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    NDS9942

    Abstract: National Semiconductor Discrete catalog SOIC-8 NDS9952 NDS9943 NDS9958 P channel SOIC8
    Text: bôE D • bS0113G QG3cll4Tl4 T45 M N S C S NATL SEMICOND DISCRETE Complemetary N-P Channel 2 Max NDS9942 0.125 0.25 3 2 N Channel 0.2 0.35 -2.5 NDS9943* 0.125 0.25 3 2 N Channel 0.16 0.3 -2.8 0.1 0.15 3 2 N Channel 0.25 0.4 -2.3 0.1 0.15 3.5 0.11 0.19 -3


    OCR Scan     		PDF bSD1130 NDS9942 NDS9943* NDS9952 NDS9958* National Semiconductor Discrete catalog SOIC-8 NDS9943 NDS9958 P channel SOIC8

    NPDS402

    Abstract: NPDS403 NPDS404 NPDS406
    Text: NPDS402 / NPDS403 1 NPDS404 / NPDS406 Discrete POWER & S ignal Technologies National Semiconductor" NPDS402 NPDS403 NPDS404 NPDS406 N-Channel General Purpose Dual Amplifier Sourced from Process 98. Absolute Maximum Ratings* TA = 25"C unless otherwise noted


    OCR Scan     		PDF NPDS402 NPDS403 NPDS404 NPDS406 Vos-10V bS01130 NPDS406

    NDS8936

    Abstract: No abstract text available
    Text: National Semiconductor July 1996 NDS8936 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These IM-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDS8936 NDS8936

    NDP505A

    Abstract: B23 j ZENER DIODE NDP506A zener Diode B23
    Text: rvtrih ^r 1QQ1 Semiconductor NDP505A/NDP505B, NDP506A/NDP506B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National’s proprietary, high


    OCR Scan     		PDF NDP505A/NDP505B, NDP506A/NDP506B B1-043-299-2408 hSG113D D3lifci33 NDP505A B23 j ZENER DIODE NDP506A zener Diode B23

    MMBT3906

    Abstract: model of 2n3906 2N3906 MMBT3906 spice 2n3906 2a E5 sot223 MMBT3906 SOT-23
    Text: 2N 39061 MMBT3906 I MMPQ39061 PZT3906 Discrete POW ER & Signal Technologies National Semi conduct or MMBT3906 2N3906 SOT-23 B M a rk : 2A PZT3906 MMPQ3906 SOT-223 SOIC-16 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switch­


    OCR Scan     		PDF MMBT3906 MMPQ3906 PZT3906 2N3906 MMBT3906 OT-23 MMPQ3906 SOIC-16 OT-223 model of 2n3906 2N3906 MMBT3906 spice 2n3906 2a E5 sot223 MMBT3906 SOT-23

    DG 402 rp

    Abstract: No abstract text available
    Text: NPDS402 I NPDS403 I NPDS4041 NPDS406 Discrete POWER & Signal Technologies National Semiconductor" t ß NPDS402 NPDS403 NPDS404 NPDS406 D2 s2 — NC ^ S O -8 % NC D1 S1 N-Channel General Purpose Dual Amplifier Sourced from Process 98. Absolute Maximum Ratings*


    OCR Scan     		PDF NPDS402 NPDS403 NPDS404 NPDS406 bS0113D Q040cJ5b DG 402 rp

    NPD5566

    Abstract: NPD5564 npd5565 2n3819 replacement jfet selection guide J2N6485 NDF9406 2N5245 replacement 2N5248 nf5102
    Text: NATL SEUICOND 6 5 0 1130 <D •o 3 a c o ■ IB o a> </ {DISCRETE} NATL " S E M I CO N D, 2û DE t S D 1 1 3 D 28C (D ISCR ETE) ào r+- QD35470 35470 D r-j/ ~ (T> r \ i ru oj n cm w r* r*» Is » t CJ Ci 2 j w 2J W 0 > 0 ) 0 ) 0 j 0 ) 0 ) 0 > 0 > 0 ) 0 ) 0 ) 0 ) 0 ) 0 > 0 > 0 ) 0 >


    OCR Scan     		PDF tSD113D QC3S470 2222PPPPPPÃ NPD5566 NPD5564 npd5565 2n3819 replacement jfet selection guide J2N6485 NDF9406 2N5245 replacement 2N5248 nf5102

    NDT410EL

    Abstract: No abstract text available
    Text: & June 1996 National Semi conduct or " NDT410EL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    OCR Scan     		PDF NDT410EL OT-223 004006b NDT410EL

    NPN sot23 mark NF

    Abstract: BC846 BC846A BC846B BC847 BC847A BC847B BC847C S0113D
    Text: S e m i c o n d u c t o r " BC846A BC846B BC847A BC847B BC847C SOT-23 SOT-23 Mark: 1 A ./1 B Mark: 1 E ./ 1 F ./ 1 G . NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose am plifier applications at collector currents from 1.0 jiA to 50 mA.


    OCR Scan     		PDF BC846A BC846B OT-23 BC847A BC847B BC847C BC846 BC847 NPN sot23 mark NF BC846B BC847C S0113D

    FDH333

    Abstract: 333 marking Diode
    Text: Semiconductor" FDH/FDLL 300/A / 333 r CO LOR BAND MARKING DEVICE LL-34 DO-35 THE PLACEMENT OF THE EXPAN HAS NO RELATIONSHIP TO THE \ OF THE CATHODE TERMINAL v 1ST BAND 2ND BAND FOLL3QO FDLL300A BROWN BROWN G REEN YELLOW FDLL333 BROWN BLUE v GAP High Conductance Low Leakage Diode


    OCR Scan     		PDF FDH300/A FDLL300/A FDH333 FDLL333 300/A FDLL300A LL-34 DO-35 MMBD1501/A-1505/A 333 marking Diode

    2N5133

    Abstract: 2N3565
    Text: This NPN Transistors NATL 2N929 Case Style TO-18 VCBO v CEO V ebo V (V) (V) Min Min Min 45 45 5 'CB0 VCB (nA)@ “ Max 11 10 hFE Min Max 45 350 By 60 40 2N929A TO-18 60 45 6 2 Its 60 40 25 45 45 5 10 45 600 150 100 TO-18 60 60 6 10 45 60 60 6 10 45 2N3246


    OCR Scan     		PDF

    PN2907A

    Abstract: sot-23 M
    Text: / MMPQ2907/ NMT2907 I PZT2907A Discrete POWER & Signal Technologies National Semi conduct or ' " MMBT2907A PN2907A PZT2907A SOT-23 SOT-223 M ark: 2F NMT2907 PN2907A I MMBT2907A MMPQ2907 SOIC-16 C PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier


    OCR Scan     		PDF MMPQ2907/ NMT2907 PZT2907A PN2907A MMBT2907A OT-23 OT-223 PN2907A sot-23 M

    dual P-CHANNEL 30V DS MOSFET

    Abstract: NDS8958 Dual N & P-Channel MOSFET
    Text: Na t t o n a l Semiconductor" July 1996 N D S8958 Dual N & P-Channel Enhancem ent M ode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    OCR Scan     		PDF NDS8958 035fi b5D113D dual P-CHANNEL 30V DS MOSFET NDS8958 Dual N & P-Channel MOSFET

    T3D diode

    Abstract: T3D 55 diode T3D 45 diode Diode T3D 55 T3D 01 DIODE T3D 43 diode T3D 65 diode DIODE T3D 95 diode T3D Diode T3D 30
    Text: Ju n e 1996 National Semiconductor ” NDT451N N-Channel Enhancement Mode Field Effect Transistor Features General Description These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDT451N b501130 T3D diode T3D 55 diode T3D 45 diode Diode T3D 55 T3D 01 DIODE T3D 43 diode T3D 65 diode DIODE T3D 95 diode T3D Diode T3D 30

    797L

    Abstract: NDS9952A 0040027
    Text: May 1996 N ational f i Semiconductor" NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor Features General Description These dual N- and P-channel enhancement mode power field effect transistors are produced using National’s proprietary, high cell density, DMOS


    OCR Scan     		PDF NDS9952A bSD1130 b501130 00400Eci 797L NDS9952A 0040027

    Untitled

    Abstract: No abstract text available
    Text: July 19 96 N ational Semiconductor" NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor G e n e ra l D e s c rip tio n F e a tu re s These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS


    OCR Scan     		PDF

    NDS8926

    Abstract: WNL 760
    Text: e» National July 1 9 9 6 Semiconductor" NDS8926 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, D M O S technology.


    OCR Scan     		PDF NDS8926 bSD113D WNL 760

    j201 national

    Abstract: J201 national j201 J202 MMBFJ201 MMBFJ202 T092 SOT23 N-Channel mark 6
    Text: J201 / J202 / MMBFJ201 / MMBFJ202 & Discrete POW ER & Sig n a l Technologies National S e m i c o n d u c t o r ’ MMBFJ201 MMBFJ202 J201 J202 SOT-23 M ark: 62P / G2Q N-Channel General Purpose Amplifier This device is designed primarily for low level audio and general


    OCR Scan     		PDF MMBFJ201 MMBFJ202 OT-23 OT-23) O-236 j201 national J201 national j201 J202 MMBFJ202 T092 SOT23 N-Channel mark 6

    LL34

    Abstract: LL-34 FDLL457 FDLL300 FDLL333 FDLL456 FDLL456A FDLL457A FDLL458 FDLL458A
    Text: National Semiconductor SEMICOND Surface Mount Diodes NATL Surface Mount Devices Low Leakage Diodes by Descending Bv LEADLESS GLASS PACKAGE FDLL300 Package No. By (V) Min ln <nA) Max LL-34 150 1.0 @ Vr H Vf « Max * If mA c PF Max DISCRETE Device No. Proc.


    OCR Scan     		PDF FDLL300 LL-34 IN300 FDLL333 SeeIN333 FDLL456 FDLL456A LL34 FDLL457 FDLL457A FDLL458 FDLL458A

    NDS9400A

    Abstract: No abstract text available
    Text: Nat i ona I May 1996 Semiconductor" NDS9400A Single P-Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDS9400A bS0113D NDS9400A

    ic nn 5198 k

    Abstract: nn 5198 k Transistor C 5196 fcm 10.7 mhz transistor s34 ic nn 5198 r Transistor C 5198 MMBTH11 MPSH11 Q100
    Text: I MMBTH11 Discrete P O W ER & S ig n a l Technologies National MPSH11 Semiconductor'“ MPSH11 NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 fiA to 10 mA range to 300 MHz, and low frequency drift common-base


    OCR Scan     		PDF MPSH11 MMBTH11 b5D1130 ic nn 5198 k nn 5198 k Transistor C 5196 fcm 10.7 mhz transistor s34 ic nn 5198 r Transistor C 5198 MMBTH11 MPSH11 Q100

    TRANSISTOR 2SC 950

    Abstract: NDT454P c25f
    Text: ß National Semiconductor" June 1996 NDT454P P-Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDT454P Hig13. OT-223 Vos--10V bS0113D D0401SE TRANSISTOR 2SC 950 NDT454P c25f

    NDS9410A

    Abstract: No abstract text available
    Text: May 1996 National Semiconductor" NDS9410A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDS9410A bS0113Q NDS9410A

    NDS9953A

    Abstract: No abstract text available
    Text: Na t i o n a l Semiconductor" M ay 1996 NDS9953A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDS9953A bSG113D NDS9953A