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    200V 4A PNP Search Results

    200V 4A PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73128RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency PNP Transistor Array Visit Renesas Electronics Corporation
    ISL73096RHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    200V 4A PNP Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor marking N1

    Abstract: S04XXXH
    Text: S04xxxH  SCR FEATURES IT RMS = 4A VDRM = 200V to 800V High surge current capability K A G DESCRIPTION The S04xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications. TO220 non-insulated


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    S04xxxH S04xxxH transistor marking N1 PDF

    scr Igt 1mA

    Abstract: S0402xH
    Text: S0402xH  SENSITIVE GATE SCR FEATURES IT RMS = 4A VDRM = 200V to 800V Low IGT < 200 µA K A G DESCRIPTION The S0402xH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications where low gate sensitivity is required.


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    S0402xH S0402xH scr Igt 1mA PDF

    RT 0100

    Abstract: TO202-1 n1 a marking
    Text: X04xxxE/F  SENSITIVE GATE SCR FEATURES IT RMS = 4A VDRM = 200V to 800V Low IGT < 200µA K K A DESCRIPTION The X04xxxE/F series of SCRs uses a high performance TOP GLASS PNPN technology. These parts are intended for general purpose applications where low gate sensitivity is required.


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    X04xxxE/F X04xxxE/F O202-1 O202-2 X04xxxE X04xxxF RT 0100 TO202-1 n1 a marking PDF

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


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    2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN PDF

    ztx795a

    Abstract: FZT755
    Text: High Voltage Transistors PNP High Voltage Transistors 140 to 200 Volts The Zetex range of 140 to 200V transistors provides optimized high performance PNP specifications in a variety of through hole and surface mount packages. Providing very efficient high voltage operation, these devices are ideally suited to motor


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    FZT955 ZTX955 FZT795A ZTX795A FZT755 ZTX555 ZTX755 FMMT555 FZT956 OT223 PDF

    200v 4A pnp

    Abstract: No abstract text available
    Text: Search Results Part number search for devices beginning "2N4239" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N4239 PNP TO39 80V 1A 30 - 10/0.1 1MHz 0.8W


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    2N4239" 2N4239 2N4239-JQR-B 2N4239X 2N4233" 2N4233 2N4233A 2N4233A-JQR-B 2N4233-JQR-B 10/10m 200v 4A pnp PDF

    transistor p86

    Abstract: transistor p86 sot-89 v5000 p86 marking
    Text: CHENMKO ENTERPRISE CO.,LTD 2SB1386PT SMALL FLAT PNP Epitaxial Transistor VOLTAGE 20 Volts CURRENT 5 Amperes APPLICATION * Power driver and Strobe Flash . FEATURE * * * * SC-62/SOT-89 Small flat package. SC-62/SOT-89 Low saturation voltage VCE(sat)=-0.35V(Typ.)(IC/IB=-4A/-0.1A)


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    2SB1386PT SC-62/SOT-89 SC-62/SOT-89) SC-62/SOT-89OR -10mA -40mA -35mA -30mA -25mA -20mA transistor p86 transistor p86 sot-89 v5000 p86 marking PDF

    2SA1170

    Abstract: 2SC2774 RL4A
    Text: SavantIC Semiconductor Product Specification 2SA1170 Silicon PNP Power Transistors DESCRIPTION •With MT-200 package ·High power dissipation ·Complement to type 2SC2774 APPLICATIONS ·Audio and general purpose applications PINNING see Fig.2 PIN DESCRIPTION


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    2SA1170 MT-200 2SC2774 MT-200) -200V; 2SA1170 2SC2774 RL4A PDF

    2SA1494

    Abstract: 2SC3858 200v 4A pnp RL4A 2SC3858 2SA1494
    Text: SavantIC Semiconductor Product Specification 2SA1494 Silicon PNP Power Transistors DESCRIPTION •With MT-200 package ·Complement to type 2SC3858 · APPLICATIONS ·Audio and general purpose PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector;connected to


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    2SA1494 MT-200 2SC3858 MT-200) 2SA1494 2SC3858 200v 4A pnp RL4A 2SC3858 2SA1494 PDF

    BZX85C12V

    Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
    Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes


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    DO-15 DO-201AD O-220AC T0202-3 STGP3NB60HD* STGP7NB60HD* STGP3NB60HD STGP7NB60HD BZX85C12V TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E PDF

    NTE56015

    Abstract: NTE56017 NTE56016 NTE56018
    Text: NTE56015 thru NTE56018 TRIAC, 25 Amp Description: The NTE56015 through NTE56018 series of TRIACs are high performance glass passivated PNPN devices in a TO220 type package designed for general purpose applications where moderate gate sensitivity is required.


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    NTE56015 NTE56018 NTE56018 NTE56015 NTE56016 NTE56017 NTE56017 NTE56016 PDF

    NTE5635

    Abstract: NTE5633 NTE5637 triac 600V 100A NTE5632 NTE5631 NTE5634 NTE5636
    Text: NTE5631 thru NTE5637 TRIAC – 10 Amp Description: The NTE5631 through NTE5637 series of TRIACs are high performance glass passivated PNPN devices in a TO220 type package designed for general purpose applications where moderate gate sensitivity is required.


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    NTE5631 NTE5637 NTE5637 NTE5631 NTE5632 NTE5633 NTE5635 NTE5633 triac 600V 100A NTE5632 NTE5634 NTE5636 PDF

    Untitled

    Abstract: No abstract text available
    Text: f i Z T SGS-THOMSON ^ 7 # K ILlCTI^OKlDCi S04XXXH SCR FEATURES • It r m s = 4A . V drm = 200V to 800V ■ High surge current capability DESCRIPTION The S04xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose


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    S04XXXH S04xxxH T0220 Q07Q114 PDF

    Untitled

    Abstract: No abstract text available
    Text: X02xxxN SENSITIVE GATE SCR FEATURES = 1-4A = 200V to 800V • Low I g t < 200 |j,A ■ It r m s ■ V d rm DESCRIPTION The X02xxxN series of SCRs uses a high performance TOP GLASS PNPN technology. These parts are intended for general purpose high volume


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    X02xxxN X02xxxN OT223 PDF

    2N1870

    Abstract: 2N187
    Text: SCRs 2N 1 87 0A -2 N 1 87 4A , J 1.25 Amp, Planar FEATU RES DESCRIPTION • Available as Either “JAN" or Standard Types • Operating D.C. Current Range: 5 to 1250mA • Pulse Currents: to 30A • Voltage Ratings: to 200V • Maximum Trigger Current: 0.2mA


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    1250mA MIL-S-19500/198, MIL-STD-701 2N1870 2N187 PDF

    Untitled

    Abstract: No abstract text available
    Text: rrz ^7# SG S-THO M SO N S04xxxH RfflDOœiHitSiriHÎOiDOS SCR FEATURES • It r m s = 4A V d r m = 200V to 800V ■ High surge current capability ■ DESCRIPTION The S04xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose


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    S04xxxH S04xxxH T0220 PDF

    140D

    Abstract: T0202-2 X0403 TQ-202 T0-202
    Text: r z 7 SG S-THO M SO N ^ IM v. m eiiim iCTCTiicg_ X04xxxE/F SENSITIVE GATE SCR FEATURES = 4A = 200V to 800V • Low Ig t < 200|xA ■ It rm s . V d rm DESCRIPTION The X04xxxE/F series of SCRs uses a high performance TOP GLASS PNPN technology. These parts are intended for general purpose


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    RiflDIBI10 X04xxxE/F T0202-1 X04xxxE T0202-2 X04xxxF 140D T0202-2 X0403 TQ-202 T0-202 PDF

    77131

    Abstract: No abstract text available
    Text: r = T SG S-THO M SO N ^ 7 # Ki0DOl@[l[LiCT[Ri Q [j®D I _ X04xxxE/F SENSITIVE GATE SCR FEATURES = 4A = 200V to 800V • Low Ig t < 200|iA ■ I t (rms ) ■ V drm DESCRIPTION The X04xxxE/F series of SCRs uses a high performance TOP GLASS PNPN technology.


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    X04xxxE/F X04xxxE/F T0202-1 X04xxxE T0202-2 X04xxxF X04xxxF 77131 PDF

    Untitled

    Abstract: No abstract text available
    Text: rZZ SG S -TH O M S O N ^7# R ILIlOÎIBOlDSS S0402xH SENSITIVE GATE SCR FEATURES • I t r m s = 4A > V drm = 200V to 800V ■ Low Iq t <200 (xA DESCRIPTION The S0402xH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose


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    S0402xH S0402xH T0220 PDF

    marking x2b

    Abstract: X2M sot223 X2N SCR X0205N X2B SCR thomson scr marking x2M
    Text: r r z ^ 7# S G S -T H O M S O N RfflDOœiHitSiriHiOiDOS X02xxxN SENSITIVE GATE SCR FEATURES = 1-4A • V drm = 200V to 800V ■ Low I g t < 200 jjA ■ It rm s DESCRIPTION The X02xxxN series of SCRs uses a high performance TOP GLASS PNPN technology. These parts are intended tor general purpose high


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    X02xxxN X02xxxN OT223 10itiA 1995SGS-THOMSON marking x2b X2M sot223 X2N SCR X0205N X2B SCR thomson scr marking x2M PDF

    T0202

    Abstract: T0202-1 T0-202-1 T0202-2 MOROCCO 0209 2JS marking JIS B 0209 general
    Text: r Z 7 SG S-THOM SO N ^ 7 # ü DO[nî ILiOra©lD EI X04xxxE/F SENSITIVE GATE SCR FEATURES = 4A = 200V to 800V • Low Ig t < 200|iA ■ It(rm s ) . V d rm DESCRIPTION The X04xxxE/F series of SCRs uses a high performance TOP GLASS PNPN technology. These parts are intended for general purpose


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    X04xxxE/F 200jiA X04xxxE/F X04xxxF 1995SGS-THOMSON T0202 T0202-1 T0-202-1 T0202-2 MOROCCO 0209 2JS marking JIS B 0209 general PDF

    philips BDV64A

    Abstract: T1P121 BDV66A PHILIPS SEMICONDUCTOR bdv65a philips 200v 4A pnp BDV65 PHILIPS SEMICONDUCTOR philips TIP147 B0646 B0648 BU807 PHILIPS SEMICONDUCTOR
    Text: N AflER P H I L I P S / D I S C R E T E E5E D • bb53T31 D O ltiE l? b Hi T-& 1 -3-*? Power Devices 39 LOW VOLTAGE, GENERAL PURPOSE DARLINGTONS in order of current rating TYPE NPN TIP110 TIP111 TIP112 BD675 BD677 BD679 BD681 BD683 PNP fC (D C )0 ) V CEO


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    TIP110 TIP111 TIP112 TIP115 TIP116 TIP117 O-220AB BD675 BD677 BD679 philips BDV64A T1P121 BDV66A PHILIPS SEMICONDUCTOR bdv65a philips 200v 4A pnp BDV65 PHILIPS SEMICONDUCTOR philips TIP147 B0646 B0648 BU807 PHILIPS SEMICONDUCTOR PDF

    philips BDV64A

    Abstract: BDX67
    Text: N AflER P H I L I P S / D I S C R E T E ESE D • bb53T31 DOltjEl? b ■ T - £ 7 -3-? Power Devices LOW VOLTAGE, GENERAL PURPOSE DARLINGTONS in order of current rating TYPE NPN PNP PACKAGE OUTLINE fC (D C )(1) V CE0 MINIMUM hpg at f(* ^ (ty p O a t V C E(s»t)


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    bb53T31 TIP110 TIP111 TIP112 TIP115 TIP116 TIP117 O-220AB BD679 BD681 philips BDV64A BDX67 PDF

    IRF9210

    Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
    Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF


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    2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1 PDF