Untitled
Abstract: No abstract text available
Text: MSS1Ô7E DDDlbDE 3TB • Advance Information HLX6408 512K x 8 STATIC RAM—SOI FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.5 (im Process (Leff = 0.4 nm) • Read/Write Cycle Times <20 ns (Typical) <25 ns (-55 to 125°C)
|
OCR Scan
|
PDF
|
HLX6408
5x10srad
1x101
1x109
|
Untitled
Abstract: No abstract text available
Text: G M/HITE /MICROELECTRONICS 2 WS128K32-25XMRH 128Kx32 Radiation Hardened SRAM MODULE ADVANCED* FEATURES • A cce ss Tim e of 25ns R adiation T o le ra n t ■ Organized as 128Kx32; User C onfig u rab le as 2 56K x16 or 5 1 2Kx8 • T o t a l Dose Hardness th ro u g h 1x106 rad Si02
|
OCR Scan
|
PDF
|
WS128K32-25XMRH
128Kx32
1x106
1x1014crrv2
128Kx32;
WS128K32-25XMRH
128K32
128KX32
|
HX6356
Abstract: smd transistor AL2
Text: Honeywell Aerospace Electronics 32K X 8 STATIC RAM—SOI HX6356 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 pm Process (Leff= 0.6 |iim) • Listed On SMD# 5962-95845 • Total Dose Hardness through 1x106rad(Si02)
|
OCR Scan
|
PDF
|
1x106rad
1x1014crrv2
1x101
HX6356
36-Lead
1253C,
HX6356
smd transistor AL2
|