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    SI3434DV Price and Stock

    Vishay Siliconix SI3434DV-T1-E3

    MOSFET N-CH 30V 4.6A 6TSOP
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    DigiKey SI3434DV-T1-E3 Digi-Reel 1
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    Vishay Siliconix SI3434DV-T1-GE3

    MOSFET N-CH 30V 4.6A 6TSOP
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    Vishay Intertechnologies SI3434DV-T1-E3

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    Bristol Electronics SI3434DV-T1-E3 61
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    Quest Components SI3434DV-T1-E3 48
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    Vishay Intertechnologies SI3434DV-T1

    N-CHANNEL 30 V 4.6A (TA) 1.14W (TA) SURFACE MOUNT 6-TSOP
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    Quest Components SI3434DV-T1 2,256
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    Vishay Siliconix SI3434DV

    MOSFET Transistor, N-Channel, TSOP
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    Quest Components SI3434DV 301
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    Find more SI3434DV price and stock on Findchips.com

    SI3434DV Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    Si3434DV Vishay Intertechnology N-Channel 30-V (D-S) MOSFET Original PDF
    SI3434DV Vishay Siliconix N-Channel 30-V (D-S) MOSFET Original PDF
    Si3434DV SPICE Device Model Vishay N-Channel 30-V (D-S) MOSFET Original PDF
    SI3434DV-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 4.6A 6-TSOP Original PDF
    SI3434DV-T1-E3 Vishay Siliconix MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:4.6A; On-Resistance, Rds(on):0.034ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:6-TSOP; Leaded Process Compatible:Yes Original PDF
    SI3434DV-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 4.6A 6-TSOP Original PDF

    SI3434DV Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si3434DV

    Abstract: Si3434DV-T1-E3 SI3434DV-T1-GE3
    Text: Si3434DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.034 at VGS = 4.5 V 6.1 0.050 at VGS = 2.5 V 5.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 2.5 V Rating for 30 V N-Channel


    Original     		PDF Si3434DV 2002/95/EC Si3434DV-T1-E3 Si3434DV-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si3434DV New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D 2.5-V Rating for 30-V N-Channel D Low rDS(on) for Footprint Area PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.034 @ VGS = 4.5 V 6.1 APPLICATIONS 0.050 @ VGS = 2.5 V


    Original     		PDF Si3434DV 18-Jul-08

    Si3434DV

    Abstract: No abstract text available
    Text: Si3434DV New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D 2.5-V Rating for 30-V N-Channel D Low rDS(on) for Footprint Area PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.034 @ VGS = 4.5 V 6.1 APPLICATIONS 0.050 @ VGS = 2.5 V


    Original     		PDF Si3434DV S-03617--Rev. 17-Apr-01

    Si3434DV

    Abstract: si3434 71652 61A18
    Text: SPICE Device Model Si3434DV Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si3434DV S-50383Rev. 21-Mar-05 si3434 71652 61A18

    Untitled

    Abstract: No abstract text available
    Text: Si3434DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.034 at VGS = 4.5 V 6.1 0.050 at VGS = 2.5 V 5.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 2.5 V Rating for 30 V N-Channel


    Original     		PDF Si3434DV 2002/95/EC Si3434DV-T1-E3 Si3434DV-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si3434DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.034 at VGS = 4.5 V 6.1 0.050 at VGS = 2.5 V 5.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 2.5 V Rating for 30 V N-Channel


    Original     		PDF Si3434DV 2002/95/EC Si3434DV-T1-E3 Si3434DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    6456

    Abstract: AN609 Si3434DV
    Text: Si3434DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si3434DV AN609 19-Jan-06 6456

    Si3434DV

    Abstract: No abstract text available
    Text: SPICE Device Model Si3434DV Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si3434DV 18-Jul-08

    Si3434DV

    Abstract: No abstract text available
    Text: SPICE Device Model Si3434DV Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si3434DV 12-Jun-01

    Untitled

    Abstract: No abstract text available
    Text: Si3434DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.034 at VGS = 4.5 V 6.1 0.050 at VGS = 2.5 V 5.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 2.5 V Rating for 30 V N-Channel


    Original     		PDF Si3434DV 2002/95/EC Si3434DV-T1-E3 Si3434DV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si3434DV

    Abstract: No abstract text available
    Text: Si3434DV New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D 2.5-V Rating for 30-V N-Channel D Low rDS(on) for Footprint Area PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.034 @ VGS = 4.5 V 6.1 APPLICATIONS 0.050 @ VGS = 2.5 V


    Original     		PDF Si3434DV 08-Apr-05

    Vishay DaTE CODE tsop-6

    Abstract: si3410
    Text: Si3410DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.0195 at VGS = 10 V 8 0.023 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si3410DV 2002/95/EC Si3410DV-T1-E3 Si3410DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Vishay DaTE CODE tsop-6 si3410

    95xxx

    Abstract: si3434 si3495
    Text: Si3495DV Vishay Siliconix P-Channel 20-V D-S , 1.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.024 at VGS = - 4.5 V -7 0.030 at VGS = - 2.5 V - 6.2 0.038 at VGS = - 1.8 V - 5.2 0.048 at VGS = - 1.5 V - 5.0 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si3495DV 2002/95/EC Si3495DV-T1-E3 Si3495DV-T1-GE3 95xxx 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 95xxx si3434 si3495

    Untitled

    Abstract: No abstract text available
    Text: Si3424CDV Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a, b 0.026 at VGS = 10 V 8 0.032 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si3424CDV 2002/95/EC Si3424CDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si3456DDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)d 0.040 at VGS = 10 V 6.3 0.050 at VGS = 4.5 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si3456DDV 2002/95/EC Si3456DDV-T1-E3 Si3456DDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    dg468dv

    Abstract: No abstract text available
    Text: DG467, DG468 Vishay Siliconix Low Power, High Voltage SPST Analog Switches DESCRIPTION FEATURES The DG467 and DG468 are dual supply single-pole/singlethrow SPST switches. On resistance is 10  maximum and flatness is 2  max over the specified analog signal range.


    Original     		PDF DG467, DG468 DG467 DG468 DG467/468 2011/65/EU 2002/95/EC. 2002/95/EC dg468dv

    Untitled

    Abstract: No abstract text available
    Text: DG447, DG448 Vishay Siliconix Low Power, High Voltage SPST Analog Switches DESCRIPTION FEATURES The DG447, DG448 are dual supply single-pole/single-throw SPST switches. On resistance is 25 W maximum and flatness is 2.2 W max over the specified analog signal range.


    Original     		PDF DG447, DG448 DG448 DG477, DG477 2011/65/EU 2002/95/EC.

    Untitled

    Abstract: No abstract text available
    Text: Si3879DV Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY 0.070 at VGS = - 5.0 V ID (A)a - 5.0 0.105 at VGS = - 2.5 V - 4.2 VDS (V) - 20 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT Plus Schottky Power MOSFET


    Original     		PDF Si3879DV 2002/95/EC Si3879DV-T1-E3 Si3879DV-T1l 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si3585CDV Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () Max. • TrenchFET Power MOSFETs • 100 % Rg Tested • Material categorization: For definitions of compliance please see


    Original     		PDF Si3585CDV 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    TSOP 173B

    Abstract: No abstract text available
    Text: Si3493BDV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0275 at VGS = - 4.5 V - 8.0a 0.034 at VGS = - 2.5 V - 7.9 0.045 at VGS = - 1.8 V - 2.2 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si3493BDV 2002/95/EC Si3493BDV-T1-E3 Si3493BDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 TSOP 173B

    tsop6 package

    Abstract: No abstract text available
    Text: New Product Si3483CDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.034 at VGS = - 10 V - 8a 0.053 at VGS = - 4.5 V -7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si3483CDV 2002/95/EC Si3483CDV-T1-E3 Si3483CDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 tsop6 package

    Untitled

    Abstract: No abstract text available
    Text: Si3853DV Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.200 at VGS = - 4.5 V ± 1.8 0.340 at VGS = - 2.5 V ± 1.3 • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT Plus


    Original     		PDF Si3853DV 2002/95/EC Si3853DV-T1-E3 Si3853DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si3424DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.028 at VGS = 10 V 6.7 0.038 at VGS = 4.5 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si3424DV 2002/95/EC Si3424DV-T1-E3 Si3424DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si3909DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.200 at VGS = - 4.5 V ± 1.8 - 20 0.235 at VGS = - 3.6 V ± 1.6 0.340 at VGS = - 2.5 V ± 1.3 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si3909DV 2002/95/EC Si3909DV-T1-E3 Si3909DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12