HFET Search Results

HFET Result Highlights (5)

Part	Manufacturer	Description
LT3081HFE#TRPBF	Analog Devices	1.5A 1x Res Rugged Lin Reg w/
LT3517HFE#TRPBF	Analog Devices	Full-Featured LED Drvr w/ 1.5A
LTC3859AHFE#TRPBF	Analog Devices	L IQ, 3x Out, Buck/Buck/Boost
LTC3891HFE#TRPBF	Analog Devices	L IQ, 60V Sync Buck Cntr
LTC3894HFE#TRPBF	Analog Devices	150V Low IQ Step-Dwn DC/DC Ctl

HFET Price and Stock

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Analog Devices Inc LT8391HFE#TRPBF IC LED DRIVER CTRLR PWM 28TSSOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	LT8391HFE#TRPBF	Reel	4,000		2,000	1 - 10 - 100 - 1000 - 10000 $5.875	Buy Now
Analog Devices Inc LT3012HFE#TRPBF IC REG LIN POS ADJ 200MA 16TSSOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	LT3012HFE#TRPBF	Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $4.1	Buy Now
	LT3012HFE#TRPBF	Cut Tape	1,645		1	1 $9.64 10 $6.683 100 $5.0677 1000 $4.19355 10000 $4.19355	Buy Now
Arrow Electronics	LT3012HFE#TRPBF	Cut Strips	2,307	10 Weeks	1	1 $5.821 10 $5.251 100 $4.504 1000 $4.206 10000 $4.206	Buy Now
Newark	LT3012HFE#TRPBF	Cut Tape	7,334		1	1 $7.5 10 $6.73 100 $5.73 1000 $3.97 10000 $3.87	Buy Now
Bristol Electronics	LT3012HFE#TRPBF		15			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip1Stop	LT3012HFE#TRPBF	Cut Tape	1,910			1 $4.48 10 $4.46 100 $4.36 1000 $4.1 10000 $4.1	Buy Now
Analog Devices Inc LTC3891HFE#TRPBF IC REG CTRLR BUCK 20TSSOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	LTC3891HFE#TRPBF	Cut Tape	2,430		1	1 $14.03 10 $9.963 100 $7.7482 1000 $6.6625 10000 $6.6625	Buy Now
Analog Devices Inc LTC3895HFE#TRPBF IC REG CTRLR BUCK 38TSSOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	LTC3895HFE#TRPBF	Cut Tape	2,257		1	1 $16.72 10 $12.009 100 $9.4481 1000 $8.3375 10000 $8.3375	Buy Now
	LTC3895HFE#TRPBF	Reel	2,000		2,000	1 - 10 - 100 - 1000 - 10000 $8.3375	Buy Now
Mouser Electronics	LTC3895HFE#TRPBF		2,332			1 $15.3 10 $12.01 100 $9.45 1000 $8.34 10000 $8.33	Buy Now
Analog Devices Inc LT8390HFE#TRPBF 60V SYNCHRONOUS 4-SWITCH BUCK-BO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	LT8390HFE#TRPBF	Reel	2,000		2,000	1 - 10 - 100 - 1000 - 10000 $7.875	Buy Now
	LT8390HFE#TRPBF	Cut Tape	1,102		1	1 $15.99 10 $11.45 100 $8.9819 1000 $7.875 10000 $7.875	Buy Now
Verical	LT8390HFE#TRPBF		6,000		2,000	1 - 10 - 100 - 1000 - 10000 $7.693	Buy Now
Arrow Electronics	LT8390HFE#TRPBF		6,000	10 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 $7.693	Buy Now
Chip1Stop	LT8390HFE#TRPBF		6,000			1 - 10 - 100 - 1000 - 10000 $7.693	Buy Now

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HFET Datasheets (7)

Part	Manufacturer	Description	Type	PDF
HFET-1001	Hewlett-Packard	Diode and Transistor Data Book 1980	Scan	PDF
HFET-1101	Hewlett-Packard	Diode and Transistor Data Book 1980	Scan	PDF
HFET-1102	Hewlett-Packard	Diode and Transistor Data Book 1980	Scan	PDF
HFET-2201	Hewlett-Packard	Diode and Transistor Data Book 1980	Scan	PDF
HFET-2202	Hewlett-Packard	Diode and Transistor Data Book 1980	Scan	PDF
HFET2MI	TriQuint Semiconductor	0.5-um HFET 2MI	Original	PDF
HFET-5001	Hewlett-Packard	Diode and Transistor Data Book 1980	Scan	PDF

HFET Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
FP11G Abstract: FP1189-G Text: FP1189 ½-Watt HFET Product Features Product Description Functional Diagram 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years The FP1189 is a high performance ½-Watt HFET	Original	PDF	FP1189 OT-89 FP1189 FP11G FP1189-G
CGD942C Abstract: No abstract text available Text: CGD942C 870 MHz, 23 dB gain power doubler amplifier Rev. 01 — 7 June 2007 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero Field Effect Transistor (HFET) GaAs dies.	Original	PDF	CGD942C OT115J CGD942C
4202 BD TRANSISTOR Abstract: 4202 BD TRANSISTOR parameter BV 501 TGF4230 TGF4230-EEU bond wire gold Text: T R I Q U I N T S E M TGF4230-EEU I C O N D U C 1.2mm Discrete HFET ● ● ● ● ● ● 1200 µm X 0.5 µm HFET T O R , I N C . 4230 Nominal Pout of 28.5- dBm at 8.5- GHz Nominal Gain of 10.0- dB at 8.5- GHz Nominal PAE of 55% at 8.5 - GHz Suitable for High-Reliability Applications	Original	PDF	TGF4230-EEU TGF4230 TGF4230s 4202 BD TRANSISTOR 4202 BD TRANSISTOR parameter BV 501 TGF4230-EEU bond wire gold
ku vsat amplifier Abstract: "ku band" amplifier TGA1045-EPU Text: Advance Product Information Ku Band Power Amplifier TGA1045-EPU Key Features and Performance Primary Applications • • • • • • Ku band Satellite Ground Terminal • VSAT • Point-to-Point Radio HFET Technology 12.5 -15.5 GHz Frequency Range > 3W Nominal Pout	Original	PDF	TGA1045-EPU ku vsat amplifier "ku band" amplifier TGA1045-EPU
VP 1176 datasheet Abstract: LD 757 ps TGF4250-EEU 3 DG 1008 Text: T R I Q U I N T S E M TGF4250-EEU I C O N D U C 4.8 mm Discr ete HFET ● ● ● ● ● ● 4800 µm x 0.5 µm HFET T O R , I N C . 4250 Nominal Pout of 34- dBm at 8.5- GHz Nominal Gain of 8.5- dB at 8.5- GHz Nominal PAE of 53% at 8.5 - GHz Suitable for high reliability applications	Original	PDF	TGF4250-EEU TGF4250-EEU VP 1176 datasheet LD 757 ps 3 DG 1008
Untitled Abstract: No abstract text available Text: CGD942C 870 MHz, 23 dB gain power doubler amplifier Rev. 4 — 25 June 2014 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero Field Effect Transistor (HFET) GaAs dies.	Original	PDF	CGD942C OT115J
CGD1044H Abstract: No abstract text available Text: CGD1044H 1 GHz, 25 dB gain high output power doubler Rev. 3 — 29 September 2010 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero junction Field Effect Transistor (HFET) GaAs dies.	Original	PDF	CGD1044H OT115J CGD1044H
RF transistors with s-parameters Abstract: high power FET transistor s-parameters c4 sot-89 4C922 LL1608-FH3N3S FP1189-PCB-900 Text: FP1189 The Communications Edge TM Preliminary Product Information ½ Watt HFET Product Features • 50 – 4000 MHz • Up to +27 dBm P1dB • Up to +40 dBm Output IP3 • High Drain Efficiency • 19 dB Gain @ 900 MHz • MTBF >100 Years • SOT-89 SMT Package	Original	PDF	FP1189 OT-89 FP1189 1-800-WJ1-4401 RF transistors with s-parameters high power FET transistor s-parameters c4 sot-89 4C922 LL1608-FH3N3S FP1189-PCB-900
FR4 dielectric constant at 2.4 Ghz Abstract: SHF-0189 S12VS Text: Microstrip Segment Specifications Preliminary Preliminary SHF-0189 DC-3GHz, 0.5 Watt GaAs HFET 900 MHz Application Circuit at 25° C Vds=8V, Idq=100mA Microstrip Segment Specifications Ref. desig. Value Part Number /Style Ref. desig. Value Cd1,8 18 pF RO HM MCH18 series	Original	PDF	SHF-0189 100mA) MCH18 LL1608- FR4 dielectric constant at 2.4 Ghz S12VS
Untitled Abstract: No abstract text available Text: CXG1156K Power Amplifier Module for JCDMA For the availability of this product, please contact the sales office. Description The CXG1156K is the power amplifier module which operates at a single power supply. This IC is designed using the Sony’s original p-Gate HFET process.	Original	PDF	CXG1156K CXG1156K 065cc 15dBm 18dBm: 15dBm: 10PIN 22-R0 LCC-10C-371
Untitled Abstract: No abstract text available Text: CXG1156K Power Amplifier Module for JCDMA Description The CXG1156K is the power amplifier module which operates at a single power supply. This IC is designed using the Sony’s original p-Gate HFET process. 10 pin LCC Ceramic Features • Single power supply operation:	Original	PDF	CXG1156K CXG1156K 065cc 15dBm 18dBm: 15dBm: 900MHz) 10PIN LCC-10C-03
Untitled Abstract: No abstract text available Text: CXG1158K Power Amplifier Module for JCDMA For the availability of this product, please contact the sales office. Description The CXG1158K is the power amplifier module which operates at a single power supply. This IC is designed using the Sony's original p-Gate HFET process.	Original	PDF	CXG1158K CXG1158K 15dBm 18dBm: 15dBm: 10PIN LCC-10C-361
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MMH3111NT1 Rev. 3, 1/2011 Heterostructure Field Effect Transistor GaAs HFET MMH3111NT1 Broadband High Linearity Amplifier The MMH3111NT1 is a General Purpose Amplifier that is internally input and output prematched. It is designed for a broad range of Class A,	Original	PDF	MMH3111NT1 MMH3111NT1
TGF4230-EEU Abstract: No abstract text available Text: Product Data Sheet March 20, 2001 Discrete HFET TGF4230-EEU Key Features and Performance • • • • • • 1200 µm x 0.5 µm HFET Nominal Pout of 28.5 dBm at 8.5 GHz Nominal Gain of 10.0 dB at 8.5 GHz Nominal PAE of 55 % at 8.5 GHz Suitable for high reliability applications	Original	PDF	TGF4230-EEU TGF4230-EEU TGF42

Untitled Abstract: No abstract text available Text: Wideband Power Amplifier Product Features • • • • Operation across 20MHz to 1000MHz 45dBm minimum Psat through all band 34dB typical small signal gain GaN HFET RFW1G33H40-28 Application • HF/VHF/UHF Package : DP-75 Description The RFW1G33H40-28 is designed for Wideband Power Amplifier application frequencies from 20 to 1000MHz.	Original	PDF	20MHz 1000MHz 45dBm RFW1G33H40-28 DP-75 RFW1G33H40-28 1000MHz.
Untitled Abstract: No abstract text available Text: Wideband Power Amplifier Product Features • • • • Operation across 20MHz to 1000MHz 42dBm minimum Psat through all band 35dB typical small signal gain GaN HFET RFW1G35H20-28 Application • HF/VHF/UHF Package : DP-75 Description The RFW1G35H20-28 is designed for Wideband Power Amplifier application frequencies from 20 to 1000MHz.	Original	PDF	20MHz 1000MHz 42dBm RFW1G35H20-28 DP-75 RFW1G35H20-28 1000MHz. DP-75)
10PIN Abstract: CXG1158K Text: CXG1158K Power Amplifier Module for JCDMA Description The CXG1158K is the power amplifier module which operates at a single power supply. This IC is designed using the Sony's original p-Gate HFET process. 10 pin LCC Ceramic Features • Single power supply operation:	Original	PDF	CXG1158K CXG1158K 15dBm 18dBm: 15dBm: 900MHz) LCC-10C-361 10PIN
CGY1047 Abstract: No abstract text available Text: CGY1047 1 GHz, 27 dB gain GaAs push-pull amplifier Rev. 01 — 30 July 2009 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current DC , employing Heterojunction Field Effect Transistor (HFET) GaAs dies.	Original	PDF	CGY1047 OT115J 2002/95/EC, CGY1047
FR4 dielectric constant 4.6 Abstract: CD268 SHF-0289 Stanford SHF-0289 SHF 189 MCH18 822 a b Text: Preliminary Preliminary Product Description SHF-0289 Stanford Microdevices’ SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added	Original	PDF	SHF-0289 SHF-0289 30dBm 250mA. EDS-101241 FR4 dielectric constant 4.6 CD268 Stanford SHF-0289 SHF 189 MCH18 822 a b
Untitled Abstract: No abstract text available Text: H I U I N S E M I C O N D U C T O R , T IQSt 9.6mm Discrete HFET TGF4260-EPU 9600 pm x 0.5 pm Nominal Pout of 37-dBm at 6.0 GHz Nominal Gain of 9.5-dB at 6.0 GHz # Nominal PAE of 52% at 6.0 GHz % Suitable for high reliability applications # 0,572 x 2,324 x 0,102 mm	OCR Scan	PDF	TGF4260-EPU 37-dBm
Untitled Abstract: No abstract text available Text: Stanford Microdevices Product Description SHF-0186 Stanford M icrodevices’ SHF-0186 is a AIG aAs/GaAs Heterostructure FET housed in a low cost surface-m ount plastic package. HFET technology im proves breakdown voltage for high drain voltage operation. Its low Schottky	OCR Scan	PDF	SHF-0186 SHF-0186 DC-12 SHF-0186-TR3 SHF-0186-TR1 SHF-0186-TR2
Untitled Abstract: No abstract text available Text: Stanford Microdevices Product Description SHF-0598 Stanford M icrodevices’ SHF-0598 series is a AI/GaAs/ GaAs Heterostructure FET housed in a low-cost ceram icmount ceram ic package. HFET technology im proves breakdown voltage for high drain voltage operation. Its	OCR Scan	PDF	SHF-0598 SHF-0598 33dBm 30dBm
Untitled Abstract: No abstract text available Text: TGF4118-EPU 18 mm Discrete HFET 4118 0.5 um gate finger length Nominal Pout of 9.0 Watts at 2.3 GHz Nominal PAE of 53% at 2.3 GHz Nominal Gain of 11.5 dB at 2.3 GHz Die Size 36.0 x 81.0 x 4.0 mils 0.914 x 2.057 x 0.102 mm TGF4118-EPU RF Performance at F = 2.3 GHz	OCR Scan	PDF	TGF4118-EPU TGF4118-EPU
2SA1247 Abstract: 2SC3115 Gv-80 Text: NEC Y S ilico n T ra n s is to r '> ‘J =3 > m = F = r i\ r x 2SA1247 P # N P b i + ! mm « OiB, ISffiXr 1 / i « 3 y h n —; u r >7— T v-?<r> m ìa i t lT s a -c -fo o aitl±, /J'#!:, B hFEt£<T)X’MiàfS?â5c#14io t <"ti tz r -i -f-1 •v9u> : -120	OCR Scan	PDF	2SA1247 2SC31151 2SA1247 2SC3115 Gv-80

HFET Search Results

HFET Result Highlights (5)

HFET Price and Stock

Analog Devices Inc LT8391HFE#TRPBF

Analog Devices Inc LT3012HFE#TRPBF

Analog Devices Inc LTC3891HFE#TRPBF

Analog Devices Inc LTC3895HFE#TRPBF

Analog Devices Inc LT8390HFE#TRPBF

HFET Datasheets (7)

HFET Datasheets Context Search

FP11G

CGD942C

4202 BD TRANSISTOR

ku vsat amplifier

VP 1176 datasheet

Untitled

CGD1044H

RF transistors with s-parameters

FR4 dielectric constant at 2.4 Ghz

Untitled

Untitled

Untitled

Untitled

TGF4230-EEU

Untitled

Untitled

10PIN

CGY1047

FR4 dielectric constant 4.6

Untitled

Untitled

Untitled

Untitled

2SA1247