IRF744
Abstract: application irf744 100-C IRF1010 Q-36
Text: PD-9.1000 International S Rectifier IRF744 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V dss = 450V ^DS on = 0 . 6 3 0 lD = 8.8A Description Third Generation HEXFETs from International Rectifier provide the designer
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IRF744
O-220
T0-220
O-220AB
D-6380
IRF744
application irf744
100-C
IRF1010
Q-36
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Untitled
Abstract: No abstract text available
Text: ? PD-2.461 International g« ]Rectifier HFA70NC60CSL Ultrafast, Soft Recovery Diode HEXFRED BASE COMMI3N CATHODE Features VR = 600V c • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters V f = 1.5V Qrr * = 520nC
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HFA70NC60CSL
520nC
80A/MS
617237066IR
Liguria49
4ASS455
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Untitled
Abstract: No abstract text available
Text: PD-2.445 International ¡k?r]Rectifier HFA280NJ60C Ultrafast, Soft Recovery Diode HEXFRED LUG TERM INAL A NO D E 1 Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters LUG TERMINAL ANODE 2 V r = 600V
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HFA280NJ60C
617237066IR
Liguria49
SS452
0022G25
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Untitled
Abstract: No abstract text available
Text: PD-2.446 bïtemational S Rectifier HFA140NH60R HEXFREDT Ultrafast, Soft Recovëry Diode LUG TERM INAL CATHO DE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters Vr 600V = Vf = 1.6V A i Qrr * = 1400nC
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HFA140NH60R
1400nC
200A4IS
617237066IR
Liguria49
4flS54S2
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