Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2 CHANNEL N-CHANNEL MOSFET Search Results

    2 CHANNEL N-CHANNEL MOSFET Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK5R3E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.0053 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    2 CHANNEL N-CHANNEL MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si4824DY Vishay Siliconix Asymmetric N-Channel, Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V N Channel 1 N-Channel 30 N Channel 2 N-Channel rDS(on) (W) ID (A) 0.040 @ VGS = 10 V 4.7 0.065 @ VGS = 4.5 V 3.7 0.0175 @ VGS = 10 V 9 0.027 @ VGS = 4.5 V


    Original     		PDF Si4824DY Si4824DY-T1 08-Apr-05

    BTA 16 6008

    Abstract: bta 06 400 v BTA 06 600 T application note BTA 600 Si4824DY Si4824DY-T1
    Text: Si4824DY Vishay Siliconix Asymmetric N-Channel, Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V N Channel 1 N-Channel 30 N Channel 2 N-Channel rDS(on) (W) ID (A) 0.040 @ VGS = 10 V 4.7 0.065 @ VGS = 4.5 V 3.7 0.0175 @ VGS = 10 V 9 0.027 @ VGS = 4.5 V


    Original     		PDF Si4824DY Si4824DY-T1 S-31726--Rev. 18-Aug-03 BTA 16 6008 bta 06 400 v BTA 06 600 T application note BTA 600

    Si4824DY

    Abstract: Si4824DY-T1
    Text: Si4824DY Vishay Siliconix Asymmetric N-Channel, Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V N Channel 1 N-Channel 30 N Channel 2 N-Channel rDS(on) (W) ID (A) 0.040 @ VGS = 10 V 4.7 0.065 @ VGS = 4.5 V 3.7 0.0175 @ VGS = 10 V 9 0.027 @ VGS = 4.5 V


    Original     		PDF Si4824DY Si4824DY-T1 18-Jul-08

    uPA67

    Abstract: SC74A uPA672T UPA572T upa500 uPA600 UPA607T
    Text: DUAL N & P CHANNEL SMALL SIGNAL MOSFETS µPA500 & µPA600 SERIES • DUAL N CHANNEL, DUAL P CHANNEL AND A COMBINED N AND P CHANNEL • DRAIN CURRENTS LESS THAN 200mA • CAPABLE OF OPERATING FROM VOLTAGES AS LOW AS 1.5V N Type 1 5 1 2 P Type 2 4 5 3 1 N Type 4


    Original     		PDF PA500 PA600 200mA PA572T PA672T PA502T PA602T PA606T PA611TA PA573T uPA67 SC74A uPA672T UPA572T upa500 uPA600 UPA607T

    Untitled

    Abstract: No abstract text available
    Text: Si4503DY New Product Vishay Siliconix N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS V N-Channel (Channel 2) 30 P-Channel (Channel 1) –8 rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 8.8 0.027 @ VGS = 4.5 V 7.2 0.042 @ VGS = –4.5 V –4.5 0.060 @ VGS = –2.5 V


    Original     		PDF Si4503DY 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si4503DY New Product Vishay Siliconix N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS V N-Channel (Channel 2) 30 P-Channel (Channel 1) –8 rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 8.8 0.027 @ VGS = 4.5 V 7.2 0.042 @ VGS = –4.5 V –4.5 0.060 @ VGS = –2.5 V


    Original     		PDF Si4503DY S-20894--Rev. 17-Jun-02

    Si4503DY

    Abstract: Si4503
    Text: Si4503DY New Product Vishay Siliconix N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS V N-Channel (Channel 2) 30 P-Channel (Channel 1) –8 rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 8.8 0.027 @ VGS = 4.5 V 7.2 0.042 @ VGS = –4.5 V –4.5 0.060 @ VGS = –2.5 V


    Original     		PDF Si4503DY 18-Jul-08 Si4503

    Untitled

    Abstract: No abstract text available
    Text: Si4503DY New Product Vishay Siliconix N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS V N-Channel (Channel 2) 30 P-Channel (Channel 1) –8 rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 8.8 0.027 @ VGS = 4.5 V 7.2 0.042 @ VGS = –4.5 V –4.5 0.060 @ VGS = –2.5 V


    Original     		PDF Si4503DY S-05482--Rev. 21-Jan-02

    Si4310BDY

    Abstract: No abstract text available
    Text: Si4310BDY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY FEATURES VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.011 @ VGS = 10 V 10 0.016 @ VGS = 4.5 V 8.2 0.0085 @ VGS = 10 V 14


    Original     		PDF Si4310BDY SO-14 08-Apr-05

    Si4814DY

    Abstract: No abstract text available
    Text: Si4814DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.021 @ VGS = 10 V 7.0 0.0325 @ VGS = 4.5 V 5.6 0.020 @ VGS = 10 V 7.4 0.0265 @ VGS = 4.5 V


    Original     		PDF Si4814DY S-03951--Rev. 26-May-03

    Si4376DY

    Abstract: Si4376DY-T1 Si4830DY
    Text: Si4376DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.020 @ VGS = 10 V 7.5 0.0275 @ VGS = 4.5 V 6.5 0.019 @ VGS = 10 V 7.5 0.023 @ VGS = 4.5 V


    Original     		PDF Si4376DY Si4830DY 08-Apr-05 Si4376DY-T1

    Untitled

    Abstract: No abstract text available
    Text: Si4818DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 6.3 0.030 @ VGS = 4.5 V 5.4 0.0155 @ VGS = 10 V 9.5 0.0205 @ VGS = 4.5 V


    Original     		PDF Si4818DY Si4818DY-T1 18-Jul-08

    Si4308DY

    Abstract: No abstract text available
    Text: Si4308DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.012 @ VGS = 10 V 9.6 0.018 @ VGS = 4.5 V 7.8 0.010 @ VGS = 10 V 13.5 0.0110 @ VGS = 4.5 V


    Original     		PDF Si4308DY SO-14 Si4308DY-T1 S-32078--Rev. 13-Oct-03

    Untitled

    Abstract: No abstract text available
    Text: Si4814BDY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 ID (A)a rDS(on) (W) 0.018 @ VGS = 10 V 10 0.023 @ VGS = 4.5 V 8.5 0.018 @ VGS = 10 V 10.5


    Original     		PDF Si4814BDY Si4814BDY--E3 Si4814BDY-T1--E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si4814DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.021 @ VGS = 10 V 7.0 0.0325 @ VGS = 4.5 V 5.6 0.020 @ VGS = 10 V 7.4 0.0265 @ VGS = 4.5 V


    Original     		PDF Si4814DY S-31421â 07-Jul-03

    Si4818DY

    Abstract: Si4818DY-T1
    Text: Si4818DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 6.3 0.030 @ VGS = 4.5 V 5.4 0.0155 @ VGS = 10 V 9.5 0.0205 @ VGS = 4.5 V


    Original     		PDF Si4818DY Si4818DY-T1 S-31062--Rev. 26-May-03

    Untitled

    Abstract: No abstract text available
    Text: Si4974DY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.019 @ VGS = 10 V 8.0 0.026 @ VGS = 4.5 V 6.9 0.035 @ VGS = 10 V 6.0 0.048 @ VGS = 4.5 V


    Original     		PDF Si4974DY Si4974DY-T1--E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si4376DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.020 @ VGS = 10 V 7.5 0.0275 @ VGS = 4.5 V 6.5 0.019 @ VGS = 10 V 7.5 0.023 @ VGS = 4.5 V


    Original     		PDF Si4376DY Si4830DY Si4376DY-T1 S-31726--Rev. 18-Aug-03

    CI 3060 elsys

    Abstract: Si4310BDY
    Text: Si4310BDY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY FEATURES VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.011 @ VGS = 10 V 10 0.016 @ VGS = 4.5 V 8.2 0.0085 @ VGS = 10 V 14


    Original     		PDF Si4310BDY SO-14 18-Jul-08 CI 3060 elsys

    Si4350DY

    Abstract: Si4350DY-T1 CH248
    Text: Si4350DY Vishay Siliconix New Product Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 20 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.012 @ VGS = 10 V 9.6 0.0175 @ VGS = 4.5 V 7.8 0.0075 @ VGS = 10 V 15 0.010 @ VGS = 4.5 V


    Original     		PDF Si4350DY SO-14 Si4350DY-T1 S-32514--Rev. 08-Dec-03 CH248

    z418.2dpf.s20v

    Abstract: S/sot-23 MARKING CODE 70.2
    Text: Central 2 N 7 00 2 Sem iconductor Corp. N-CHANNEL ENHANCEMENT-MODE MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is a N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications.


    OCR Scan     		PDF OT-23 2N7002 500mA 500mA, 200mA z418.2dpf.s20v S/sot-23 MARKING CODE 70.2

    NDS9942

    Abstract: National Semiconductor Discrete catalog SOIC-8 NDS9952 NDS9943 NDS9958 P channel SOIC8
    Text: bôE D • bS0113G QG3cll4Tl4 T45 M N S C S NATL SEMICOND DISCRETE Complemetary N-P Channel 2 Max NDS9942 0.125 0.25 3 2 N Channel 0.2 0.35 -2.5 NDS9943* 0.125 0.25 3 2 N Channel 0.16 0.3 -2.8 0.1 0.15 3 2 N Channel 0.25 0.4 -2.3 0.1 0.15 3.5 0.11 0.19 -3


    OCR Scan     		PDF bSD1130 NDS9942 NDS9943* NDS9952 NDS9958* National Semiconductor Discrete catalog SOIC-8 NDS9943 NDS9958 P channel SOIC8

    Mosfet Array 15 pin

    Abstract: V2557 LH1162AAP mosfet array
    Text: A T & T MELEC I C 2SE D • OOSQOSb Daasas? Q ■ QUAD HIGH-VOLTAGE N-CHANNEL MOSFET ARRAY_ LH1162AAP ADVANCE T -Y 3 -2 5 Monolithic N-Channel Enhancement-Mode Description The LH1162AAP Quad High-Voltage N-Channel M O SFET Array contains four independent N-Channel DM OS drivers


    OCR Scan     		PDF LH1162AAP T-Y3-25 LH1162AAP a0S002h Mosfet Array 15 pin V2557 mosfet array

    lm358 current sense

    Abstract: lm358 16pin diagram LM324 noise Enhancement Mode MOSFET Array pin configuration of LM358 disadvantages of mosfet
    Text: P W R -N C H 2 0 1 -T-39-»-» 2-Channel MOSFET Array 400 V - 675 mA per channel POWER in t e g r a l s a a a Product Highlights 2 open-drain N-channel MOSFETs per package PWR-NCH201


    OCR Scan     		PDF PWR-NCH201 OTO70° PWR-NCH201BNC1 16-PIN PWR-NCH201BNC2 PWR-NCH201BNC3 lm358 current sense lm358 16pin diagram LM324 noise Enhancement Mode MOSFET Array pin configuration of LM358 disadvantages of mosfet