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    SI3440DV Price and Stock

    Vishay Siliconix SI3440DV-T1-GE3

    MOSFET N-CH 150V 1.2A 6TSOP
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    DigiKey SI3440DV-T1-GE3 Reel 21,000 3,000
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    SI3440DV-T1-GE3 Cut Tape 9,248 1
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    SI3440DV-T1-GE3 Digi-Reel 1
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    Vishay Siliconix SI3440DV-T1-E3

    MOSFET N-CH 150V 1.2A 6TSOP
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    DigiKey SI3440DV-T1-E3 Reel 6,000 3,000
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    SI3440DV-T1-E3 Cut Tape 5,199 1
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    SI3440DV-T1-E3 Digi-Reel 1
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    Quest Components SI3440DV-T1-E3 121
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    Vishay Intertechnologies SI3440DV-T1-E3

    N-CHANNEL 150-V (D-S) MOSFET - Tape and Reel (Alt: SI3440DV-T1-E3)
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    Avnet Americas SI3440DV-T1-E3 Reel 13 Weeks 3,000
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    SI3440DV-T1-E3 Reel 3,000
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    Verical SI3440DV-T1-E3 21,000 3,000
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    SI3440DV-T1-E3 6,000 3,000
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    SI3440DV-T1-E3 3,000 3,000
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    SI3440DV-T1-E3 1,917 18
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    Arrow Electronics SI3440DV-T1-E3 21,000 13 Weeks 3,000
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    SI3440DV-T1-E3 3,000 13 Weeks 3,000
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    SI3440DV-T1-E3 Cut Strips 1,917 13 Weeks 1
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    Newark SI3440DV-T1-E3 Cut Tape 8,352 5
    • 1 $1.48
    • 10 $1.24
    • 100 $0.993
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    SI3440DV-T1-E3 Reel 3,000
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    SI3440DV-T1-E3 Reel 3,000
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    Bristol Electronics SI3440DV-T1-E3 4,730
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    Quest Components SI3440DV-T1-E3 3,784
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    SI3440DV-T1-E3 189
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    SI3440DV-T1-E3 64
    • 1 $1.75
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    TTI SI3440DV-T1-E3 Reel 15,000 3,000
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    SI3440DV-T1-E3 Cut Tape 10
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    Avnet Asia SI3440DV-T1-E3 15 Weeks 3,000
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    Chip1Stop SI3440DV-T1-E3 21,000
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    SI3440DV-T1-E3 3,000
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    SI3440DV-T1-E3 1,917
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    EBV Elektronik SI3440DV-T1-E3 10 Weeks 3,000
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    New Advantage Corporation SI3440DV-T1-E3 9,000 1
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    Vishay Intertechnologies SI3440DV-T1-GE3

    N-CHANNEL 150-V (D-S) MOSFET - Tape and Reel (Alt: SI3440DV-T1-GE3)
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    Avnet Americas SI3440DV-T1-GE3 Reel 13 Weeks 3,000
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    SI3440DV-T1-GE3 Reel 3,000
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    Verical SI3440DV-T1-GE3 9,000 3,000
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    SI3440DV-T1-GE3 3,000 3,000
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    SI3440DV-T1-GE3 1,161 40
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    Arrow Electronics SI3440DV-T1-GE3 9,000 13 Weeks 3,000
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    Newark SI3440DV-T1-GE3 Reel 3,000
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    SI3440DV-T1-GE3 Cut Tape 3,000
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    TTI SI3440DV-T1-GE3 Reel 30,000 3,000
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    TME SI3440DV-T1-GE3 1
    • 1 $0.773
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    Chip1Stop SI3440DV-T1-GE3 9,000
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    SI3440DV-T1-GE3 Cut Tape 1,163
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    EBV Elektronik SI3440DV-T1-GE3 10 Weeks 3,000
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    Vishay Intertechnologies SI3440DV-T1-E3.

    Mosfet, N Channel, 150V, 1.2A, Tsop-6, Full Reel; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:1.2A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:1.14W Rohs Compliant: No |Vishay SI3440DV-T1-E3.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SI3440DV-T1-E3. Reel 3,000
    • 1 $0.755
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    Find more SI3440DV price and stock on Findchips.com

    SI3440DV Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI3440DV Vishay Siliconix MOSFETs Original PDF
    Si3440DV SPICE Device Model Vishay N-Channel 150-V (D-S) MOSFET Original PDF
    SI3440DV-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 1.2A 6-TSOP Original PDF
    SI3440DV-T1-E3 Vishay Telefunken Original PDF
    SI3440DV-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 1.2A 6-TSOP Original PDF

    SI3440DV Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    150V Single N-Channel Power MOSFET TSOP-6

    Abstract: si3440
    Text: Si3440DV Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 RDS(on) (Ω) ID (A) 0.375 at VGS = 10 V 1.5 0.400 at VGS = 6.0 V 1.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized for Fast Switching In Small


    Original     		PDF Si3440DV 2002/95/EC Si3440DV-T1-E3 Si3440DV-T1-GE3 11-Mar-11 150V Single N-Channel Power MOSFET TSOP-6 si3440

    Si3440DV-T1-GE3

    Abstract: Si3440DV Si3440DV-T1-E3
    Text: Si3440DV Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 RDS(on) (Ω) ID (A) 0.375 at VGS = 10 V 1.5 0.400 at VGS = 6.0 V 1.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized for Fast Switching In Small


    Original     		PDF Si3440DV 2002/95/EC Si3440DV-T1-E3 Si3440DV-T1-GE3 18-Jul-08

    Si3440DV-T1-GE3

    Abstract: No abstract text available
    Text: Si3440DV Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 RDS(on) (Ω) ID (A) 0.375 at VGS = 10 V 1.5 0.400 at VGS = 6.0 V 1.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized for Fast Switching In Small


    Original     		PDF Si3440DV 2002/95/EC Si3440DV-T1-E3 Si3440DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si3440DV Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 RDS(on) (Ω) ID (A) 0.375 at VGS = 10 V 1.5 0.400 at VGS = 6.0 V 1.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized for Fast Switching In Small


    Original     		PDF Si3440DV 2002/95/EC Si3440DV-T1-E3 Si3440DV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    72555

    Abstract: Si3440DV
    Text: SPICE Device Model Si3440DV Vishay Siliconix N-Channel 150-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si3440DV 0-to-10V 30-Sep-03 72555

    72555

    Abstract: Si3440DV
    Text: SPICE Device Model Si3440DV Vishay Siliconix N-Channel 150-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si3440DV 18-Jul-08 72555

    si3440

    Abstract: No abstract text available
    Text: Si3440DV Vishay Siliconix New Product N-Channel 150-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D PWM Optimized for Fast Switching In Small Footprint D 100% Rg Tested PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) ID (A) 0.375 @ VGS = 10 V 1.5 0.400 @ VGS = 6.0 V


    Original     		PDF Si3440DV Si3440DV-T1 S-31919--Rev. 15-Sep-03 si3440

    mosfet 4800

    Abstract: si3440 4800 mosfet AN609 Si3440DV
    Text: Si3440DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si3440DV AN609 28-Mar-07 mosfet 4800 si3440 4800 mosfet

    SI3440DV-T1-E3

    Abstract: Si3440DV Si3440DV-T1
    Text: Si3440DV Vishay Siliconix New Product N-Channel 150-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D PWM Optimized for Fast Switching In Small Footprint D 100% Rg Tested PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) ID (A) 0.375 @ VGS = 10 V 1.5 0.400 @ VGS = 6.0 V


    Original     		PDF Si3440DV Si3440DV-T1--E3 08-Apr-05 SI3440DV-T1-E3 Si3440DV-T1

    Si3440DV-T1-E3

    Abstract: 821-14
    Text: Si3440DV Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 RDS(on) (Ω) ID (A) 0.375 at VGS = 10 V 1.5 0.400 at VGS = 6.0 V 1.4 • TrenchFET Power MOSFET • PWM Optimized for Fast Switching In Small Footprint • 100 % Rg Tested


    Original     		PDF Si3440DV Si3440DV-T1-E3 18-Jul-08 821-14

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si3440DV www.vishay.com Vishay Siliconix N-Channel 150 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si3440DV 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si3440DV Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 RDS(on) (Ω) ID (A) 0.375 at VGS = 10 V 1.5 0.400 at VGS = 6.0 V 1.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized for Fast Switching In Small


    Original     		PDF Si3440DV 2002/95/EC Si3440DV-T1-E3 Si3440DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    si3440

    Abstract: Si3440DV Si3440DV-T1 SI3440DV-T1-E3 TSOP-6 .54
    Text: Si3440DV Vishay Siliconix New Product N-Channel 150-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D PWM Optimized for Fast Switching In Small Footprint D 100% Rg Tested PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) ID (A) 0.375 @ VGS = 10 V 1.5 0.400 @ VGS = 6.0 V


    Original     		PDF Si3440DV Si3440DV-T1--E3 S-32412--Rev. 24-Nov-03 si3440 Si3440DV-T1 SI3440DV-T1-E3 TSOP-6 .54

    Untitled

    Abstract: No abstract text available
    Text: Si3440DV Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 RDS(on) (Ω) ID (A) 0.375 at VGS = 10 V 1.5 0.400 at VGS = 6.0 V 1.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized for Fast Switching In Small


    Original     		PDF Si3440DV 2002/96/EC Si3440DV-T1-E3 Si3440DV-T1-GE3 18-Jul-08

    CTX03-14856

    Abstract: PA1260 CRCW0805330RFK PA1269 HC2LP-4R7 ERJ6ENF1000V CRCW0805330RF PA-126 si3440 CTX031
    Text: SC4812 Current Mode PWM Controller with Integrated Start-up Circuit and Op Amp POWER MANAGEMENT Description Features ‹ ‹ ‹ ‹ ‹ ‹ ‹ The circuitry of the SC4812 includes an integrated high voltage start-up circuit suitable for telecom/industrial ‹ voltage applications. It is disabled during regular opera- ‹


    Original     		PDF SC4812 SC4812 IPC-SM-782A, CTX03-14856 PA1260 CRCW0805330RFK PA1269 HC2LP-4R7 ERJ6ENF1000V CRCW0805330RF PA-126 si3440 CTX031

    PA0806.004NL

    Abstract: 18V75V BSC057N08NS3 PA2008 LTC3766GN
    Text: LTC3766 High Efficiency, Secondary-Side Synchronous Forward Controller Description Features Direct Flux Limit Guarantees No Saturation Fast and Accurate Average Current Limit n Clean Start-Up Into Pre-Biased Output n Secondary-Side Control for Fast Transient Response


    Original     		PDF LTC3766 LTC3765 LTC3765, 3766fa com/LTC3766 PA0806.004NL 18V75V BSC057N08NS3 PA2008 LTC3766GN

    "power sourcing equipment"

    Abstract: No abstract text available
    Text: LTC4267 Power over Ethernet IEEE 802.3af PD Interface with Integrated Switching Regulator DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ Complete Power Interface Port for IEEE 802 .3af Powered Device PD Onboard 100V, 400mA UVLO Switch Precision Dual Level Inrush Current Limit


    Original     		PDF LTC4267 SBM1040 MMTBA42 MMSD4148 BAS516 150pF "power sourcing equipment"

    5a6 zener diode

    Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
    Text: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical


    Original     		PDF Si4418DY 130mOhm@ Si4420BDY Si6928DQ 35mOhm@ Si6954ADQ 53mOhm@ SiP2800 SUM47N10-24L 24mOhm@ 5a6 zener diode dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    BS250KL-TR1-E3

    Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
    Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8


    Original     		PDF SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original     		PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    3.3V TVS

    Abstract: TVS SMAJ marking "power sourcing equipment"
    Text: LTC4267-1 Power over Ethernet IEEE 802.3af PD Interface with Integrated Switching Regulator Description Features Complete Power Interface Port for IEEE 802 .3af Powered Device PD n Onboard 100V, UVLO Switch n Precision Dual Level Inrush Current Limit n Integrated Current Mode Switching Regulator


    Original     		PDF LTC4267-1 42671fa com/4267-1 3.3V TVS TVS SMAJ marking "power sourcing equipment"

    HFJ11-RP28E-L12

    Abstract: LT4267 capacitor 4.7uF 37V PA1721 LTC4267 LTC4267CDHC Signal Path Designer lt426 "Power over Ethernet" "power sourcing equipment"
    Text: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 917 POE TO 3.3V@2.6A ISOLATED LTC4267CDHC DESCRIPTION Demonstration circuit 917 is a PoE to 3.3V@2.6A Isolated Converter featuring the LTC4267CDHC. The board provides a complete IEEE 802.3af power device PD interface and isolated 3.3V


    Original     		PDF LTC4267CDHC LTC4267CDHC. LTC4267 Si3440DV PS2911 PA1721 250VAC 047uF FMMT3904 HFJ11-RP28E-L12 LT4267 capacitor 4.7uF 37V PA1721 LTC4267CDHC Signal Path Designer lt426 "Power over Ethernet" "power sourcing equipment"