel	9,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.0946	Buy Now
Vishay Siliconix SI3443CDV-T1-BE3 P-CHANNEL 20-V (D-S) MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI3443CDV-T1-BE3	Digi-Reel	7,761		1	1 $0.8 10 $0.496 100 $0.8 1000 $0.2202 10000 $0.2202	Buy Now
	SI3443CDV-T1-BE3	Cut Tape	7,761		1	1 $0.8 10 $0.496 100 $0.8 1000 $0.2202 10000 $0.2202	Buy Now
	SI3443CDV-T1-BE3	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.18917	Buy Now
Vishay Siliconix SI3443BDV-T1-BE3 MOSFET P-CH 20V 3.6A 6TSOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI3443BDV-T1-BE3	Digi-Reel	5,300		1	1 $1.04 10 $0.651 100 $1.04 1000 $0.29737 10000 $0.29737	Buy Now
	SI3443BDV-T1-BE3	Cut Tape	5,300		1	1 $1.04 10 $0.651 100 $1.04 1000 $0.29737 10000 $0.29737	Buy Now
	SI3443BDV-T1-BE3	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.25764	Buy Now

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SI3443 Datasheets (20)

Part	Manufacturer	Description	Datasheet Type	PDF
SI3443BDV	Vishay Siliconix	MOSFETs	Original	PDF
SI3443BDV-T1-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 3.6A 6-TSOP	Original	PDF
SI3443BDV-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 3.6A 6-TSOP	Original	PDF
SI3443CDV-T1-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 5.97A 6TSOP	Original	PDF
SI3443CDV-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 5.97A 6TSOP	Original	PDF
SI3443DDV-T1-GE3	Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHAN 20V TSOP6S	Original	PDF
SI3443DV	Fairchild Semiconductor	P-Channel 2.5V Specified PowerTrench - MOSFET	Original	PDF
SI3443DV	International Rectifier	HEXFET Power Mosfet	Original	PDF
SI3443DV	International Rectifier	HEXFET Power MOSFET	Original	PDF
Si3443DV	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
SI3443DV	Vishay	P-Channel 2.5-V (G-S) MOSFET	Original	PDF
Si3443DV	International Rectifier	HEXFET Power MOSFET	Scan	PDF
SI3443DV_NF073	Fairchild Semiconductor	P-Channel 2.5V Specified PowerTrench MOSFET	Original	PDF
SI3443DV_NL	Fairchild Semiconductor	P-Channel 2.5V Specified PowerTrench MOSFET	Original	PDF

SI3443DVPBF	InterFET	HEXFET Power MOSFET	Original	PDF
SI3443DV_Q	Fairchild Semiconductor	P-Channel 2.5V Specified PowerTrench MOSFET	Original	PDF
Si3443DV SPICE Device Model	Vishay	P-Channel 2.5-V (G-S) MOSFET	Original	PDF
SI3443DV-T1	Vishay Intertechnology	P-Channel 2.5-V (G-S) Rated MOSFET	Original	PDF
SI3443DVTR	International Rectifier	-20V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package	Original	PDF
SI3443DVTRPBF	International Rectifier		Original	PDF

SI3443 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
mosfet p-channel 300v irf Abstract: P-Channel 200V MOSFET TSOP6 Si3443DVPbF IRF5850 IRF5851 IRF5852 mosfet 23 Tsop-6 PD-95240 p-channel 250V 30A power mosfet IRF 100A 500V Text: PD-95240 Si3443DVPbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel -2.5V Rated Lead-Free D A D 1 6 2 5 3 4 VDSS = -20V D G D S RDS on = 0.065Ω Top View Description These P-channel MOSFETs from International Rectifier	Original	PD-95240 Si3443DVPbF OT-23. mosfet p-channel 300v irf P-Channel 200V MOSFET TSOP6 IRF5850 IRF5851 IRF5852 mosfet 23 Tsop-6 PD-95240 p-channel 250V 30A power mosfet IRF 100A 500V	PDF
SI3443DV Abstract: No abstract text available Text: Si3443DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.065 @ VGS = –4.5 V "4.4 0.090 @ VGS = –2.7 V "3.7 0.100 @ VGS = –2.5 V "3.5 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm	Original	Si3443DV S-54948--Rev. 29-Sep-97	PDF
SI3443DV-T1-E3 Abstract: SI3443BDV-T1-E3 SI3443DV-T1 74073 Si3443DV SI3443BDV Text: Specification Comparison Vishay Siliconix Si3443BDV vs. Si3443DV Description: P-Channel, 2.5 V G-S MOSFET Package: TSOP-6 Pin Out: Identical Part Number Replacements: Si3443BDV-T1-E3 Replaces Si3443DV-T1-E3 Si3443BDV-T1 Replaces Si3443DV-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted	Original	Si3443BDV Si3443DV Si3443BDV-T1-E3 Si3443DV-T1-E3 Si3443BDV-T1 Si3443DV-T1 06-Nov-06 74073	PDF
Si3443DV Abstract: 70-904 Text: SPICE Device Model Si3443DV P-Channel 2.5-V G-S Rated MOSFET Characteristics • P-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse	Original	Si3443DV 70-904	PDF
Si3443DV-T1 Abstract: Si3443DV-T1-E3 Si3443DV Text: Si3443DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES rDS(on) (W) ID (A) 0.065 @ VGS = −4.5 V −4.5 0.090 @ VGS = −2.7 V −3.8 0.100 @ VGS = −2.5 V −3.7 D TrenchFETr Power MOSFET D 100% Rg Tested TSOP-6 Top View	Original	Si3443DV Si3443DV-T1--E3 18-Jul-08 Si3443DV-T1 Si3443DV-T1-E3	PDF
AN609 Abstract: Si3443BDV 74618 448-48 sony+448-48 115527 Text: Si3443BDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si3443BDV AN609 08-May-07 74618 448-48 sony+448-48 115527	PDF
Si3443DV Abstract: 70-904 Text: SPICE Device Model Si3443DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si3443DV 18-Jul-08 70-904	PDF
SI3443BDV Abstract: Si3443DV Si3443DV-T1-E3 Si3443DV-T1 Si3443BDV-T1-E3 Text: Specification Comparison Vishay Siliconix Si3443BDV vs. Si3443DV Description: P-Channel, 2.5-V G-S MOSFET Package: TSOP-6 Pin Out: Identical Part Number Replacements: Si3443BDV-T1 Replaces Si3443DV-T1 Si3443BDV-T1—E3 (Lead (Pb)-Free version) Replaces Si3443DV-T1—E3	Original	Si3443BDV Si3443DV Si3443BDV-T1 Si3443DV-T1 Si3443BDV-T1--E3 Si3443DV-T1--E3 Si3443DV-T1-E3 Si3443BDV-T1-E3	PDF
Si3443BDV Abstract: No abstract text available Text: Si3443BDV New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES rDS(on) (W) ID (A) 0.060 @ VGS = −4.5 V −4.7 0.090 @ VGS = −2.7 V −3.8 0.100 @ VGS = −2.5 V −3.7 D TrenchFETr Power MOSFET D 100% Rg Tested	Original	Si3443BDV Si3443BDV-T1--E3 S-40575--Rev. 29-Mar-04	PDF
SI3443DV-T1 Abstract: No abstract text available Text: Si3443DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES rDS(on) (W) ID (A) 0.065 @ VGS = −4.5 V −4.5 0.090 @ VGS = −2.7 V −3.8 0.100 @ VGS = −2.5 V −3.7 D TrenchFETr Power MOSFET D 100% Rg Tested TSOP-6 Top View	Original	Si3443DV Si3443DV-T1--E3 08-Apr-05 SI3443DV-T1	PDF
Untitled Abstract: No abstract text available Text: Si3443DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.065 @ VGS = –4.5 V "4.4 0.090 @ VGS = –2.7 V "3.7 0.100 @ VGS = –2.5 V "3.5 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm	Original	Si3443DV 08-Apr-05	PDF
Untitled Abstract: No abstract text available Text: Si3443DV Vishay Siliconix P-Channel, 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 RDS(ON) (W) ID (A) 0.065 @ VGS = –4.5 V "4.4 0.090 @ VGS = –2.7 V "3.7 0.100 @ VGS = –2.5 V "3.5 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm	Original	Si3443DV S-54948--Rev. 29-Sep-97	PDF
Si3443CDV Abstract: Si3443CDV-T1-E3 Text: New Product Si3443CDV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.060 at VGS = - 4.5 V - 4.7 0.084 at VGS = - 2.7 V - 3.9 0.100 at VGS = - 2.5 V - 3.4 • TrenchFET Power MOSFET • PWM Optimized • 100 % Rg Tested	Original	Si3443CDV Si3443CDV-T1-E3 08-Apr-05	PDF
P-Channel 200V MOSFET TSOP6 Abstract: No abstract text available Text: PD- 93795 Si3443DV HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel -2.5V Rated D A D 1 6 2 5 3 4 VDSS = -20V D G D RDS on = 0.065Ω S T o p V ie w Description These P-channel MOSFETs from International Rectifier	Original	Si3443DV OT-23. P-Channel 200V MOSFET TSOP6	PDF

Si3443DV Abstract: No abstract text available Text: Si3443DV P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for	Original	Si3443DV	PDF
Untitled Abstract: No abstract text available Text: Si3443DV P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for	Original	Si3443DV	PDF
Si3443DV Abstract: No abstract text available Text: SPICE Device Model Si3443DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si3443DV 17-Apr-01	PDF
Si3443BDV Abstract: 7276 72766 SI3443 Text: SPICE Device Model Si3443BDV Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si3443BDV 18-Jul-08 7276 72766 SI3443	PDF
SI3443DV-T1 Abstract: No abstract text available Text: Si3443DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 20 FEATURES rDS(on) (W) ID (A) 0.065 @ VGS = - 4.5 V - 4.5 0.090 @ VGS = - 2.7 V - 3.8 0.100 @ VGS = - 2.5 V - 3.7 D TrenchFETr Power MOSFET D 100% Rg Tested TSOP-6 Top View 3 mm	Original	Si3443DV Si3443DV-T1 S-31725--Rev. 18-Aug-03	PDF
SI3443CDV-T1-E3 Abstract: Si3443CDV-T1-GE3 SI3443CDV RG132 Text: New Product Si3443CDV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.060 at VGS = - 4.5 V - 4.7 0.084 at VGS = - 2.7 V - 3.9 0.100 at VGS = - 2.5 V - 3.4 • Halogen-free According to IEC 61249-2-21	Original	Si3443CDV Si3443CDV-T1-E3 Si3443CDV-T1-GE3 18-Jul-08 RG132	PDF
AN609 Abstract: Si3443DV Text: Si3443DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si3443DV AN609 30-Nov-05	PDF
Untitled Abstract: No abstract text available Text: Si3443DDV www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 RDS(on) (Ω) MAX. ID (A) a, e 0.047 at VGS = -4.5 V -4 0.080 at VGS = -2.7 V -4 0.090 at VGS = -2.5 V • TrenchFET power MOSFET Qg (TYP.) • PWM optimized	Original	Si3443DDV Si3443DDV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: Si3443DV P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for	Original	Si3443DV	PDF
Untitled Abstract: No abstract text available Text: Tem ic Si3443DV Semiconductors P-Channel, 2.5-V G-S Rated MOSFET Product Summary V D S (V ) -2 0 r DS(on) (£2) I d (A ) 0 .0 6 5 @ V Gs = - 4 .5 V ± 4 .4 0 .0 9 0 @ V Gs = - 2 .7 V ± 3 .7 0 .1 0 0 @ V Gs = - 2 . 5 V ± 3 .5 (4 )S Q TSOP-6 Top View 3 mm	OCR Scan	Si3443DV S-54948â 29-Sep-97	PDF

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Vishay Siliconix SI3443CDV-T1-E3

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Vishay Siliconix SI3443BDV-T1-BE3

SI3443 Datasheets (20)

SI3443 Datasheets Context Search

mosfet p-channel 300v irf

SI3443DV

SI3443DV-T1-E3

Si3443DV

Si3443DV-T1

AN609

Si3443DV

SI3443BDV

Si3443BDV

SI3443DV-T1

Untitled

Untitled

Si3443CDV

P-Channel 200V MOSFET TSOP6

Si3443DV

Untitled

Si3443DV

Si3443BDV

SI3443DV-T1

SI3443CDV-T1-E3

AN609

Untitled

Untitled

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