3121
Abstract: AN609 Si4376DY 101928
Text: Si4376DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
|
Original
|
PDF
|
Si4376DY
AN609
27-Apr-07
3121
101928
|
Si4376DY
Abstract: No abstract text available
Text: SPICE Device Model Si4376DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
PDF
|
Si4376DY
0-to-10V
07-Aug-02
|
Si4376DY
Abstract: No abstract text available
Text: SPICE Device Model Si4376DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
PDF
|
Si4376DY
S-52016Rev.
03-Oct-05
|
Untitled
Abstract: No abstract text available
Text: Si4376DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.020 @ VGS = 10 V 7.5 0.0275 @ VGS = 4.5 V 6.5 0.019 @ VGS = 10 V 7.5 0.023 @ VGS = 4.5 V
|
Original
|
PDF
|
Si4376DY
Si4830DY
Si4376DY-T1
S-31726--Rev.
18-Aug-03
|
Si4376DY
Abstract: Si4376DY-T1 Si4830DY
Text: Si4376DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.020 @ VGS = 10 V 7.5 0.0275 @ VGS = 4.5 V 6.5 0.019 @ VGS = 10 V 7.5 0.023 @ VGS = 4.5 V
|
Original
|
PDF
|
Si4376DY
Si4830DY
S-31726--Rev.
18-Aug-03
Si4376DY-T1
|
Si4376DY
Abstract: Si4376DY-T1 Si4830DY
Text: Si4376DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.020 at VGS = 10 V 0.0275 at VGS = 4.5 V 0.019 at VGS = 10 V 0.023 at VGS = 4.5 V Channel-1 30 Channel-2 • • • • ID (A) 7.5
|
Original
|
PDF
|
Si4376DY
Si4830DY
18-Jul-08
Si4376DY-T1
|
Si4376DY
Abstract: Si4376DY-T1 Si4830DY
Text: Si4376DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.020 @ VGS = 10 V 7.5 0.0275 @ VGS = 4.5 V 6.5 0.019 @ VGS = 10 V 7.5 0.023 @ VGS = 4.5 V
|
Original
|
PDF
|
Si4376DY
Si4830DY
08-Apr-05
Si4376DY-T1
|
Si4376DY
Abstract: No abstract text available
Text: SPICE Device Model Si4376DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
PDF
|
Si4376DY
18-Jul-08
|
Untitled
Abstract: No abstract text available
Text: Si4376DY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 rDS(on) (W) ID (A) 0.020 @ VGS = 10 V 7.5 0.0275 @ VGS = 4.5 V 6.5 0.019 @ VGS = 10 V 7.5 0.023 @ VGS = 4.5 V 6.5 FEATURES
|
Original
|
PDF
|
Si4376DY
Si4830DY
S-21164--Rev.
29-Jul-02
|
Si4376DY
Abstract: Si4830DY
Text: Si4376DY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 rDS(on) (W) ID (A) 0.020 @ VGS = 10 V 7.5 0.0275 @ VGS = 4.5 V 6.5 0.019 @ VGS = 10 V 7.5 0.023 @ VGS = 4.5 V 6.5 FEATURES
|
Original
|
PDF
|
Si4376DY
Si4830DY
S-21761--Rev.
07-Oct-02
|
Untitled
Abstract: No abstract text available
Text: Si4376DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.020 at VGS = 10 V 0.0275 at VGS = 4.5 V 0.019 at VGS = 10 V 0.023 at VGS = 4.5 V Channel-1 30 Channel-2 • • • • ID (A) 7.5
|
Original
|
PDF
|
Si4376DY
Si4830DY
Si4376DY-T1
Si4376DY-T1-E3
08-Apr-05
|
71917
Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
Text: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller
|
Original
|
PDF
|
AN607
Si9137
SSOP-28
Si9910
Si9912
Si9913
10-Oct-02
71917
level logic mosfet transistor so-8
offline switchmode
si9110
siliconix an607
AN607
AN707
SI4406DY
PowerPAK SO-8
si2301ds
|
q406 transistor
Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
Text: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no
|
Original
|
PDF
|
SiP41109
SiP41110
SiP41111
75/2A
q406 transistor
SI9120
equivalent Q406
q406
SUM65N20-30
Si3456BDV SPICE Device Model
sud*50n025
Si4304DY
0038 tsop
Si2325DS
|
sud*50n025-06p
Abstract: SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud*50n025-09p SI2301ADS SI4732CY si9110
Text: SELECTOR GUIDE V I S H A Y I N T E R T E C H N O L O G Y, I N C . Power MOSFETs for DC/DC Applications Siliconix LITTLE FOOT LITTLE FOOT® Plus Tr e n c h F E T ® WFET ChipFET® P ow e r PA K ® Application-Specific MOSFETs w w w. v i s h a y. c o m
|
Original
|
PDF
|
VSA-SG0019-0310
sud*50n025-06p
SUD70N03-04P
SI9120
sum45n25
SI9119
Si7810DN
sud*50n025-09p
SI2301ADS
SI4732CY
si9110
|
