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    1X1014 Search Results

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    1X1014 Price and Stock

    Bourns Inc 4611X-101-471LF

    RES ARRAY 10 RES 470 OHM 11SIP
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    DigiKey 4611X-101-471LF Bulk 1,971 1
    • 1 $0.61
    • 10 $0.409
    • 100 $0.2147
    • 1000 $0.12172
    • 10000 $0.11563
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    Avnet Americas 4611X-101-471LF Bulk 16 Weeks 2,000
    • 1 -
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    • 1000 -
    • 10000 $0.11449
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    Mouser Electronics 4611X-101-471LF 2,067
    • 1 $0.63
    • 10 $0.435
    • 100 $0.341
    • 1000 $0.123
    • 10000 $0.123
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    Newark 4611X-101-471LF Bulk 2,000
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    • 1000 $0.129
    • 10000 $0.118
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    RS 4611X-101-471LF Bulk 17 Weeks 2,000
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    • 10000 $0.176
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    Avnet Abacus 4611X-101-471LF 19 Weeks 2,000
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    Master Electronics 4611X-101-471LF
    • 1 -
    • 10 -
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    • 1000 $0.1722
    • 10000 $0.1248
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    Bourns Inc 4611X-101-473LF

    RES ARRAY 10 RES 47K OHM 11SIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 4611X-101-473LF Bulk 1,930 1
    • 1 $0.61
    • 10 $0.409
    • 100 $0.2147
    • 1000 $0.12172
    • 10000 $0.11563
    		Buy Now
    Avnet Americas 4611X-101-473LF Bulk 16 Weeks 2,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.11449
    		Buy Now
    Mouser Electronics 4611X-101-473LF 136
    • 1 $0.61
    • 10 $0.287
    • 100 $0.192
    • 1000 $0.121
    • 10000 $0.115
    		Buy Now
    Newark 4611X-101-473LF Bulk 2,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.129
    • 10000 $0.118
    		Buy Now
    RS 4611X-101-473LF Bulk 17 Weeks 2,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.13
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    Avnet Abacus 4611X-101-473LF 19 Weeks 2,000
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    Master Electronics 4611X-101-473LF
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.1722
    • 10000 $0.1248
    		Buy Now

    Amphenol Aerospace 165-61X-1014

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    DigiKey 165-61X-1014 Bulk 2
    • 1 -
    • 10 $1010.3
    • 100 $1010.3
    • 1000 $1010.3
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    Interstate Connecting Components 165-61X-1014
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    JRH Electronics 165-61X-1014

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    Fix Supply 60211X-10-1-4

    Push to Connect Tube Fitting - S
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 60211X-10-1-4 Bulk 1
    • 1 $69.92
    • 10 $69.92
    • 100 $69.92
    • 1000 $69.92
    • 10000 $69.92
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    1X1014 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor m285

    Abstract: 167A690 transistor C013 transistor k450 transistor f630 182A934 cm c013 D650
    Text: 167A690 182A934 32K x 8 Radiation Hardened Static RAM – 5 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		PDF 167A690 182A934 1x106 1x1014 1x109 1x10-11 1x1012 5962H92153 36-Lead 28-Lead transistor m285 167A690 transistor C013 transistor k450 transistor f630 182A934 cm c013 D650

    238A792

    Abstract: No abstract text available
    Text: 128K x 32 Radiation Hardened Static RAM MCM– 3.3V 238A792 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		PDF 238A792 1x106 1x1014 1x109 1x10-11 64-Lead AS9000, 238A792

    190A325

    Abstract: C710 D 5962h96877
    Text: 190A325 198A592 128K x 8 Radiation Hardened Static RAM – 5 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		PDF 190A325 198A592 5962H96877 40-Lead 32-Lead 1x106 1x1014 1x109 1x10-11 C710 D 5962h96877

    S4 46

    Abstract: AEFJANTXV1N4100-1-BAE/TR/BAE 225A833
    Text: 128K x 32 Radiation Hardened Static RAM MCM– 5 V 225A833 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		PDF 225A833 1x106 1x1014 1x109 1x10-11 64-Lead AS9000, S4 46 AEFJANTXV1N4100-1-BAE/TR/BAE 225A833

    HX84050

    Abstract: No abstract text available
    Text: Military & Space Products 5 MEGABIT MEMORY MODULE HX84050 RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed on SMD #5962-96840 6 • Total Dose Hardness through 1x10 rad (SiO2) • Neutron Hardness through 1x1014 cm-2


    Original     		PDF HX84050 1x1014 1x109 1x1011 1x10-10 200-Lead HX84050

    CQFj 44

    Abstract: CQFJ 68 lead CQFJ
    Text: WS128K32-25G2SMX 128Kx32 Radiation Hardened SRAM MODULE ADVANCED* FEATURES • Access Time of 25ns ■ Radiation Tolerant • Total Dose Hardness through 1x106 rad SiO2 ■ Neutron Hardness through 1x1014 cm-2 ■ Dynamic and Static Transient Upset Hardness through


    Original     		PDF WS128K32-25G2SMX 128Kx32 1x106 1x1014 1x1011 1x1012 1x10-10 WS128K32-25AR 128Kx32 CQFj 44 CQFJ 68 lead CQFJ

    A1760

    Abstract: 86-65-3 AEFJANTXV1N4100-1-BAE/TR/BAE
    Text: 128K x 32 Radiation Hardened Static RAM MCM– 3.3V 238A792 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		PDF 238A792 64-Lead 1x106 1x1014 1x109 1x10-11 AS9000, A1760 86-65-3 AEFJANTXV1N4100-1-BAE/TR/BAE

    BAE Systems

    Abstract: AEFJANTXV1N4100-1-BAE/TR/BAE 209A542 transistor B885 LM136A-2.5QML
    Text: 128K x 16 Radiation Hardened Static RAM MCM – 3.3 V 209A542 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		PDF 209A542 1x106 1x1014 1x109 1x10-11 40-Lead AS9000, BAE Systems AEFJANTXV1N4100-1-BAE/TR/BAE 209A542 transistor B885 LM136A-2.5QML

    transistor B885

    Abstract: 201A072 225A837 B885
    Text: 201A072 225A837 256K x 8 Radiation Hardened Static RAM MCM – 5 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		PDF 201A072 225A837 1x106 1x1014 1x109 1x10-11 1x1012 5962H99541 40-Lead AS9000, transistor B885 201A072 225A837 B885

    203A665

    Abstract: J122 SMD TRANSISTOR 314 j122
    Text: 203A665 128K x 8 Radiation Hardened Static RAM – 3.3 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		PDF 203A665 1x106 1x1014 1x109 1x10-11 1x1012 5962H98615 40-Lead AS9000, 203A665 J122 SMD TRANSISTOR 314 j122

    Untitled

    Abstract: No abstract text available
    Text: D-HR Series High Insulation Resistance, High Voltage Relays -10kV & 15kV 10kV or 15kV Isolation Low Contact Resistance 1x1014 Ohms Minimum Insulation Resistance PCB or Flying Leads Connections Ideal for sensitive test and measurement circuits which require low leakage current losses


    Original     		PDF -10kV 1x1014 DAT71210F-HR) ISO9001

    Untitled

    Abstract: No abstract text available
    Text: 203A665 128K x 8 Radiation Hardened Static RAM – 3.3 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		PDF 203A665 5962H98615 40-Lead 1x106 1x1014 1x109 1x10-11 1x1012 AS9000, x5040)

    198A854

    Abstract: BAE Systems DQ72
    Text: 128K x 72 x 2 Radiation Hardened Static RAM MCM– 3.3 V 198A854 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		PDF 198A854 1x106 1x1014 1x109 1x10-11 1x1012 308-Lead AS9000, 198A854 BAE Systems DQ72

    a3050

    Abstract: 86-65-3 D0950
    Text: 128K x 72 x 2 Radiation Hardened Static RAM MCM– 3.3 V 198A854 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		PDF 198A854 308-Lead 1x106 1x1014 1x109 1x10-11 1x1012 AS9000, a3050 86-65-3 D0950

    transistor B885

    Abstract: 209A542 AEFJANTXV1N4100-1-BAE/TR/BAE LM136A-2.5QML
    Text: 128K x 16 Radiation Hardened Static RAM MCM – 3.3 V 209A542 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		PDF 209A542 40-Lead 1x106 1x1014 1x109 1x10-11 AS9000, transistor B885 209A542 AEFJANTXV1N4100-1-BAE/TR/BAE LM136A-2.5QML

    Untitled

    Abstract: No abstract text available
    Text: Honeywell 32K X 8 RADIATION-HARDENED STATIC RAM HC6856 FEATURES RADIATION • Fabricated with RICMOS'“ IV Bulk 0.8 urn Process • Total Dose Hardness through 1x10e rad Si02 • Neutron Hardness through 1x1014 cnrr2 OTHER • Read/Write Cycle Times s 40 ns (-55 to 125°C)


    OCR Scan     		PDF 1x10e 1x101 36-Lead 28-Lead HC6856 1E-10

    RAD HARD TRENCH TRANSISTOR

    Abstract: No abstract text available
    Text: Honeywell 64K X 1 RADIATION-HARDENED STATIC RAM - SOI HX6464 FEATURES RADIATION • Fabricated with R IC M O S1“ Silicon on Insulator SOI 1.2 (im process • Total Dose Hardness through 1x10 e rad (S i0 2) • Neutron Hardness through 1x1014 cm 2 OTHER


    OCR Scan     		PDF 1x101 PIN23 HX6464/1 HX6464/2 HX6464/3 RAD HARD TRENCH TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: Honeywell A dvance Information HC83240 128K X 32 RADIATION-TOLERANT SRAM FEATURES RADIATION OTHER • Total Dose Hardness at Tactical Level • Automatic "Fly-By" Error Detect and Correct EDC for any single and double bit errors • Neutron Hardness through 1x1014 crrr2


    OCR Scan     		PDF 1x101 HC83240 SEL17 SEL18 SEL19 SEL20 SEL21 SEL22

    Untitled

    Abstract: No abstract text available
    Text: Honeywell HC6364 Military Products 8K x 8 RADIATION-HARDENED STATIC RAM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 urn Process • Total Dose Hardness through 1x106 rad S i02 • Neutron Hardness through 1x1014cm '2 • Access Time of 25 nsec (typical)


    OCR Scan     		PDF HC6364 1x106 1x1014cm

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Advance Information 256K x 16 RADIATION-TOLERANT SRAM HC81640 FEATURES R A D IA TIO N OTHER • Total D ose H ardness at Tactical Level • Detects and Corrects All Single and Double Bit Errors Automatically • Neutron H ardness through 1x1014 cm 2


    OCR Scan     		PDF 1x101 HC81640

    harris 6616

    Abstract: No abstract text available
    Text: Honeywell ROMs HC6616 2K x 8 RADIATION-HARDENED ROM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxiah .2 \im Process • Typical 45 ns Access Tim e • Total Dose Hardness through 1x106 rad S i02 • Low Operating Power • Neutron Hardness through 1x1014c n r2


    OCR Scan     		PDF 1x106 1x1014c 1x109 1x101 24-Lead HC6616/1 HC6616/2 harris 6616

    Untitled

    Abstract: No abstract text available
    Text: Honeywell SRAMs 2K x 8 RADIATION-HARDENED STATIC RAM HC6216 FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1,2nm Process • Typical 45 ns Access Tim e • Total Dose Hardness through 1x10 rad S i0 2 • Low Operating Power • Neutron Hardness through 1x1014 cm 2


    OCR Scan     		PDF 1x101 1x109 24-Lead

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Preliminary MULTICHIP MODULES HC80805 64K X 8 RADIATION-TOLERANT SRAM FEATURES RADIATION OTHER • Total Dose Hardness through 1x106 rad Si02 • Spare Memory Chip can be Substituted On-The-Fly • Neutron Hardness through 1x1014 crrv2 • Access Time <60 nsec


    OCR Scan     		PDF 1x106 1x101 1x109 HC80805 BADDR16 BADDR15 122-lead

    Untitled

    Abstract: No abstract text available
    Text: S5E J> m 4 5 5 1 0 7 3 0 0 0 0 0 3 0 4 22 • Honeywell H0N3 - HONEYlüELL/S S E C Military Products Advance Information 128K x 8 RADIATION-HARDENED STATIC RAM - SOI HX6828 FEATURES RADIATION OTHER • Fabricated with RICMOS Silicon on Insulator


    OCR Scan     		PDF HX6828 1x106 1x101