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Vishay Siliconix SI7302DN-T1-E3 MOSFET N-CH 220V 8.4A PPAK1212-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI7302DN-T1-E3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Siliconix SI7302DN-T1-GE3 MOSFET N-CH 220V 8.4A PPAK1212-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI7302DN-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $1.175	Buy Now

SI7302DN Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
Si7302DN-T1-E3		Vishay	Transistor Mosfet N-CH 220V 2.3A 8POWERPAK		Original	PDF
SI7302DN-T1-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 220V 8.4A 1212-8		Original	PDF
SI7302DN-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 220V 8.4A 1212-8		Original	PDF

SI7302DN Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Si7302DN Abstract: No abstract text available Text: SPICE Device Model Si7302DN Vishay Siliconix N-Channel 220-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si7302DN 18-Jul-08	PDF
Untitled Abstract: No abstract text available Text: Si7302DN New Product Vishay Siliconix N-Channel 220-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.320 @ VGS = 10 V 8.4 0.340 @ VGS = 6 V 8.2 VDS (V) 220 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) APPLICATIONS 9 1 nC 9.1 Product Is	Original	Si7302DN Si7302DN-T1--E3 S-50280--Rev. 21-Feb-05	PDF
Si7302DN Abstract: S-51128-Rev SI7302DN-T1-E3 Text: Si7302DN New Product Vishay Siliconix N-Channel 220-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.320 @ VGS = 10 V 8.4 0.340 @ VGS = 6 V 8.2 VDS (V) 220 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) APPLICATIONS 9 1 nC 9.1 RoHS COMPLIANT	Original	Si7302DN Si7302DN-T1--E3 S-51128--Rev. 13-Jun-05 S-51128-Rev SI7302DN-T1-E3	PDF
Untitled Abstract: No abstract text available Text: Si7302DN Vishay Siliconix New Product N-Channel 220-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.320 at VGS = 10 V 8.4 0.340 at VGS = 6 V 8.2 VDS (V) 220 Qg (Typ) • TrenchFET Power MOSFET • 100 % Rg Tested RoHS 9.1 nC APPLICATIONS COMPLIANT	Original	Si7302DN Si7302DN-T1-E3 18-Jul-08	PDF
Si7302DN Abstract: No abstract text available Text: Si7302DN New Product Vishay Siliconix N-Channel 220-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.320 @ VGS = 10 V 8.4 0.340 @ VGS = 6 V 8.2 VDS (V) 220 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) APPLICATIONS 9 1 nC 9.1 RoHS COMPLIANT	Original	Si7302DN Si7302DN-T1--E3 08-Apr-05	PDF
Untitled Abstract: No abstract text available Text: Si7302DN Vishay Siliconix N-Channel 220-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.320 at VGS = 10 V 8.4 0.340 at VGS = 6 V 8.2 VDS (V) 220 Qg (Typ.) 9.1 nC APPLICATIONS PowerPAK 1212-8 • Primary Side Switching S 3.30 mm • Halogen-free According to IEC 61249-2-21	Original	Si7302DN Si7302DN-T1-E3 Si7302DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Si7302DN Abstract: Si7302DN-T1-E3 Text: Si7302DN Vishay Siliconix N-Channel 220-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.320 at VGS = 10 V 8.4 0.340 at VGS = 6 V 8.2 VDS (V) 220 Qg (Typ.) 9.1 nC APPLICATIONS PowerPAK 1212-8 • Primary Side Switching S 3.30 mm • Halogen-free According to IEC 61249-2-21	Original	Si7302DN Si7302DN-T1-E3 Si7302DN-T1-GE3 18-Jul-08	PDF
Untitled Abstract: No abstract text available Text: Si7302DN Vishay Siliconix N-Channel 220-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.320 at VGS = 10 V 8.4 0.340 at VGS = 6 V 8.2 VDS (V) 220 Qg (Typ.) 9.1 nC APPLICATIONS PowerPAK 1212-8 • Primary Side Switching S 3.30 mm • Halogen-free According to IEC 61249-2-21	Original	Si7302DN Si7302DN-T1-E3 Si7302DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: Si7302DN Vishay Siliconix N-Channel 220-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.320 at VGS = 10 V 8.4 0.340 at VGS = 6 V 8.2 VDS (V) 220 Qg (Typ.) 9.1 nC APPLICATIONS PowerPAK 1212-8 • Primary Side Switching S 3.30 mm • Halogen-free According to IEC 61249-2-21	Original	Si7302DN Si7302DN-T1-E3 Si7302DN-T1-GE3 11-Mar-11	PDF
Untitled Abstract: No abstract text available Text: Si7302DN Vishay Siliconix New Product N-Channel 220-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.320 at VGS = 10 V 8.4 0.340 at VGS = 6 V 8.2 VDS (V) 220 Qg (Typ) • TrenchFET Power MOSFET • 100 % Rg Tested RoHS 9.1 nC APPLICATIONS COMPLIANT	Original	Si7302DN Si7302DN-T1-E3 08-Apr-05	PDF
q406 transistor Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS Text: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no	Original	SiP41109 SiP41110 SiP41111 75/2A q406 transistor SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS	PDF
LTC3758 Abstract: LT3578 MMBT3908 LT1480 IHLP2525CZER1ROM 50V 20A step down regulator PA2925NL AN126 100CE10FS AN125 Text: Application Note 126 October 2010 2-Wire Virtual Remote Sensing for Voltage Regulators Clairvoyance Marries Remote Sensing Jim Williams, Jesus Rosales, Kurk Mathews, Tom Hack Introduction Wires and connectors have resistance. This simple, unavoidable truth dictates that a power source’s remote load	Original	AN125 IntLT4180 AN126 an126f AN126-21 AN126-22 LTC3758 LT3578 MMBT3908 LT1480 IHLP2525CZER1ROM 50V 20A step down regulator PA2925NL 100CE10FS	PDF