DG9431
Abstract: DG9431DV-T1 DG9431DY-T1 HP4192A
Text: DG9431 Vishay Siliconix Low-Voltage Single SPDT Analog Switch FEATURES BENEFITS D Low Voltage Operation +2.7 Available to +5 V D Low On-Resistance - rDS(on): 20 W D Fast Switching - tON : 35 ns, tOFF: 20 ns D Low Leakage - ICOM(on): 200-pA max D Low Charge Injection - QINJ: 1 pC
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DG9431
200-pA
HP4192A
S-50694--Rev.
18-Apr-05
DG9431
DG9431DV-T1
DG9431DY-T1
HP4192A
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Si3458DV-T1
Abstract: Si3458DV
Text: Si3458DV Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) 60 FEATURES rDS(on) (W) ID (A) 0.10 @ VGS = 10 V 3.2 0.13 @ VGS = 4.5 V 2.8 D TrenchFETr Power MOSFET D 100% Rg Tested D Lead (Pb)-Free Version is RoHS Compliant (1, 2, 5, 6) D TSOP-6
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Si3458DV
Si3458DV-T1
Si3458DV-T1--E3
08-Apr-05
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Si5904DC
Abstract: Si5904DC-T1
Text: Si5904DC Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.075 @ VGS = 4.5 V "4.2 0.134 @ VGS = 2.5 V "3.1 D TrenchFETr Power MOSFET D 2.5-V Rated D Lead (Pb)-Free Version is RoHS Compliant Available
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Si5904DC
Si5904DC-T1
Si5904DC-T1--E3
08-Apr-05
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Si2301
Abstract: Si2301BDS Si2301BDS-T1 Si2301BDS SPICE Device Model
Text: Si2301BDS Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.100 @ VGS = −4.5 V −2.4 0.150 @ VGS = −2.5 V −2.0 VDS (V) −20 20 D RoH Lead (Pb)-Free Version is RoHS Compliant Available TO-236 (SOT-23) G 1 3
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Si2301BDS
O-236
OT-23)
Si2301BDS-T1
Si2301BDS-T1--E3
Si2301
S-50694--Rev.
18-Apr-05
Si2301BDS SPICE Device Model
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SI4435BDY-T1
Abstract: Si4435BDY
Text: Si4435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.020 @ VGS = −10 V −9.1 0.035 @ VGS = −4.5 V −6.9 D TrenchFETr Power MOSFET D Advanced High Cell Density Process D Lead (Pb)-Free Version is RoHS
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Si4435BDY
Si4435BDY-T1
Si4435BDY-T1--E3
08-Apr-05
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Si7409DN
Abstract: Si7409DN-T1
Text: Si7409DN Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.019 @ VGS = −4.5 V −11 0.031 @ VGS = −2.5 V −8.5 Qg (Typ) 25 D TrenchFETr Power MOSFET Available D New Low Thermal Resistance PowerPAKrPackage with Low 1.07-mm Profile
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Si7409DN
07-mm
Si7409DN-T1
Si7409DN-T1--E3
18-Jul-08
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Si7403BDN
Abstract: No abstract text available
Text: SPICE Device Model Si7403BDN Vishay Siliconix P-Channel 20V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7403BDN
18-Jul-08
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Si7682DP
Abstract: No abstract text available
Text: SPICE Device Model Si7682DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7682DP
18-Jul-08
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SI3455DV-T1
Abstract: Si3455DV
Text: Si3455DV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 30 rDS(on) (W) ID (A) 0.100 @ VGS = −10 V "3.5 0.190 @ VGS = −4.5 V "2.5 D TrenchFETr Power MOSFET D Lead (Pb)-Free Version is RoHS Compliant Available (4) S TSOP-6
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Si3455DV
Si3455DV-T1
Si3455DV-T1--E3
18-Jul-08
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Si4936DY
Abstract: Si4936DY-T1
Text: Si4936DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.037 @ VGS = 10 V 5.8 0.055 @ VGS = 4.5 V 4.7 D TrenchFETr Power MOSFET D Lead (Pb)-Free Version is RoHS Compliant D1 SO-8 S1 1 8 D1 G1 2 7 D1
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Si4936DY
Si4936DY-T1
Si4936DY-T1--E3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si4936ADY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.036 @ VGS = 10 V 5.9 0.053 @ VGS = 4.5 V 4.9 D TrenchFETr Power MOSFET D Lead (Pb)-Free Version is RoHS Compliant D1 Available D2 SO-8 S1 1
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Si4936ADY
Si4936ADY-T1
Si4936ADY-T1--E3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si4463DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES rDS(on) (W) ID (A) 0.014 @ VGS = −4.5 V −13 0.020 @ VGS = −2.5 V −11 D Lead (Pb)-Free Version is RoHS Compliant Available S SO-8 S 1 8 D S 2 7 D S 3 6 D G
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Si4463DY
Si4463DY-T1
Si4463DY-T1--E3
S-50694--Rev.
18-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si3455DV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 30 rDS(on) (W) ID (A) 0.100 @ VGS = −10 V "3.5 0.190 @ VGS = −4.5 V "2.5 D TrenchFETr Power MOSFET D Lead (Pb)-Free Version is RoHS Compliant Available (4) S TSOP-6
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Si3455DV
Si3455DV-T1
Si3455DV-T1--E3
S-50694--Rev.
18-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si7409DN Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.019 @ VGS = −4.5 V −11 0.031 @ VGS = −2.5 V −8.5 Qg (Typ) 25 D TrenchFETr Power MOSFET Available D New Low Thermal Resistance PowerPAKrPackage with Low 1.07-mm Profile
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Si7409DN
07-mm
Si7409DN-T1
Si7409DN-T1--E3
S-50695--Rev.
18-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si7415DN Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −60 rDS(on) (W) ID (A) 0.065 @ VGS = −10 V −5.7 0.110 @ VGS = −4.5 V −4.4 D TrenchFETr Power MOSFET D New PowerPAKr Package Available − Low Thermal Resistance, RthJC
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Si7415DN
07-mm
Si7415DN-T1
Si7415DN-T1--E3
S-50695--Rev.
18-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.025 @ VGS = 4.5 V "7.1 0.035 @ VGS = 2.5 V "6.0 D TrenchFETr Power MOSFET D 2.5-V Rated D Lead (Pb)-Free Version is RoHS Compliant D1 SO-8
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Si4966DY
Si4966DY-T1
Si4966DY-T1--E3
S-50695--Rev.
18-Apr-05
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71247
Abstract: SI4404DY
Text: Si4404DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0065 @ VGS = 10 V 23 0.008 @ VGS = 4.5 V 17 D TrenchFETr Power MOSFET D 100% Rg Tested D Lead (Pb)-Free Version is RoHS Compliant D SO-8 S 1 8 D
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Si4404DY
Si4404DY-T1
Si4404DY-T1--E3
S-50694--Rev.
18-Apr-05
71247
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Untitled
Abstract: No abstract text available
Text: Si4963DY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.033 @ VGS = −4.5 V −6.2 0.050 @ VGS = −2.5 V −5 D TrenchFETr Power MOSFET D Lead (Pb)-Free Version is RoHS Compliant S1 Available
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Si4963DY
Si4963DY-T1
Si4963DY-T1--E3
S-50695--Rev.
18-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si4936DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.037 @ VGS = 10 V 5.8 0.055 @ VGS = 4.5 V 4.7 D TrenchFETr Power MOSFET D Lead (Pb)-Free Version is RoHS Compliant D1 SO-8 S1 1 8 D1 G1 2 7 D1
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Si4936DY
Si4936DY-T1
Si4936DY-T1--E3
S-50695--Rev.
18-Apr-05
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Untitled
Abstract: No abstract text available
Text: SiP21103 Vishay Siliconix New Product 250-mA Ultra Low-Noise LDO Regulator With Discharge Option FEATURES D D D D D D D D D D D D D Ultra Low Dropout—250 mV at 250-mA Load Ultra Low Noise—30 mVRMS 10-Hz to 100-kHz Shutdown Control 130-mA Ground Current at 250-mA Load
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SiP21103
250-mA
Dropout--250
Noise--30
10-Hz
100-kHz)
130-mA
400-mA
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Si6874EDQ
Abstract: No abstract text available
Text: Si6874EDQ Vishay Siliconix Dual N-Channel 20-V D-S MOSFET, Common Drain FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.026 @ VGS = 4.5 V 6.5 0.031 @ VGS = 2.5 V 5.8 0.039 @ VGS = 1.8 V 5.0 D 3000-V ESD Protection D Lead (Pb)-Free Version is RoHS
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Si6874EDQ
000-V
Si6874EDQ-T1
Si6874EDQ-T1--E3
S-50695--Rev.
18-Apr-05
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609-2641 connector
Abstract: 609-5041 609-2041 609-2641 1658526-2 tyco ipm
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. DIST REVISIONS GP 00 LTR B DATE DWN APVD 18APR05 sw JG DESCRIPTION REVISED PER EC 0 S 1 3 - 0 1 17-05 1. 20 POSITION CONNECTOR ASSEMBLY SHOWN,
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0S13-0117-05
18APR05
UL94V-0
305EP03
30SEP03
31MAR2000
609-2641 connector
609-5041
609-2041
609-2641
1658526-2
tyco ipm
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Untitled
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST AD 25 R E V IS IO N S LTR 01 85.29 [3.358]' HOUSING -0.94+0.05 TYP [.037+.002] 1-2.41 - - 0.08 0 . 1 .095 + .003 -.004
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18APR05
18APR05
31MAR2000
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Untitled
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST AD 25 R E VIS IO N S LTR 01 54.36[2.140] DESCRIPTION REVISED PER E C O - 0 7 - 01 281 9 DATE DWN APVD 2 7 JU N 07 DH
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31MAR2000
S077239
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