Si4308DY
Abstract: 71941
Text: Si4308DY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY FEATURES VDS (V) Channel-1 30 Channel-2 rDS(on) (W) ID (A) 0.012 @ VGS = 10 V 9.6 0.018 @ VGS = 4.5 V 7.8 0.010 @ VGS = 10 V 13.5 0.0110 @ VGS = 4.5 V
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Si4308DY
SO-14
S-21646--Rev.
23-Sep-02
71941
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Si4308DY
Abstract: No abstract text available
Text: SPICE Device Model Si4308DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4308DY
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si4308DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.012 @ VGS = 10 V 9.6 0.018 @ VGS = 4.5 V 7.8 0.010 @ VGS = 10 V 13.5 0.0110 @ VGS = 4.5 V
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Si4308DY
SO-14
Si4308DY-T1
08-Apr-05
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Si4308DY
Abstract: on 398
Text: SPICE Device Model Si4308DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4308DY
S-71499Rev.
23-Jul-07
on 398
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Si4308DY
Abstract: No abstract text available
Text: Si4308DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.012 @ VGS = 10 V 9.6 0.018 @ VGS = 4.5 V 7.8 0.010 @ VGS = 10 V 13.5 0.0110 @ VGS = 4.5 V
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Si4308DY
SO-14
Si4308DY-T1
18-Jul-08
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a 4504
Abstract: AN609 Si4308DY 120774
Text: Si4308DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si4308DY
AN609
22-Dec-05
a 4504
120774
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Si4308DY
Abstract: No abstract text available
Text: Si4308DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.012 @ VGS = 10 V 9.6 0.018 @ VGS = 4.5 V 7.8 0.010 @ VGS = 10 V 13.5 0.0110 @ VGS = 4.5 V
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Si4308DY
SO-14
Si4308DY-T1
S-32078--Rev.
13-Oct-03
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Si4308DY
Abstract: No abstract text available
Text: SPICE Device Model Si4308DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4308DY
0-to-10V
29-Aug-02
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Untitled
Abstract: No abstract text available
Text: Si4308DY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY FEATURES VDS (V) Channel-1 30 Channel-2 rDS(on) (W) ID (A) 0.012 @ VGS = 10 V 9.6 0.018 @ VGS = 4.5 V 7.8 0.010 @ VGS = 10 V 13.5 0.0110 @ VGS = 4.5 V
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Si4308DY
SO-14
S-21442--Rev.
19-Aug-02
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Untitled
Abstract: No abstract text available
Text: Si4308DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.012 @ VGS = 10 V 9.6 0.018 @ VGS = 4.5 V 7.8 0.010 @ VGS = 10 V 13.5 0.0110 @ VGS = 4.5 V
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Si4308DY
SO-14
Si4308DY-T1
S-32078--Rev.
13-Oct-03
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71917
Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
Text: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller
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AN607
Si9137
SSOP-28
Si9910
Si9912
Si9913
10-Oct-02
71917
level logic mosfet transistor so-8
offline switchmode
si9110
siliconix an607
AN607
AN707
SI4406DY
PowerPAK SO-8
si2301ds
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q406 transistor
Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
Text: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no
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SiP41109
SiP41110
SiP41111
75/2A
q406 transistor
SI9120
equivalent Q406
q406
SUM65N20-30
Si3456BDV SPICE Device Model
sud*50n025
Si4304DY
0038 tsop
Si2325DS
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952623
Abstract: NV36M 1N112 sst ata flash disk schematic CX758 Socket AM2 Compal Electronics C19 transistor 19V 7.1A POWER SUPPLY schematic diagram isl6247
Text: A B C D E 1 1 Sapporo 300P Rev 0.3 Schematics Document 2 2 Intel Prescott uFCPGA-478 / P4 Northwood with Springdale / ICH5 / nVIDIA NV36M / HDTV chipset 2003 / 11 / 25 3 3 4 4 Compal Electronics, Inc. Title Cover Sheet Size B Date: A B C D Document Number
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uFCPGA-478
NV36M
DBQ02
ADM1032AR
400/533/667/800MHz
NV36M
DBQ01
952623
1N112
sst ata flash disk schematic
CX758
Socket AM2
Compal Electronics
C19 transistor
19V 7.1A POWER SUPPLY schematic diagram
isl6247
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sud*50n025-06p
Abstract: SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud*50n025-09p SI2301ADS SI4732CY si9110
Text: SELECTOR GUIDE V I S H A Y I N T E R T E C H N O L O G Y, I N C . Power MOSFETs for DC/DC Applications Siliconix LITTLE FOOT LITTLE FOOT® Plus Tr e n c h F E T ® WFET ChipFET® P ow e r PA K ® Application-Specific MOSFETs w w w. v i s h a y. c o m
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VSA-SG0019-0310
sud*50n025-06p
SUD70N03-04P
SI9120
sum45n25
SI9119
Si7810DN
sud*50n025-09p
SI2301ADS
SI4732CY
si9110
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