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    Vishay Siliconix SI7302DN-T1-E3

    MOSFET N-CH 220V 8.4A PPAK1212-8
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    DigiKey SI7302DN-T1-E3 Reel
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    Vishay Siliconix SI7302DN-T1-GE3

    MOSFET N-CH 220V 8.4A PPAK1212-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI7302DN-T1-GE3 Reel 3,000
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    SI7302DN Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si7302DN-T1-E3 Vishay Transistor Mosfet N-CH 220V 2.3A 8POWERPAK Original PDF
    SI7302DN-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 220V 8.4A 1212-8 Original PDF
    SI7302DN-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 220V 8.4A 1212-8 Original PDF

    SI7302DN Datasheets Context Search

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    Si7302DN

    Abstract: No abstract text available
    Text: SPICE Device Model Si7302DN Vishay Siliconix N-Channel 220-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si7302DN 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si7302DN New Product Vishay Siliconix N-Channel 220-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.320 @ VGS = 10 V 8.4 0.340 @ VGS = 6 V 8.2 VDS (V) 220 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) APPLICATIONS 9 1 nC 9.1 Product Is


    Original     		PDF Si7302DN Si7302DN-T1--E3 S-50280--Rev. 21-Feb-05

    Si7302DN

    Abstract: S-51128-Rev SI7302DN-T1-E3
    Text: Si7302DN New Product Vishay Siliconix N-Channel 220-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.320 @ VGS = 10 V 8.4 0.340 @ VGS = 6 V 8.2 VDS (V) 220 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) APPLICATIONS 9 1 nC 9.1 RoHS COMPLIANT


    Original     		PDF Si7302DN Si7302DN-T1--E3 S-51128--Rev. 13-Jun-05 S-51128-Rev SI7302DN-T1-E3

    Untitled

    Abstract: No abstract text available
    Text: Si7302DN Vishay Siliconix New Product N-Channel 220-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.320 at VGS = 10 V 8.4 0.340 at VGS = 6 V 8.2 VDS (V) 220 Qg (Typ) • TrenchFET Power MOSFET • 100 % Rg Tested RoHS 9.1 nC APPLICATIONS COMPLIANT


    Original     		PDF Si7302DN Si7302DN-T1-E3 18-Jul-08

    Si7302DN

    Abstract: No abstract text available
    Text: Si7302DN New Product Vishay Siliconix N-Channel 220-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.320 @ VGS = 10 V 8.4 0.340 @ VGS = 6 V 8.2 VDS (V) 220 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) APPLICATIONS 9 1 nC 9.1 RoHS COMPLIANT


    Original     		PDF Si7302DN Si7302DN-T1--E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si7302DN Vishay Siliconix N-Channel 220-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.320 at VGS = 10 V 8.4 0.340 at VGS = 6 V 8.2 VDS (V) 220 Qg (Typ.) 9.1 nC APPLICATIONS PowerPAK 1212-8 • Primary Side Switching S 3.30 mm • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si7302DN Si7302DN-T1-E3 Si7302DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si7302DN

    Abstract: Si7302DN-T1-E3
    Text: Si7302DN Vishay Siliconix N-Channel 220-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.320 at VGS = 10 V 8.4 0.340 at VGS = 6 V 8.2 VDS (V) 220 Qg (Typ.) 9.1 nC APPLICATIONS PowerPAK 1212-8 • Primary Side Switching S 3.30 mm • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si7302DN Si7302DN-T1-E3 Si7302DN-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si7302DN Vishay Siliconix N-Channel 220-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.320 at VGS = 10 V 8.4 0.340 at VGS = 6 V 8.2 VDS (V) 220 Qg (Typ.) 9.1 nC APPLICATIONS PowerPAK 1212-8 • Primary Side Switching S 3.30 mm • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si7302DN Si7302DN-T1-E3 Si7302DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si7302DN Vishay Siliconix N-Channel 220-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.320 at VGS = 10 V 8.4 0.340 at VGS = 6 V 8.2 VDS (V) 220 Qg (Typ.) 9.1 nC APPLICATIONS PowerPAK 1212-8 • Primary Side Switching S 3.30 mm • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si7302DN Si7302DN-T1-E3 Si7302DN-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si7302DN Vishay Siliconix New Product N-Channel 220-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.320 at VGS = 10 V 8.4 0.340 at VGS = 6 V 8.2 VDS (V) 220 Qg (Typ) • TrenchFET Power MOSFET • 100 % Rg Tested RoHS 9.1 nC APPLICATIONS COMPLIANT


    Original     		PDF Si7302DN Si7302DN-T1-E3 08-Apr-05

    q406 transistor

    Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
    Text: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		PDF SiP41109 SiP41110 SiP41111 75/2A q406 transistor SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS

    LTC3758

    Abstract: LT3578 MMBT3908 LT1480 IHLP2525CZER1ROM 50V 20A step down regulator PA2925NL AN126 100CE10FS AN125
    Text: Application Note 126 October 2010 2-Wire Virtual Remote Sensing for Voltage Regulators Clairvoyance Marries Remote Sensing Jim Williams, Jesus Rosales, Kurk Mathews, Tom Hack Introduction Wires and connectors have resistance. This simple, unavoidable truth dictates that a power source’s remote load


    Original     		PDF AN125 IntLT4180 AN126 an126f AN126-21 AN126-22 LTC3758 LT3578 MMBT3908 LT1480 IHLP2525CZER1ROM 50V 20A step down regulator PA2925NL 100CE10FS