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    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 p.m Process (Leff= 0.6 p,m) • Listed On SMD#5962-95845 • Total Dose Hardness through 1x106rad(Si02)


    OCR Scan     		PDF 1x106rad 1x101 1x109 HX6256 28-Lead GQG1711

    5962-95845

    Abstract: HX6356
    Text: Honeywell Aerospace Electronics 32K x 8 STATIC RAM—SOI HX6356 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |a,m Process (Leff= 0.6 |a,m) • Listed On SMD# 5962-95845 • Total Dose Hardness through 1x106rad(S i02)


    OCR Scan     		PDF 1x106rad 1x101 HX6356 36-Lead 5962-95845 HX6356

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 urn Process (Leff= 0.6 )im) • Read/Write Cycle Times < 17 ns (Typical) <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106rad(Si02)


    OCR Scan     		PDF HX6256 1x106rad 1x1014cm 1x109 1x101 28-Lead 4551A72

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 32K x 8 ROM— SOI HX6656 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |am Process (Leff = 0.6 |im) • Read Cycle Times < 17 ns (Typical) <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106rad(Si02)


    OCR Scan     		PDF HX6656 1x106rad 1x109 1x101 1x10U 28-Lead MIL-STD-18

    HX6356

    Abstract: smd transistor AL2
    Text: Honeywell Aerospace Electronics 32K X 8 STATIC RAM—SOI HX6356 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 pm Process (Leff= 0.6 |iim) • Listed On SMD# 5962-95845 • Total Dose Hardness through 1x106rad(Si02)


    OCR Scan     		PDF 1x106rad 1x1014crrv2 1x101 HX6356 36-Lead 1253C, HX6356 smd transistor AL2

    CDIP2-T28

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |nm Process (Leff= 0.6 (xm) • Listed On SMD#5962-95845 • Total Dose Hardness through 1x106rad(Si02)


    OCR Scan     		PDF 1x106rad 1x101 1x109 HX6256 28-Lead CDIP2-T28

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Aerospace Electronics HX6356 32K x 8 STATIC RAM—SOI FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |j.m Process (Left= 0.6 (im) • Listed On SMD# 5962-95845 • Total Dose Hardness through 1x106rad(S i02)


    OCR Scan     		PDF HX6356 1x106rad 1x101

    Untitled

    Abstract: No abstract text available
    Text: GEC PLE SS EY w s I rvi i c o n D u i o k s DS3480-2.4 MA9187 RADIATION HARD 65536 X 1 BIT STATIC RAM The MA9187 64k Static RAM is configured as 65536 x 1 bits and manufactured using GPS’s CMOS-SOS high performance, radiation hard, 1.5 xm technology. Thedevice has separate input and outputterminals controlled


    OCR Scan     		PDF DS3480-2 MA9187 MA9187 37bfi522

    900-197

    Abstract: SMD transistor Marking 1x smd marking WMM
    Text: Honeywell Aerospace Electronics A d van ce Inform ation 256K x 1 STATIC RAM—SOI HX6156 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |j,m Process (Lefl = 0.6 |im) • Fast Read/Write Cycle Times < 15 ns (Typical)


    OCR Scan     		PDF 1x106rad 1x101 1x109 HX6156 24-Lead 28-LeadFlat 900-197 SMD transistor Marking 1x smd marking WMM

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 5.12 MEGABIT MEMORY MODULE RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 urn Process (L#fl = 0.6 |im) • Read/Write Cycle Times <,17 ns (Typical) <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad (Si02)


    OCR Scan     		PDF HX84050 1x106 1x10s 200-Lead

    Untitled

    Abstract: No abstract text available
    Text: • ft fit * y w n Military Products 32K x 8 RADIATION-HARDENED STATIC RAM HC685 : FEATURES RADIATION OTHER • Fabricated with RICMOS IV Bulk 0.8 pm Process • Total Dose Hardness through 1x106 rad S i0 2 • Listed on SM D #5962-921 3 Available as


    OCR Scan     		PDF 1x106 1x1014cm HC685 IL-l-38535 1x109 1x101 36-Lead

    Untitled

    Abstract: No abstract text available
    Text: Honeywell 32K X 8 RADIATION-HARDENED STATIC RAM HC6856 FEATURES RADIATION • Fabricated with RICMOS'“ IV Bulk 0.8 urn Process • Total Dose Hardness through 1x10e rad Si02 • Neutron Hardness through 1x1014 cnrr2 OTHER • Read/Write Cycle Times s 40 ns (-55 to 125°C)


    OCR Scan     		PDF 1x10e 1x101 36-Lead 28-Lead HC6856 1E-10

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military Products Advance Information 128K x 8 RADIATION-HARDENED STATIC RAM-SOI HX6228 FEATURES OTHER RADIATION • Fabricated with RICMOS IV-E Silicon on Insulator SOI 0.7 |xm Process • Read/Write Cycle Times <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si02)


    OCR Scan     		PDF HX6228 1x106 1x1014cm 1x109rad 1x101 32-Lead 1x106rad 2x105

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products Preliminary 128K x 8 STATIC RAM—Low Power SOI HLX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.65 |im Low Power Process (Leff= 0.5 |am) • Read/Write Cycle Times < 25 ns (-55 to 125°C)


    OCR Scan     		PDF 1x106rad 1x101 1x109 HLX6228 32-Lead

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products FIFO—SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 jam Process (Leff = 0.65|im) OTHER • Read/Write Cycle Times <35 ns (-55° to 125°C)


    OCR Scan     		PDF HX6409 HX6218 HX6136 1x106rad 1x101 1x109

    Untitled

    Abstract: No abstract text available
    Text: Aerospace Electronics FIFO— SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 |a,m Process (Leff = 0.65|a,m) • Read/Write Cycle Times <35 ns (-55° to 125°C)


    OCR Scan     		PDF HX6409 HX6218 HX6136 1x106rad 1x101 1x109

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS'“ IV Silicon on Insulator SOI 0.75 (am Process (Lel(= 0.6 |am) • Read/Write Cycle Times < 17 ns (Typical) < 2 5 ns (-55 to 125°C)


    OCR Scan     		PDF 1x106rad 1x1011 HX6256 28-Lead MIL-STD-1835, CDIP2-T28 36-Lead

    AVW smd

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 5 MEGABIT MEMORY MODULE HX84050 RADIATION OTHER • • Listed on SMD #5962-96840 Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 jim Process (Lett = 0.6 jxm) • Total Dose Hardness through 1x10 rad (S i0 2)


    OCR Scan     		PDF HX84050 1x101 1x109 200-Lead AVW smd

    KD 2.d smd transistor

    Abstract: No abstract text available
    Text: Honeywell Military Products 32K x 8 RADIATION-HARDENED STATIC RAM HC6856 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Bulk 0.8 |um Process • Total Dose Hardness through 1x106 rad S i02 • Listed on SMD #5962-92153. Available as MIL-l-38535 QML Class Q and Class V


    OCR Scan     		PDF 1x106 1x1014cm 1x109 1x101 HC6856 MIL-l-38535 36-Lead KD 2.d smd transistor

    CDIP2-T28

    Abstract: No abstract text available
    Text: Honeywell Preliminary Military & Space Products 32K x 8 STATIC RAM— Low Power SOI HLX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS'” IV Silicon on Insulator SOI 0.7 (im Low Power Process (Letl= 0.55 urn) • Read/Write Cycle Times < 17 ns (Typical)


    OCR Scan     		PDF 1x106rad HLX6256 1x109 28-Lead CDIP2-T28

    hx6856

    Abstract: No abstract text available
    Text: Honeywell Military Products Preliminary 32K x 8 RADIATION-HARDENED STATIC RAM-SOI HX6856 FEATURES RADIATION OTHER Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 irni Process • Read/W rite Cycle Times s 25 ns (-55 to 125°C) Total Dose Hardness through 1x106 rad(S i02)


    OCR Scan     		PDF 1x106 1x101 HX6856 36-Lead 28-Lead hx6856

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI I HX6356 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |im Process (Leff= 0.6 |im) • Read/Write Cycle Times < 17 ns (Typical) <25 ns (-55 to 125°C)


    OCR Scan     		PDF HX6356 1x106rad 1x101 36-Lead 4551fl72 6G638

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 5 MEGABIT MEMORY MODULE HX84050 RADIATION OTHER • • Listed on SMD #5962-96840 Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 jam Process (Leff = 0.6 ^m) • Total Dose Hardness through 1x106 rad (S i0 2)


    OCR Scan     		PDF HX84050 1x106 1x101 1x109 0GD1755

    honeywell mram

    Abstract: No abstract text available
    Text: 52E D • 4SSlfl?2 - 0D00fl4D DBO ■ H0 N3 HONEYI i l EL L/ S S E C _ Honeywell Preliminary Military Products 16K x 1 NON-VOLATILE RAM HC7167 'T - 4 k '2 £ '0 £ ' FEATURES • Non-volatile and NDRO Non-destructive read out


    OCR Scan     		PDF 0D00fl4D 1x106 1x1014N/cm2 1x101 1x106rad honeywell mram