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    Vishay Siliconix SI4310BDY-T1-E3

    MOSFET 2N-CH 30V 7.5A 14SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4310BDY-T1-E3 Reel 2,500
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    SI4310BDY Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4310BDY-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 7.5A 14SOIC Original PDF

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    SI4310

    Abstract: Si4310BDY
    Text: Si4310BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Channel-1 30 Channel-2 ID (A) 0.011 at VGS = 10 V 10 0.016 at VGS = 4.5 V 8.2 0.0085 at VGS = 10 V 14 0.0095 at VGS = 4.5 V 13 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si4310BDY 2002/95/EC SO-14 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SI4310

    max3572

    Abstract: No abstract text available
    Text: Si4310BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Channel-1 30 Channel-2 ID (A) 0.011 at VGS = 10 V 10 0.016 at VGS = 4.5 V 8.2 0.0085 at VGS = 10 V 14 0.0095 at VGS = 4.5 V 13 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si4310BDY 2002/95/EC SO-14 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 max3572

    Si4310BDY

    Abstract: No abstract text available
    Text: Si4310BDY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY FEATURES VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.011 @ VGS = 10 V 10 0.016 @ VGS = 4.5 V 8.2 0.0085 @ VGS = 10 V 14


    Original     		PDF Si4310BDY SO-14 08-Apr-05

    Si4310BDY

    Abstract: No abstract text available
    Text: Si4310BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Channel-1 30 Channel-2 ID (A) 0.011 at VGS = 10 V 10 0.016 at VGS = 4.5 V 8.2 0.0085 at VGS = 10 V 14 0.0095 at VGS = 4.5 V 13 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si4310BDY 2002/95/EC SO-14 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si4310BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Channel-1 30 Channel-2 ID (A) 0.011 at VGS = 10 V 10 0.016 at VGS = 4.5 V 8.2 0.0085 at VGS = 10 V 14 0.0095 at VGS = 4.5 V 13 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si4310BDY 2002/95/EC SO-14 18-Jul-08

    Si4310BDY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4310BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4310BDY 18-Jul-08

    CI 3060 elsys

    Abstract: Si4310BDY
    Text: Si4310BDY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY FEATURES VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.011 @ VGS = 10 V 10 0.016 @ VGS = 4.5 V 8.2 0.0085 @ VGS = 10 V 14


    Original     		PDF Si4310BDY SO-14 18-Jul-08 CI 3060 elsys

    Si4310BDY

    Abstract: No abstract text available
    Text: Si4310BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Channel-1 30 Channel-2 ID (A) 0.011 at VGS = 10 V 10 0.016 at VGS = 4.5 V 8.2 0.0085 at VGS = 10 V 14 0.0095 at VGS = 4.5 V 13 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si4310BDY 2002/95/EC SO-14 11-Mar-11