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    Untitled

    Abstract: No abstract text available
    Text: Honeywell HC6364 Military Products 8K x 8 RADIATION-HARDENED STATIC RAM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 urn Process • Total Dose Hardness through 1x106 rad S i02 • Neutron Hardness through 1x1014cm '2 • Access Time of 25 nsec (typical)


    OCR Scan     		PDF HC6364 1x106 1x1014cm

    harris 6616

    Abstract: No abstract text available
    Text: Honeywell ROMs HC6616 2K x 8 RADIATION-HARDENED ROM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxiah .2 \im Process • Typical 45 ns Access Tim e • Total Dose Hardness through 1x106 rad S i02 • Low Operating Power • Neutron Hardness through 1x1014c n r2


    OCR Scan     		PDF 1x106 1x1014c 1x109 1x101 24-Lead HC6616/1 HC6616/2 harris 6616

    Untitled

    Abstract: No abstract text available
    Text: 4551072 b3E D Honeywell ODQIQIM bS^ • H 0 N 3 HONEYldELL/S S E C Advance Information 256K X 16 RADIATION-TOLERANT SRAM HC81640 FEATURES RADIATION OTHER • Total Dose Hardness at Tactical Level • Detects and Corrects All Single and Double Bit Errors Automatically


    OCR Scan     		PDF HC81640 1x101

    Untitled

    Abstract: No abstract text available
    Text: MSS1Ô7E DDDlbDE 3TB • Advance Information HLX6408 512K x 8 STATIC RAM—SOI FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.5 (im Process (Leff = 0.4 nm) • Read/Write Cycle Times <20 ns (Typical) <25 ns (-55 to 125°C)


    OCR Scan     		PDF HLX6408 5x10srad 1x101 1x109

    Untitled

    Abstract: No abstract text available
    Text: b3E J> m 45S 1 Ö 7S GATE ARRAYS QDD1Q2G ^ 5 5 • H 0 N 3 Honeywell HONE YÜ1ELL/S S E C RICMOS SEA OF TRANSISTORS GATE ARRAY HR1060 FEATURES RADIATION HARDNESS OTHER • Total Dose Hardness of >1x106 rad Si02 • Wafers from DESC certified QML 1.2 ¡im process


    OCR Scan     		PDF HR1060 1x106 1x109rad 1x1012rad 1x109upsets/bit-day 1x1014cnrr2

    Untitled

    Abstract: No abstract text available
    Text: • ft fit * y w n Military Products 32K x 8 RADIATION-HARDENED STATIC RAM HC685 : FEATURES RADIATION OTHER • Fabricated with RICMOS IV Bulk 0.8 pm Process • Total Dose Hardness through 1x106 rad S i0 2 • Listed on SM D #5962-921 3 Available as


    OCR Scan     		PDF 1x106 1x1014cm HC685 IL-l-38535 1x109 1x101 36-Lead

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 urn Process (Leff= 0.6 )im) • Read/Write Cycle Times < 17 ns (Typical) <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106rad(Si02)


    OCR Scan     		PDF HX6256 1x106rad 1x1014cm 1x109 1x101 28-Lead 4551A72

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military Products Advance Information 128K x 8 RADIATION-HARDENED STATIC RAM-SOI HX6228 FEATURES OTHER RADIATION • Fabricated with RICMOS IV-E Silicon on Insulator SOI 0.7 |xm Process • Read/Write Cycle Times <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si02)


    OCR Scan     		PDF HX6228 1x106 1x1014cm 1x109rad 1x101 32-Lead 1x106rad 2x105

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products HX6409 HX6218 HX6136 FIFO— SOI FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 jim Process (Leff = 0.65|am) • Read/Write Cycle Times <35 ns (-55° to 125°C)


    OCR Scan     		PDF HX6409 HX6218 HX6136 1x106 1x101 1x109

    Untitled

    Abstract: No abstract text available
    Text: Honeywell HC6216 Military Products 2K x 8 RADIATION-HARDENED STATIC RAM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 |im Process • Typical 45 ns Access Time • Total Dose Hardness through 1x10 rad SiOz • Low Operating Power


    OCR Scan     		PDF HC6216 1x1014cnr2 1x109 1x101

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products FIFO—SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 jam Process (Leff = 0.65|im) OTHER • Read/Write Cycle Times <35 ns (-55° to 125°C)


    OCR Scan     		PDF HX6409 HX6218 HX6136 1x106rad 1x101 1x109

    Untitled

    Abstract: No abstract text available
    Text: Aerospace Electronics FIFO— SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 |a,m Process (Leff = 0.65|a,m) • Read/Write Cycle Times <35 ns (-55° to 125°C)


    OCR Scan     		PDF HX6409 HX6218 HX6136 1x106rad 1x101 1x109

    Untitled

    Abstract: No abstract text available
    Text: G M/HITE /MICROELECTRONICS 2 WS128K32-25XMRH 128Kx32 Radiation Hardened SRAM MODULE ADVANCED* FEATURES • A cce ss Tim e of 25ns R adiation T o le ra n t ■ Organized as 128Kx32; User C onfig u rab le as 2 56K x16 or 5 1 2Kx8 • T o t a l Dose Hardness th ro u g h 1x106 rad Si02


    OCR Scan     		PDF WS128K32-25XMRH 128Kx32 1x106 1x1014crrv2 128Kx32; WS128K32-25XMRH 128K32 128KX32

    KD 2.d smd transistor

    Abstract: No abstract text available
    Text: Honeywell Military Products 32K x 8 RADIATION-HARDENED STATIC RAM HC6856 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Bulk 0.8 |um Process • Total Dose Hardness through 1x106 rad S i02 • Listed on SMD #5962-92153. Available as MIL-l-38535 QML Class Q and Class V


    OCR Scan     		PDF 1x106 1x1014cm 1x109 1x101 HC6856 MIL-l-38535 36-Lead KD 2.d smd transistor

    Untitled

    Abstract: No abstract text available
    Text: HONEYÜI ELL/ S S E C 3ÖE D D 4SS1Ô72 GQOOSSfl 1 HH0N3 Advance Information 16K x 1 MAGNETORESISTIVE RAM MRAM T ^ fc -^ -O S T FEATURES Non-volatile 250 ¡as Read Cycle Time Fabricated with RICMOS 1.2 |am Process 400 ns Write Cycle Time Write Cycles in Excess of 1x1015


    OCR Scan     		PDF 1x101 1x10e 1x1014c

    883ct

    Abstract: No abstract text available
    Text: H O N E Y WE L L / S H o n 1SE D I S E C e y w 4551072 G O G O B a ì M | HC6167 e l l 16K x 1 RADIATION-HARDENED STATIC RAM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 pm Process • Typical 140 ns Access Time • Total Dose Hardness through


    OCR Scan     		PDF HC6167 1x1014cnvz 1x109 1x101 1x10-® 20-pin 883ct

    HX6356

    Abstract: smd transistor AL2
    Text: Honeywell Aerospace Electronics 32K X 8 STATIC RAM—SOI HX6356 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 pm Process (Leff= 0.6 |iim) • Listed On SMD# 5962-95845 • Total Dose Hardness through 1x106rad(Si02)


    OCR Scan     		PDF 1x106rad 1x1014crrv2 1x101 HX6356 36-Lead 1253C, HX6356 smd transistor AL2

    1A15

    Abstract: honeywell hr 20 HLX6408
    Text: Honeywell Advance Information 512K x 8 STATIC RAM—SOI HLX6408 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.5 |im Process (LeH= 0.4 |im) • Read/Write Cycle Times < 20 ns (Typical) ¿25 ns (-55 to 125°C) • Total Dose Hardness through 5x105rad(Si02)


    OCR Scan     		PDF 5x105rad 1x101 HLX6408 1x109 40-Lead 1A15 honeywell hr 20 HLX6408

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products Preliminary FIFO—SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 n.m Process (Lelf = 0.65}im) • Read/Write Cycle Times


    OCR Scan     		PDF HX6409 HX6218 HX6136 1x10U 1x109

    Untitled

    Abstract: No abstract text available
    Text: Honeywell HC6856 Military Products Preliminary 256K-BIT RADIATION-HARDENED STATIC RAM FEATURES OTHER RADIATION • Fabricated with RICMOS Bulk 0.8 im Process • Total Dose Hardness through 1x106 rad(Si02 • Optional Architecture - 32K x 8 - 256Kx 1


    OCR Scan     		PDF HC6856 256K-BIT 1x106 256Kx 1x1014cm 1x109 1x101

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products FIFO— SOI HX6409 HX6218 HX6136 FEATURES • • 1 K x 36, 2 K x 18, 4 K x 9 O rganizations Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 j^m Process (Leff = 0.65|am) OTHER • R ead/W rite Cycle Tim es <35 ns (-55° to 125°C)


    OCR Scan     		PDF 1x10srad 1x1014 1x109 1x1011 1x1010 HX6409 HX6218 HX6136

    harris 6616

    Abstract: No abstract text available
    Text: Honeywell HC6616 Military Products Preliminary 2K x 8 RADIATION-HARDENED ROM FEATURES O TH ER R AD IATIO N • Typical 55 ns A ccess Tim e • Fabricated w ith RICMOS Epitaxial 1.2 |im Process • Low O perating Pow er • S ynchronous O peration • Total Dose H ardness through


    OCR Scan     		PDF HC6616 1x106 1x1014cm 1x109 harris 6616