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    SI4814BDY Price and Stock

    Vishay Siliconix SI4814BDY-T1-E3

    MOSFET 2N-CH 30V 10A/10.5A 8SOIC
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    DigiKey SI4814BDY-T1-E3 Reel
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    RS SI4814BDY-T1-E3 Bulk 2,500
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    Vishay Siliconix SI4814BDY-T1-GE3

    MOSFET 2N-CH 30V 10A/10.5A 8SOIC
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    DigiKey SI4814BDY-T1-GE3 Reel
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    Vishay Siliconix SI4814BDYE3

    DUAL N-CHANNEL 30-V (D-S) MOSFET WITH SCHOTTKY DIODE Power Field-Effect Transistor, 10.5A I(D), 30V, 0.018ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA SI4814BDYE3 950
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    SI4814BDY Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4814BDY-T1-E3 Vishay Dual N-channel 30-v (d-s) Mosfet With Schottky Diode Original PDF
    SI4814BDY-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 10A 8SOIC Original PDF
    SI4814BDY-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 10A 8SOIC Original PDF

    SI4814BDY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si4814DY

    Abstract: Si4814DY-T1-E3 IDM-40 Si4814BDY-T1-E3
    Text: 勝特力科技 886-3-5753170 百年電子 86-755-83289224 Http://www.100y.com.tw Specification Comparison Vishay Siliconix Si4814BDY vs. Si4814DY Description: Package: Pin Out: Dual N-Channel, 30-V D-S MOSFET with Schottky Diode SO-8 Identical Part Number Replacements:


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    PDF Si4814BDY Si4814DY Si4814BDY-T1-E3 Si4814DY-T1-E3 Si4814DY-T1 IDM-40

    Untitled

    Abstract: No abstract text available
    Text: Si4814BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.018 at VGS = 10 V 10 0.023 at VGS = 4.5 V 8.5 0.018 at VGS = 10 V 10.5 0.022 at VGS = 4.5 V


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    PDF Si4814BDY Si4814BDY-T1-E3 Si4814BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    475224

    Abstract: 6803 AN609 92360 75574n
    Text: Si4814BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


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    PDF Si4814BDY AN609 02-Mar-06 475224 6803 92360 75574n

    SI4814DY-T1-E3

    Abstract: 56 pF CH Si4814BDY-T1-E3 Si4814DY Si4814DY-T1
    Text: Specification Comparison Vishay Siliconix Si4814BDY vs. Si4814DY Description: Dual N-Channel, 30 V D-S MOSFET with Schottky Diode Package: SO-8 Pin Out: Identical Part Number Replacements: Si4814BDY-T1-E3 Replaces Si4814DY-T1-E3 Si4814BDY-T1 Replaces Si4814DY-T1


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    PDF Si4814BDY Si4814DY Si4814BDY-T1-E3 Si4814DY-T1-E3 Si4814BDY-T1 Si4814DY-T1 10-Nov-06 56 pF CH

    CH21212

    Abstract: No abstract text available
    Text: Si4814BDY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 ID (A)a rDS(on) (W) 0.018 @ VGS = 10 V 10 0.023 @ VGS = 4.5 V 8.5 0.018 @ VGS = 10 V 10.5


    Original
    PDF Si4814BDY S-50342--Rev. 28-Feb-05 CH21212

    si4814b

    Abstract: Si4814BDY-T1-E3 si4814bdy
    Text: Si4814BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.018 at VGS = 10 V 10 0.023 at VGS = 4.5 V 8.5 0.018 at VGS = 10 V 10.5 0.022 at VGS = 4.5 V


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    PDF Si4814BDY 18-Jul-08 si4814b Si4814BDY-T1-E3

    4535A

    Abstract: No abstract text available
    Text: SPICE Device Model Si4814BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si4814BDY 18-Jul-08 4535A

    Untitled

    Abstract: No abstract text available
    Text: Si4814BDY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 ID (A)a rDS(on) (W) 0.018 @ VGS = 10 V 10 0.023 @ VGS = 4.5 V 8.5 0.018 @ VGS = 10 V 10.5


    Original
    PDF Si4814BDY Si4814BDY--E3 Si4814BDY-T1--E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si4814BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.018 at VGS = 10 V 10 0.023 at VGS = 4.5 V 8.5 0.018 at VGS = 10 V 10.5 0.022 at VGS = 4.5 V


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    PDF Si4814BDY Si4814BDY-T1-E3 Si4814BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4814BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)a rDS(on) (Ω) Channel-1 30 Channel-2 0.018 at VGS = 10 V 10 0.023 at VGS = 4.5 V 8.5 0.018 at VGS = 10 V 10.5 0.022 at VGS = 4.5 V


    Original
    PDF Si4814BDY Si4814BDY-T1-E3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4814BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)a rDS(on) (Ω) Channel-1 30 Channel-2 0.018 at VGS = 10 V 10 0.023 at VGS = 4.5 V 8.5 0.018 at VGS = 10 V 10.5 0.022 at VGS = 4.5 V


    Original
    PDF Si4814BDY Si4814BDY-T1-E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si4814BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.018 at VGS = 10 V 10 0.023 at VGS = 4.5 V 8.5 0.018 at VGS = 10 V 10.5 0.022 at VGS = 4.5 V


    Original
    PDF Si4814BDY Si4814BDY-T1-E3 Si4814BDY-T1-GE3 11-Mar-11

    q406 transistor

    Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
    Text: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


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    PDF SiP41109 SiP41110 SiP41111 75/2A q406 transistor SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS