1961 30 TRANSISTOR Search Results

1961 30 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

1961 30 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor kc 2026 Abstract: 2N665 kc 2026 MIL-T-195 Germanium itt Text: MIL-S-19500/58D 28 February 1966 SUPERSEDING iUTT._rr_i a e;fin /K a n 1V A 1 U ~x “ *i/u W \Jf UUV/ 30 January 1961 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, HIGH-POWER TVDT? OMflfiR 1 1 X U CI11UUU This specification is m andatory for use by all D epart	OCR Scan	MIL-S-19500/58D MIL-T-195 00/58C 2N665 MIL-S-19500, MIL-S-19500/58D MIL-S-19500 transistor kc 2026 2N665 kc 2026 Germanium itt	PDF
2SC 9012 Abstract: 2N243 2N244 1961 30 TRANSISTOR lc 5012 m ScansUX7 9012 transistor transistor 2sc 9012 Text: TYPES 2N243, 2N244 N-P-N GROWN-JUNCTION SILICON TRANSISTORS B U LL ET IN NO. DL-S 612238, D EC EM B E R 1961 Oval Welded Package m echanical data The transistor is in an oval welded package with glass-to-metal hermetic seal between case and leads. Unit weight is approximately 1 gram. The mounting clip is hardware supplied with the transistor.	OCR Scan	2N243, 2N244 60x10' 300x10-* 2SC 9012 2N243 1961 30 TRANSISTOR lc 5012 m ScansUX7 9012 transistor transistor 2sc 9012	PDF
Untitled Abstract: No abstract text available Text: bbS3T31 QQE5T70 TET H A P X N AMER PHILIPS/DISCRETE PXT2907/A b?E D SILICON PLANAR EPITAXIAL TRANSISTOR PNP silicon planar epitaxial transistor, housed in a SOT89 envelope. It is intended fo r switching and linear applications. The complementary type is PXT2222/A.	OCR Scan	bbS3T31 QQE5T70 PXT2907/A PXT2222/A. PXT2907 PXT2907A	PDF
transistor P2F Abstract: MARKING P2F P2B MARKING CODE MARKING H3B p2F 45 IEC134 PXT2907 PXT2907A 1961 30 TRANSISTOR ON MARKING P2F Text: 711005b □ f l 2 fl • P H I N PXT2907/A SILICON PLANAR EPITAXIAL TRANSISTOR PNP silicon planar epitaxial transistor, housed in a SOT89 envelope. It is intended fo r switching and linear applications. The complementary type is PXT2222/A. QUICK REFERENCE DA TA	OCR Scan	711005b PXT2907/A PXT2222/A. PXT2907 PXT2907A transistor P2F MARKING P2F P2B MARKING CODE MARKING H3B p2F 45 IEC134 PXT2907 PXT2907A 1961 30 TRANSISTOR ON MARKING P2F	PDF
transistor ALG 20 Abstract: No abstract text available Text: 711002b A2fl •PHIN PXT2907/A SILICON PLANAR EPITAXIAL TRANSISTOR PNP silicon planar epitaxial transistor, housed in a SOT89 envelope. It is intended fo r switching and linear applications. The complementary type is PXT2222/A. QUICK REFERENCE D A TA PXT2907	OCR Scan	711002b PXT2907/A PXT2222/A. PXT2907 PXT2907A transistor ALG 20	PDF
Transistor D 799 Abstract: transistor BD 522 transistor motorola 114-8 bd799 TRANSISTOR bd 147 B0801 motorola s 114-8 transistor BD 800 Transistor K 799 1961 30 TRANSISTOR Text: MOTOROLA sc XSTRS/R F 1SE D I fe,3b?aS4 0 D Ö4 75 7 G \| MOTOROLA BD795 BD797 SEMICONDUCTOR TECHNICAL DATA BD799 BD801 PLASTIC HIGH POWER SILICON NPN TRANSISTOR 8 AMPERE POWER TRANSISTOR . . . designed for use up to 3 0 W att audio amplifiers utilizing complementary or quasi complementary circuits.	OCR Scan	BD795 BD797 BD799 BD801 BD797 B0801 BD796 BD801 Transistor D 799 transistor BD 522 transistor motorola 114-8 TRANSISTOR bd 147 motorola s 114-8 transistor BD 800 Transistor K 799 1961 30 TRANSISTOR	PDF
8D241 Abstract: No abstract text available Text: BD241D, BD241E, BD241F NPN SILICON POWER TRANSISTORS C opyrights 1997, j*9wer Limited, UK • 40 W at 25°C Caae Temperatura • 3 A Continuous Collector Current • 5 A Peak Collector Currant • Customer-SpecHied Selections Available SEPTEMBER 1961 - REVISED MARCH 1997	OCR Scan	BD241D, BD241E, BD241F O-220 BD241D BD241E 8D241	PDF
SP571 Abstract: diode sg 71 diode sg 47 sgsp571 sp 571 diode sg 55 diode c142 SG-47 diode C144 e s j P472 Text: S G S-THOMSON 07E 1> j TTETEB? OOlT'iai 4 ï 73C 17418 J}_ 7 Z 3 J - / 3 SGSP47Í/P472¿\| \|SGSP571/F572\| l\l-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field	OCR Scan	SGSP47 /P472¿ SGSP571/F572\| SP472 SP572 OT-93 SP471 SP571 T471/P472 SGSP57I/P572 diode sg 71 diode sg 47 sgsp571 sp 571 diode sg 55 diode c142 SG-47 diode C144 e s j P472	PDF
Untitled Abstract: No abstract text available Text: Preliminary PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, PCS Band, 1930 – 1990 MHz Description The PTF180101M is a 10-watt GOLDMOS FET device intended for EDGE applications in the PCS band. This LDMOS device operates at 50% efficiency P–1dB . Full gold metallization ensures excellent device lifetime	Original	PTF180101M PTF180101M 10-watt PTF180101M* TSSOP-10	PDF
TSSOP10 Abstract: tSSOP10 Package Text: Preliminary PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, PCS Band, 1930 – 1990 MHz Description The PTF180101M is a 10-watt GOLDMOS FET device intended for EDGE applications in the PCS band. This LDMOS device operates at 50% efficiency P–1dB .	Original	PTF180101M PTF180101M 10-watt PTF180101M* TSSOP-10 TSSOP10 tSSOP10 Package	PDF
2N512 Abstract: Texas Germanium 2N512B 5 amp germanium pnp Germanium Amplifier Germanium Transistor GERMANIUM PNP LOW POWER TRANSISTORS 2N512A Germanium power Text: TYPES 2N512, 2N512A, AND 2N512B P-N-P ALLOY-JUNCTION GERMANIUM HIGH-POWER TRANSISTORS T Y P E S 2N 512, 2 N 512A , and 2 N 5 1 2 B B U L L E T IN NO. DL-S 611472, MARCH 4 0 , 60, or 80 VOLTS 15-Amp Collector Current 150-Watt Dissipation LOW lco LOW VK LOW THERMAL RESISTANCE	OCR Scan	2N512, 2N512A, 2N512B 15-Amp 150-Watt 7S222 2N512 Texas Germanium 5 amp germanium pnp Germanium Amplifier Germanium Transistor GERMANIUM PNP LOW POWER TRANSISTORS 2N512A Germanium power	PDF
transistor P2F Abstract: 1961 30 TRANSISTOR p2F 45 PXT2907 PXT2907A P2B MARKING CODE PXT2222 Text: • bb53^31 0GES‘ì7D TET H A P X N AHER PHILIPS/DISCRETE PXT2907/A b?E D SILICON PLANAR EPITAXIAL TRANSISTOR PNP silicon planar e p ita xia l tran sisto r, housed in a SO T89 envelope. I t is intended fo r sw itching and linear applications. T he com p le m e n tary ty p e is P X T 2 2 2 2 /A .	OCR Scan	2517D PXT2907/A PXT2222/A. PXT2907 PXT2907A transistor P2F 1961 30 TRANSISTOR p2F 45 PXT2907 PXT2907A P2B MARKING CODE PXT2222	PDF
2N1132 Abstract: 2N1131 Text: TYPES 2N1131, 2N1132 P-N-P SILICON TRANSISTORS B U L L E T IN NO. D L-S 731775, J U N E 1961- R E V IS E D M A R C H 1973 GENERAL PURPOSE MEDIUM-POWER TRANSISTORS • 2 Watts at 2S°C Case Temperature • Complements to 2N696 and 2N697 • 10-ohm Saturation Resistance max	OCR Scan	2N1131, 2N1132 2N696 2N697 10-ohm 2N1131	PDF
FP11G Abstract: FP1189-G Text: FP1189 ½-Watt HFET Product Features Product Description Functional Diagram 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years The FP1189 is a high performance ½-Watt HFET	Original	FP1189 OT-89 FP1189 FP11G FP1189-G	PDF

RFID ID-20 Abstract: 113 marking code transistor ROHM HFET sot-89 MARKING CODE ab FP1189-PCB2140S FP1189-PCB900S JESD22-A114 FP1189 FP1189-PCB1900S 25c021 Text: FP1189 The Communications Edge TM ½-Watt HFET Product Information Product Description Functional Diagram The FP1189 is a high performance ½-Watt HFET Heterostructure FET in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 125 mA to achieve +40 dBm	Original	FP1189 FP1189 OT-89 1-800-WJ1-4401 RFID ID-20 113 marking code transistor ROHM HFET sot-89 MARKING CODE ab FP1189-PCB2140S FP1189-PCB900S JESD22-A114 FP1189-PCB1900S 25c021	PDF
RFID ID-20 Abstract: marking c7 sot-89 113 marking code transistor ROHM FP1189 FP1189-PCB1900S FP1189-PCB2140S FP1189-PCB900S JESD22-A114 30ACPR ohm resistor 1 W 100 ROhm Text: FP1189 The Communications Edge TM ½-Watt HFET Product Information Product Description Functional Diagram The FP1189 is a high performance ½-Watt HFET Heterostructure FET in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 125 mA to achieve +40 dBm	Original	FP1189 FP1189 OT-89 1-800-WJ1-4401 RFID ID-20 marking c7 sot-89 113 marking code transistor ROHM FP1189-PCB1900S FP1189-PCB2140S FP1189-PCB900S JESD22-A114 30ACPR ohm resistor 1 W 100 ROhm	PDF
XD010-24S-D2F Abstract: No abstract text available Text: Preliminary Product Description The XD010-24S-D2F 10W power module is a 2-stage Class A/AB amplifier module for use in the driver stages of CDMA RF power amplifiers. The power transistors are fabricated using Sirenza’s latest, high performance LDMOS process. This unit operates from a single voltage and has internal temperature compensation of the bias voltage to ensure consistant	Original	XD010-24S-D2F XD010-24S-D2F 30mils EDS-102932	PDF
FP1189-G Abstract: FP11G FP1189 FP1189-PCB1900S FP1189-PCB2140S FP1189-PCB900S marking c7 sot-89 Text: FP1189 The Communications Edge TM Product Information ½-Watt HFET Product Features Product Description Functional Diagram 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package	Original	FP1189 OT-89 FP1189 1-800-WJ1-4401 FP1189-G FP11G FP1189-PCB1900S FP1189-PCB2140S FP1189-PCB900S marking c7 sot-89	PDF
FP11G Abstract: TRANSISTOR BC 158 pnp WJ transistor bc 206 transistor bc 3843 Text: FP1189 ½-Watt HFET Product Features • • • • • • 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years Functional Diagram The FP1189 is a high performance ½-Watt HFET	Original	FP1189 OT-89 FP1189 1-800-WJ1-4401 FP11G TRANSISTOR BC 158 pnp WJ transistor bc 206 transistor bc 3843	PDF
MARKING S0 sot89 Abstract: bc 3843 sot-89 marking dn Text: FP1189 The Communications Edge TM Product Information ½-Watt HFET Product Features x x x x x x 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package x MTTF >100 Years Functional Diagram	Original	FP1189 OT-89 FP1189 1-800-WJ1-4401 MARKING S0 sot89 bc 3843 sot-89 marking dn	PDF
FP11G Abstract: 113 marking code transistor ROHM FP1189 FP1189-G FP1189-PCB1900S FP1189-PCB2140S FP1189-PCB900S Text: FP1189 ½ - Watt HFET Product Information Product Features Product Description Functional Diagram 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz The FP1189 is a high performance ½-Watt HFET Heterostructure FET in a low-cost SOT-89 surfacemount package. This device works optimally at a drain	Original	FP1189 FP1189 OT-89 WJ1-4401 FP11G 113 marking code transistor ROHM FP1189-G FP1189-PCB1900S FP1189-PCB2140S FP1189-PCB900S	PDF
Untitled Abstract: No abstract text available Text: FP1189 ½-Watt HFET Product Features Product Description Functional Diagram 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years The FP1189 is a high performance ½-Watt HFET	Original	FP1189 OT-89 FP1189 1-800-WJ1-4401	PDF
FP11G Abstract: fp1189-g rfid reader id-20 FP1189 FP1189-PCB1900S FP1189-PCB2140S FP1189-PCB900S TRANSISTOR BC 206 PNP Text: FP1189 ½-Watt HFET Product Features • • • • • • 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years Functional Diagram The FP1189 is a high performance ½-Watt HFET	Original	FP1189 FP1189 OT-89 1-800-WJ1-4401 FP11G fp1189-g rfid reader id-20 FP1189-PCB1900S FP1189-PCB2140S FP1189-PCB900S TRANSISTOR BC 206 PNP	PDF
B1329 Abstract: transistor B1010 transistor a935 transistor b1329 transistor b1330 A1482 a935 a935 transistor transistor b1332 transistor a934 Text: Transistors TO -92L • TO -92LS • MRT TO-92L is a high power version of TO-92 and TO-92LS is a slimmed TO-92L. MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine. Package Application T0-92L T0-92LS Pc W (Ta=25°C )	OCR Scan	-92LS O-92L O-92LS O-92L. T0-92L T0-92LS A1902 B1595 B1596 2SC4722 B1329 transistor B1010 transistor a935 transistor b1329 transistor b1330 A1482 a935 a935 transistor transistor b1332 transistor a934	PDF

1961 30 TRANSISTOR Search Results

1961 30 TRANSISTOR Result Highlights (5)

1961 30 TRANSISTOR Datasheets Context Search

transistor kc 2026

2SC 9012

Untitled

transistor P2F

transistor ALG 20

Transistor D 799

8D241

SP571

Untitled

TSSOP10

2N512

transistor P2F

2N1132

FP11G

RFID ID-20

RFID ID-20

XD010-24S-D2F

FP1189-G

FP11G

MARKING S0 sot89

FP11G

Untitled

FP11G

B1329