HX6408
Abstract: No abstract text available
Text: Honeywell Advance information HX6408 512K x 8 STATIC RAM—SOI FEATURES RADIATION OTHER • Fabricated with RICMOS V Silicon on Insulator SOI 0.5 |im Process (Lef) = 0.4 pm) • Read/Write Cycle Times <25 ns (-55 to 125°C) • Total Dose Hardness >5x105rad(Si02)
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HX6408
5x105rad
1x109
1x101
40-Lead
D2888
3Q172S
HX6408
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1A15
Abstract: honeywell hr 20 HLX6408
Text: Honeywell Advance Information 512K x 8 STATIC RAM—SOI HLX6408 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.5 |im Process (LeH= 0.4 |im) • Read/Write Cycle Times < 20 ns (Typical) ¿25 ns (-55 to 125°C) • Total Dose Hardness through 5x105rad(Si02)
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5x105rad
1x101
HLX6408
1x109
40-Lead
1A15
honeywell hr 20
HLX6408
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900198
Abstract: HX6408 si02 1a15
Text: Honeywel Advance Information 512K x 8 STATIC RAM—SOI HX6408 FEATURES RADIATION OTHER • Fabricated with RICMOS V Silicon on Insulator SOI 0.5 |a,m Process (Leff = 0.4 |a,m) • Read/Write Cycle Times < 2 5 ns (-55 to 125°C) • Total Dose Hardness >5x105rad(S i02)
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OCR Scan
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5x105rad
1x109
1x101
40-Lead
HX6408
900198
HX6408
si02
1a15
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NSL 32 equivalent
Abstract: AVW smd AVW smd transistor
Text: Honeywell Aerospace Electronics Advance Information 512K x 8 STATIC RAM—SOI HX6408 FEATURES RADIATION OTHER • • Read/Write Cycle Times < 20 ns, 3.3 V , 0 to 80°C < 25 ns, (3.3 V), -55 to 125°C Fabricated with RICMOS V Silicon On Insulator (SOI) 0.35 [im Process (Left = 0.28 |im)
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36-Lead
HX6408
5x105rad
1x101
NSL 32 equivalent
AVW smd
AVW smd transistor
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