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    2N512B Price and Stock

    Susumu Co Ltd RG2012N-512-B-T1

    RES SMD 5.1K OHM 0.1% 1/8W 0805
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    DigiKey RG2012N-512-B-T1 Reel 1,000
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    Susumu Co Ltd RG2012N-512-B-T5

    RES SMD 5.1K OHM 0.1% 1/8W 0805
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    DigiKey RG2012N-512-B-T5 Reel 5,000
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    Mouser Electronics RG2012N-512-B-T5
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    TechNexion PICOIMX6G205R512N512BW

    System-On-Modules - SOM PICO SOM NXP I.MX6 ULTRALITE 528MHZ + 512MB DDR3L + 512MB NAND + 802.11AC + BLUETOOTH 4.0
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    Mouser Electronics PICOIMX6G205R512N512BW
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    TechNexion PICOIMX6G205R512N512BWTE

    System-On-Modules - SOM PICO SOM NXP I.MX6 ULTRALITE 528MHZ + 512MB DDR3L + 512MB NAND + 802.11AC + BLUETOOTH 4.0 EXTENDED TEMP -20~70C
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    Mouser Electronics PICOIMX6G205R512N512BWTE
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    UNKNOWN NAS1352N5-12B

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    Bisco Industries NAS1352N5-12B 170
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    2N512B Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N512B Germanium Power Devices Germanium Power Transistors Scan PDF
    2N512B Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N512B Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N512B Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N512B Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N512B Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N512B Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N512B Unknown Vintage Transistor Datasheets Scan PDF
    2N512B Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N512B Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N512B Semitron Germanium Power Transistors Scan PDF
    2N512B Solidev Semiconductors Solid State Products (Transistor Guide) Scan PDF
    2N512B Texas Instruments Semiconductor and Components Data Book 1967/8 Scan PDF

    2N512B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    pnp germanium to36

    Abstract: MP2400B 2N575A 2N5694 2N2156 2N575 2N1518 2N2728 TO36 package germanium
    Text: POWER GERMANIUM PNP Item Number Part Number I C - -10 6~~~ - MP110B 2N1166 2N1167 SDG606 MP1077 2N1166A 2N1167A 2N575 15 20 - ~~:gA 25 30 2N575A 2N514A NKT501 NKT503 2N1519 ADY26 ADY26 COTt076 ~~~g~~ -35 40 2N2638 CTP3545 MP2100A MP2100A MP2100B SOO607 2N1652


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    2N2728 MP2357 2N2357 2N1522 2N1523 MP2358 pnp germanium to36 MP2400B 2N575A 2N5694 2N2156 2N575 2N1518 TO36 package germanium PDF

    2N512

    Abstract: Texas Germanium 2N512B 5 amp germanium pnp Germanium Amplifier Germanium Transistor GERMANIUM PNP LOW POWER TRANSISTORS 2N512A Germanium power
    Text: TYPES 2N512, 2N512A, AND 2N512B P-N-P ALLOY-JUNCTION GERMANIUM HIGH-POWER TRANSISTORS T Y P E S 2N 512, 2 N 512A , and 2 N 5 1 2 B B U L L E T IN NO. DL-S 611472, MARCH 4 0 , 60, or 80 VOLTS 15-Amp Collector Current 150-Watt Dissipation LOW lco LOW VK LOW THERMAL RESISTANCE


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    2N512, 2N512A, 2N512B 15-Amp 150-Watt 7S222 2N512 Texas Germanium 5 amp germanium pnp Germanium Amplifier Germanium Transistor GERMANIUM PNP LOW POWER TRANSISTORS 2N512A Germanium power PDF

    2N1143

    Abstract: 2N1142 TI3030 TI3028 2N1141 TI3027 TI3031 2N458A germanium transistors PNP 2N455A
    Text: Germanium Transistors Type Case C o Maxim um R atings at 25°C amb. C haracteristics S P E C IA L 11 No. « a> o » O FE A TU R ES A - > ,- V CB V CE V EB V V V •c A Ptot W fc A h FE a Min. fT Max. V C E (S A T A -1 r 1-


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    2N524 2N525 2N526 2N527 2N1141 2N1142 2N1143 2N456A TI3030 TI3031 TI3028 TI3027 2N458A germanium transistors PNP 2N455A PDF

    TFK 404

    Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
    Text: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317


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    20nttc* 10N12* TFK 404 T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09 PDF

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29 PDF

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


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    2n189

    Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
    Text: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits


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    2G101* 2G102* 2G103* 2G109 2G220 2G221 2G222 2G223 2G224 2n189 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152 PDF

    2N65s

    Abstract: 2n907 2N936 2N797 2N706 2N906 2N777 2N945 2N964 2N555
    Text: DIGITRÔN ELECTRONIC CORP 3bE D • 2ñ4St.D7 OOGOOGS 7 ■ • qj DGE'-p Page t,6Î - DIQITRON ELECTRONIC« #2 CORE 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 Fax J O H N J. S C H W A R T Z


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    204EbD7 2N497AI 2N539 2N696A 2N728 2N871 2N922 2N498 2N539A 2N697 2N65s 2n907 2N936 2N797 2N706 2N906 2N777 2N945 2N964 2N555 PDF

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680 PDF

    transistor 2N4

    Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
    Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION


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    TO36

    Abstract: 2N511 TO41 2N1560 2N2075 2N1556A 2N1554 2N1519 2N1558 2n1980
    Text: GERMANIUM POWER TRANSISTORS CURRENT G A IN Type Number Case Type VcBO y ^CEO y ^EBO V Y ce . V hFE VcES y Min. Vçe Max. @ y h A SA TU R A TIO N VOLTAGES Vc£lai ¡ e @ lg y y A A 8 / .c ° c /w 15 AMP GERMANIUM PNP Cont. 20.0 30.0 30.0 40.0 40.0 30 45 45


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    2N1553A 2N1554 2N1554A 2N1555 2N1555A 2N1556 2N1556A 2N1557 MT-36 8-32NC-2A TO36 2N511 TO41 2N1560 2N2075 2N1519 2N1558 2n1980 PDF

    3N50

    Abstract: 2N1167A 2N2081 SDG603 2N2078 2N2286 2N2285 2N2287 2N2636 2N511
    Text: 57 GERMANIUM POWER TRANSISTORS SA T U R A T IO r vl V O L T A G E S CURREIV IT G A IN @ T Y PE N U M B ER C ASE TYPE V CBO V V CEO V V EBO v V C ER V V C ES V hl:E MIN. M AX. V CE V I *C A V CE s V BE(s) V I V 'C A I >B A 15 AMP GE 3MAIM UM PIMP Observe (—) Negative Polarity


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    2N2077 2N2078 2N2079 2N2080 2N2082 2N2612 2N2077 2N2078 2N2079 2N2080 3N50 2N1167A 2N2081 SDG603 2N2286 2N2285 2N2287 2N2636 2N511 PDF

    2N3614

    Abstract: 2N173 2N441 2N1553 2N1560 2N511B 2N669 2N511 2N3312 1534a
    Text: . •■_ m Môb^EMb 0 00 0 21 3 0 H 7 ^ ;3 3 " ° ¡ J E iT lltrO n SEMICONDUCTORS SemitronicsCorp. IN TEX/ SEN IT RO N IC S CORP 27E D germanium transistors cont’d germanium power transistors T»P» Polarity Power Dissipation


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    2N155 2N156 2N158 2N158A 2N173 T0-13 2N174 2N176 2N234A 2N3614 2N441 2N1553 2N1560 2N511B 2N669 2N511 2N3312 1534a PDF

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    2N3303

    Abstract: T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175
    Text: Semiconductor Components Data Book 4 Transistors C o p y rig h t 1971 by T exas In s tru m e n ts L im ited . A ll R ig h ts R eserv ed . P rin te d in th e U n ite d K ingdom . T his b o o k , o r p arts th e re o f, m ay n o t be rep ro d u ce d in any


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    Chiana56 2N3303 T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175 PDF

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    2N1560

    Abstract: 2N1982 2N2075 2N2081 2N511 TO41 2N511B TO36 3N50 2N1557
    Text: GERMANIUM POWER TRANSISTORS Type Number Case | Type Vcao y yceo y ytuo y VCES VCE, y V CURRENT GAIN Min. Max. V h FE V CE @ SATURATION VOLTAGES .] Ic @ Iß y y A A A Yctti Iç Bj.c °c/w 15 AMP GERMANIUM PNP (Cont.) 20.0 30.0 30.0 40.0 40.0 30 45 45 60 60


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    2N1553A 2N1554 2N1554A 2N1555 2N1555A 2N1556 2N1556A 2N1557 NS257 T0-18 2N1560 2N1982 2N2075 2N2081 2N511 TO41 2N511B TO36 3N50 PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 PDF

    3TE445

    Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
    Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group


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    FJJ141/A 2305D FJJ181/A 2305E/848 FJJ191/A FJL101/A CD2306D FJY101/A 2306E/832 CD2307/944 3TE445 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159 PDF

    TO41

    Abstract: TO36 Germanium Power Transistors Germanium Power Devices 2N1554 2N1554A 2N1555 2N1555A 2N1556 2N1557
    Text: GERMANIUM POWER TRANSISTORS Type Number | Case Type Vcao y y ceo y y tuo y VCES y VCE, V CURRENT G A IN hFE VCE @ Iç Min. Max. V A SA TU R A TIO N VOLTAGES Yctti .] / c @ Ib y y A A Bj.c ° c /w 15 AMP GERMANIUM PNP (Cont.) 20.0 30.0 30.0 40.0 40.0 30 45


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    2N1553A 2N1554 2N1554A 2N1555 2N1555A 2N1556 2N1556A 2N1557 2N1557A 40rmanium TO41 TO36 Germanium Power Transistors Germanium Power Devices PDF

    2N236A

    Abstract: 2N458 2N554 2N2148 2N511 2n418 2N1203 2N3614 2n1021 2N214
    Text: . • ■ _ m M ô b^ EM b 0 0 0 0 2 1 3 0 H 7^;33" ° ¡ J E iT lltrO n SEMICONDUCTORS IN TE X/ S E N I T R O N I C S CORP S e m it r o n ic s C o r p . 27E D germanium transistors cont’d germ anium power transistors T»P» Polarity Power


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    2N155 2N156 2N158 2N158A 2N173 T0-13 2N174 2N176 2N234A 2N236A 2N458 2N554 2N2148 2N511 2n418 2N1203 2N3614 2n1021 2N214 PDF

    2N1227

    Abstract: 2M214 2N1202 1j63 2N2148 2NS40 2N511 2N176 2N236A 2N420
    Text: . •■_ m Môb^EMb 0 0 0 0 2 1 3 0 H 7 ^ ;3 3 " ° ¡ JE iT lltrO n SEMICONDUCTORS SemitronicsCorp. INTEX/ SENITRONICS CORP 27E D germanium transistors cont’d germ anium power transistors T»P» Polarity Power D issipation


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    2N155 2N156 2N158 2N158A 2N173 T0-13 2N174 2N176 2N234A 2N1227 2M214 2N1202 1j63 2N2148 2NS40 2N511 2N236A 2N420 PDF