1N5429
Abstract: No abstract text available
Text: 1N5429 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleDO-7 Mounting StyleT DescriptionMax.Rad.Level-300T NVT;Post Rad.BV-200V;VF-1.5V;IR-50nA;Ct-6.0pf.
|
Original
|
PDF
|
1N5429
Level-300T
BV-200V
IR-50nA
|
10W ZENER DIODES
Abstract: 10W zener diode zener diode 30c 10 watt zener diode NTE5182A Zener Diode NTE5198A 12 volt zener diode 10 watts 3.9V ZENER DIODE zener 10w NTE5178A
Text: NTE5174A thru NTE5232A Zener Diode, 10 Watt ±5% Tolerance Features: D Zener Voltage 3.9V to 200V D DO4 Stud Mount Package Absolute Maximum Ratings: Forward Voltage IF = 2A , VF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5V
|
Original
|
PDF
|
NTE5174A
NTE5232A
10W ZENER DIODES
10W zener diode
zener diode 30c
10 watt zener diode
NTE5182A Zener Diode
NTE5198A
12 volt zener diode 10 watts
3.9V ZENER DIODE
zener 10w
NTE5178A
|
marking A04 C
Abstract: 1.5W zener diode axial zener diodes marking code 77 1N5932B 15W ZENER DIODES MARKING 182 DO-35 zener diode
Text: 1N59xxB SERIES 1.5W Zener Diode .034 0.9 DIA. .028 (0.7) 1.0 (25.4) MIN. .205 (5.2) .165 (4.2) .107 (2.7) DIA. .080 (2.0) PRIMARY CHARACTERISTICS 1.0 (25.4) MIN. VRRM 6.2~200V VF 1.5V TJ max 150°C DO-41 Dimensions in inches and (millimeters) Features Mechanical Data
|
Original
|
PDF
|
1N59xxB
DO-41
DO-41
UL94V-0
MIL-STD-202,
marking A04 C
1.5W zener diode
axial zener diodes marking code 77
1N5932B
15W ZENER DIODES
MARKING 182 DO-35 zener diode
|
HFA105NH60
Abstract: IRFP250
Text: Previous Datasheet Index Next Data Sheet PD-2.444 HFA105NH60 TM HEXFRED Ultrafast, Soft Recovery Diode LUG TERMINAL ANODE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters VR = 600V VF = 1.5V a d Qrr * = 1200nC
|
Original
|
PDF
|
HFA105NH60
1200nC
HFA105NH60
IRFP250
|
HFA105NH60R
Abstract: IRFP250
Text: Previous Datasheet Index Next Data Sheet PD-2.443 HFA105NH60R TM HEXFRED Ultrafast, Soft Recovery Diode LUG TERMINAL CATHODE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters VR = 600V VF = 1.5V a d
|
Original
|
PDF
|
HFA105NH60R
1200nC
IRFP250
HFA105NH60R
IRFP250
|
Untitled
Abstract: No abstract text available
Text: DUAL SILICON CARBIDE SCHOTTKY DIODE SML20SIC06N1M • VR max = 600V • IF(avg) = 20A • VF(typ) = 1.5V • • • • Hermetic Ceramic TO-276AA SMD0.5 Package No Reverse or Forward Recovery Dual Common Cathode Configuration High Reliability Screening Options Available
|
Original
|
PDF
|
SML20SIC06N1M
O-276AA
O-276AA)
|
Carbide Schottky Diode
Abstract: No abstract text available
Text: SILICON CARBIDE SCHOTTKY DIODE SML20SIC06M • VR max = 600V • IF(avg) = 20A • VF(typ) = 1.5V • • • • Hermetic TO220 Metal Package No Reverse Recovery No Forward Recovery High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
|
Original
|
PDF
|
SML20SIC06M
300us,
O220M
O-257AB)
Carbide Schottky Diode
|
Untitled
Abstract: No abstract text available
Text: SILICON CARBIDE SCHOTTKY DIODE SML20SIC06M • VR max = 600V • IF(avg) = 20A • VF(typ) = 1.5V • • • • Hermetic TO220 Metal Package No Reverse Recovery No Forward Recovery High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
|
Original
|
PDF
|
SML20SIC06M
300us,
O220M
O-257AB)
|
sony flyback transformer
Abstract: smps repair circuit ultrasonic transducers 48V sony flyback transformer datasheet fast recovery diode 600v 5A Ultrasonic Cleaning Transducer FCH10A15 sony flyback FAST RECOVERY DIODE 200ns 8A 40V FAST RECOVERY DIODE 200ns
Text: TABLE of CONTENTS Diode — EMI and Efficiency————–—————————– Rectification Noise—————————————————— 3 series of SBD———————————————————— SBD and Thermal Runaway——————————————
|
Original
|
PDF
|
|
pn junction diode structure
Abstract: "Power Diode" smd 3a LM317 spice MOSFET HALF BRIDGE Power Supply AC TO DC5V 50 IGBT 60A spice model AC DC 60v 10amp 31DF2 S0D-123 ferrite transformer power for power supply atx what is THERMAL RUNAWAY IN RECTIFIER MOSFET
Text: CONTENTS Diode is the basics power semiconductor 1 Structure, symbol, and basic nature of diode １ Rectifier diode for general use, and fast recovery diode 2 Experiments to ascertain basic nature of diode — Forward and Reverse characteristics 2 Forward power loss and reverse power loss
|
Original
|
PDF
|
|
FEBFSL206MRN_H428V1
Abstract: SAMXON KM Series samxon capacitor jackcon lhk E156256 jackcon LHK series TRN-0299 58Vac samxon capacitor 4.7 400V FEBFSL206MRN
Text: User Guide for FEBFSL206MRN_H428v1 Evaluation Board Integrated Controller FSL206MRN 5W Auxiliary Power Supply Featured Fairchild Product: FSL206MRN Direct questions or comments about this evaluation board to: “Worldwide Direct Support” Fairchild Semiconductor.com
|
Original
|
PDF
|
FEBFSL206MRN
H428v1
FSL206MRN
FSL206MRN
H428v1
FEBFSL206MRN_H428V1
SAMXON KM Series
samxon capacitor
jackcon lhk
E156256
jackcon LHK series
TRN-0299
58Vac
samxon capacitor 4.7 400V
|
MUR840
Abstract: ultrafast recovery dual rectifier RHRP8120 RHRU100120 Hyperfast Diode 1200V RURG8060 smps design 32V MUR1520 MUR820 RURD420
Text: FO-011.2 5/12/00 12:09 PM Page 1 I N T E R S I L C O R P O R AT I O N B U I L D I N G S I L I C O N A D V A N TA G E S F O R T EC H N O LO GY U LT R A F A S T A N D H Y P E R F A S T RECTIFIERS Intersil Corporation provides the silicon advantage in a burgeoning market
|
Original
|
PDF
|
FO-011
O-218
O-204AA
O-220
Rating/10
MS012AA
O-262,
O-263
O-264X
MUR840
ultrafast recovery dual rectifier
RHRP8120
RHRU100120
Hyperfast Diode 1200V
RURG8060
smps design 32V
MUR1520
MUR820
RURD420
|
Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
|
Original
|
PDF
|
2C415
2C425
2C444
2C746
2N1131L
2N1132
2N1132CSM
2N1132DCSM
2N1208
2N1209
Diode 400V 5A
lm1083
BZY55C
transistor 2n1208
bc109 spice
IRF9024
CV7404
mnt6337j
sml1258
SML1004RGN
|
FGA70N30TD
Abstract: No abstract text available
Text: FGA70N30TD 300V, 70A PDP IGBT tm Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.
|
Original
|
PDF
|
FGA70N30TD
FGA70N30TD
|
|
|
Untitled
Abstract: No abstract text available
Text: PD-2.462 International raÊjRectifier HFA60MB60C HEXFRED Ultrafast, Soft Recovery Diode Features V r = 600V ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters VF = 1.5V (4-6) F ^ , ^ ANODE
|
OCR Scan
|
PDF
|
HFA60MB60C
500nC
70A/JJS
G021fiti4
|
Untitled
Abstract: No abstract text available
Text: International ^Rectifier PD-2.456 HFA70NH60R Ultrafast, Soft Recovery Diode HEXFRED” LUG TERMINAL CATHODE Features Vr = 600V l • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters VF = 1.5V Qrr * = 980nC T = 220A/|JS
|
OCR Scan
|
PDF
|
HFA70NH60R
980nC
37066IR
Liguria49
|
Untitled
Abstract: No abstract text available
Text: PD-2.460 International ^R ectifier HFA70NK60C Ultrafast, Soft Recovëry Diode HEXFRED" BASE COMM 3N CATHODE Features VR = 600V c5 • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters VF = 1.5V Qrr * = 520nC 2 ¡3
|
OCR Scan
|
PDF
|
HFA70NK60C
520nC
80A/ps
Liguria49
4ASS452
002na0
|
Untitled
Abstract: No abstract text available
Text: ? PD-2.461 International g« ]Rectifier HFA70NC60CSL Ultrafast, Soft Recovery Diode HEXFRED BASE COMMI3N CATHODE Features VR = 600V c • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters V f = 1.5V Qrr * = 520nC
|
OCR Scan
|
PDF
|
HFA70NC60CSL
520nC
80A/MS
617237066IR
Liguria49
4ASS455
|
Untitled
Abstract: No abstract text available
Text: International lÉlRectifier PD-2.463 HFA60MC60C Ultrafast, Soft Recovery Diode HEXFRED Features V R = 600V ISOLATEDBASE • Reduced R F I and EM I V F = 1.5V • Reduced Snubbing • Extensive Characterization of Recovery Param eters Qrr * = 500nC , t
|
OCR Scan
|
PDF
|
HFA60MC60C
500nC
Liguria49
|
Untitled
Abstract: No abstract text available
Text: PD-2.457 International üü Rectifier HFA70NH60 Ultrafast, Soft Recovery Diode HEXFRED LUG TERMINAL ANODE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters V r = 600V ? ▼ T V F = 1.5V Qrr * = 980nC
|
OCR Scan
|
PDF
|
HFA70NH60
980nC
20A/pS
Liguria49
4A5SM52
|
Untitled
Abstract: No abstract text available
Text: PD-2.459 International 1M]Rectifier HFA70NC60CSM Ultrafast, Soft Recovery Diode H EXFRED BASE COMMI3N CATHODE Features VR= 600V c> • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters V F = 1.5V 2 i l ANODE
|
OCR Scan
|
PDF
|
HFA70NC60CSM
520nC
37066IR
Liguria49
|
Untitled
Abstract: No abstract text available
Text: International {^Rectifier P D -2.444 HFA105NH60 Ultrafast, Soft Recovèry Diode HEXFRED" LUG TERMINAL ANODE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters V R = 600V ? ▼ T V F = 1.5V Qrr* = 1200nC
|
OCR Scan
|
PDF
|
HFA105NH60
1200nC
40A/ps
Liguria49
S54S2
|
Untitled
Abstract: No abstract text available
Text: International ^Rectifier PD-2.448 HFA210NJ60C Ultrafast, Soft Recovery Diode HEXFRED LUG TERMINAL ANODE 1 Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters LUG TE RMNAL ANODE 2 Vr = 600V V f = 1.5V
|
OCR Scan
|
PDF
|
HFA210NJ60C
1200nC
40A/ps
RH89BB,
Liguria49
4A55452
|
diode ed 85
Abstract: No abstract text available
Text: PD-2.458 International Hü Rectifier HFA140NJ60C HEXFRED* Ultrafast, Soft Recovery Diode i. i LUG TERMINAL ANODE 1 Features • Reduced RFi and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters LUG TERMNAL ANODE 2 V r = 600V V F = 1.5V
|
OCR Scan
|
PDF
|
HFA140NJ60C
980nC
Liguria49
diode ed 85
|
