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    SI4463DY Price and Stock

    onsemi SI4463DY

    SO8 SINGLE N-CH 20V - Bulk (Alt: SI4463DY)
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    Avnet Americas SI4463DY Bulk 4 Weeks 472
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    Vishay Intertechnologies SI4463DY

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    Bristol Electronics SI4463DY 7,681
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    Quest Components SI4463DY 950
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    Vishay Intertechnologies SI4463DY-T1

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    Bristol Electronics SI4463DY-T1 6,814
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    SI4463DY-T1 3,667
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    Quest Components SI4463DY-T1 2,933
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    SI4463DY-T1 1,467
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    SI4463DY-T1 256
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    Vishay Siliconix SI4463DY

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    Bristol Electronics SI4463DY 5,644
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    Quest Components SI4463DY 10
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    Velocity Electronics SI4463DY 143
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    Vishay Siliconix SI4463DY-T1

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    Bristol Electronics SI4463DY-T1 5,644
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    Quest Components SI4463DY-T1 1,902
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    SI4463DY-T1 52
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    Find more SI4463DY price and stock on Findchips.com

    SI4463DY Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI4463DY Fairchild Semiconductor P-Channel 2.5V Specified PowerTrench MOSFET Original PDF
    Si4463DY Fairchild Semiconductor P-Channel 2.5V Specified PowerTrench MOSFET Original PDF
    Si4463DY Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SI4463DY Vishay P-Channel 2.5-V (G-S) MOSFET Original PDF
    SI4463DY Siliconix Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, P-Channel, -20V, Single, Pkg Style SO-8 Scan PDF
    SI4463DY_NL Fairchild Semiconductor P-Channel 2.5V Specified PowerTrench MOSFET Original PDF
    Si4463DY SPICE Device Model Vishay P-Channel 2.5-V (G-S) MOSFET Original PDF
    SI4463DY-T1 Vishay Intertechnology P-Channel 2.5-V (G-S) Rated MOSFET Original PDF

    SI4463DY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NS4160

    Abstract: Si4463DY 4463 SO-8 4463 SO8 MOSFET
    Text: Si4463DY P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V – 12V .


    Original     		PDF Si4463DY NS4160 4463 SO-8 4463 SO8 MOSFET

    4463 SO8 MOSFET

    Abstract: 4463 B
    Text: Si4463DY P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V – 12V .


    Original     		PDF Si4463DY 4463 SO8 MOSFET 4463 B

    Untitled

    Abstract: No abstract text available
    Text: Si4463DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) –20 ID (A) 0.014 @ VGS = –4.5 V "10 0.0200 @ VGS = –2.5 V "8.8 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4463DY S-51654--Rev. 21-Apr-97

    Si4463DY

    Abstract: 70707
    Text: Si4463DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) –20 ID (A) 0.014 @ VGS = –4.5 V "10 0.0200 @ VGS = –2.5 V "8.8 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4463DY 18-Jul-08 70707

    Untitled

    Abstract: No abstract text available
    Text: Si4463DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES rDS(on) (W) ID (A) 0.014 @ VGS = −4.5 V −13 0.020 @ VGS = −2.5 V −11 D Lead (Pb)-Free Version is RoHS Compliant Available S SO-8 S 1 8 D S 2 7 D S 3 6 D G


    Original     		PDF Si4463DY Si4463DY-T1 Si4463DY-T1--E3 S-50694--Rev. 18-Apr-05

    PF7000

    Abstract: No abstract text available
    Text: Si4463DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) –20 ID (A) 0.014 @ VGS = –4.5 V "10 0.0200 @ VGS = –2.5 V "8.8 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4463DY 08-Apr-05 PF7000

    Si4463DY

    Abstract: No abstract text available
    Text: Si4463DY Vishay Siliconix P-Channel 2.5-V G–S MOSFET PRODUCT SUMMARY VDS (V) RDS(ON) (W) –20 ID (A) 0.014 @ VGS = –4.5 V "10 0.0200 @ VGS = –2.5 V "8.8 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4463DY S-51654--Rev. 21-Apr-97

    Si4463DY

    Abstract: No abstract text available
    Text: Si4463DY New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.014 @ VGS = - 4.5 V - 13 0.020 @ VGS = - 2.5 V - 11 - 20 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4463DY S-20117--Rev. 11-Mar-02

    Si4463DY

    Abstract: 52525rev Si4463DY SPICE Device Model
    Text: SPICE Device Model Si4463DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4463DY S-52525Rev. 12-Dec-05 52525rev Si4463DY SPICE Device Model

    Si4463DY

    Abstract: Si4463DY-T1 SI4463DY-T1-E3
    Text: Si4463DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES rDS(on) (W) ID (A) 0.014 @ VGS = −4.5 V −13 0.020 @ VGS = −2.5 V −11 D Lead (Pb)-Free Version is RoHS Compliant Available S SO-8 S 1 8 D S 2 7 D S 3 6 D G


    Original     		PDF Si4463DY Si4463DY-T1 Si4463DY-T1--E3 18-Jul-08 SI4463DY-T1-E3

    Si4463DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4463DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4463DY 18-Jul-08

    SI4463DY-T1

    Abstract: No abstract text available
    Text: Si4463DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.014 @ VGS = - 4.5 V - 13 0.020 @ VGS = - 2.5 V - 11 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D Ordering Information: Si4463DY Si4463DY-T1 (with Tape and Reel)


    Original     		PDF Si4463DY Si4463DY-T1 S-31990--Rev. 13-Oct-03

    mosfet p-channel 10A

    Abstract: Si4463DY
    Text: SPICE Device Model Si4463DY P-Channel 2.5-V G-S Rated MOSFET Characteristics • P-channel Vertical DMOS • Macro-Model (Subcircuit) • Level 3 MOS • Applicable for Both Linear and Switchmode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse


    Original     		PDF Si4463DY mosfet p-channel 10A

    AN609

    Abstract: Si4463DY
    Text: Si4463DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4463DY AN609 31-Aug-05

    Si4463DY

    Abstract: Si4463DY-T1 Si4463DY-T1-E3
    Text: Si4463DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES rDS(on) (W) ID (A) 0.014 @ VGS = −4.5 V −13 0.020 @ VGS = −2.5 V −11 D Lead (Pb)-Free Version is RoHS Compliant Available S SO-8 S 1 8 D S 2 7 D S 3 6 D G


    Original     		PDF Si4463DY Si4463DY-T1 Si4463DY-T1--E3 08-Apr-05 Si4463DY-T1-E3

    Si4463DY

    Abstract: No abstract text available
    Text: Si4463DY P-Channel 2.5-V G–S Rated MOSFET Product Summary VDS (V) –20 rDS(on) (W) ID (A) 0.014 @ VGS = –4.5 V "10 0.0200 @ VGS = –2.5 V "8.8 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4463DY S-51654--Rev. 21-Apr-97

    Si4463DY

    Abstract: No abstract text available
    Text: Si4463DY P-Channel 2.5-V G–S Rated MOSFET Product Summary VDS (V) –20 rDS(on) (W) ID (A) 0.014 @ VGS = –4.5 V "10 0.0200 @ VGS = –2.5 V "8.8 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4463DY S-51654--Rev. 21-Apr-97

    Si4463DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4463DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4463DY 17-Apr-01

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original     		PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS

    zeta converter its applications

    Abstract: 6TPB150M sanyo bh510 converter zeta 6TPB150M SANYO POSCAP 1N4148 EEFUE0G181R LTC1622 MBRD835L
    Text: advertisement Low Dropout 550kHz DC/DC Controller Operates from Inputs as Low as 2V – Design Note 208 San Hwa Chee The LTC 1622 is a versatile high efficiency step-down controller that easily meets the size requirements of handheld portable applications with its small MSOP package. High frequency of operation 550kHz allows the use


    Original     		PDF 550kHz 550kHz) LTC1622 750kHz. DN208 700mA 50mV/DIV 700mA) zeta converter its applications 6TPB150M sanyo bh510 converter zeta 6TPB150M SANYO POSCAP 1N4148 EEFUE0G181R MBRD835L

    J122

    Abstract: j3305 J122 transistor transistor j122 J380 motorola g24 motorola J122 R747 diode s m r707 C143 T transistor
    Text: Technical Information M OTOROLA G24 D EVELOPER ’S G UIDE D EVELOPER ’ S K IT ENGLISH JANUARY 31, 2007 6889192V26-E MRC Components OHG, Ob. Domberggasse 7, D-85354 Freising Tel. +49-8161-9848-0, Fax +49-8161-9848-20 E-mail: info@mrccomponents.de Web: www.mrccomponents.de


    Original     		PDF 6889192V26-E D-85354 6889192V26@ 6889192V26 J122 j3305 J122 transistor transistor j122 J380 motorola g24 motorola J122 R747 diode s m r707 C143 T transistor

    motorola g24

    Abstract: 2SSA-3.0-S-05 g24 motorola module motorola D102 user guide D SUB connector ITT Cannon C143 E S S transistor gsm booster circuit gsm signal Booster 85 SMA-50-0-144 MAC8 Series 2SSA-3.0-S-05
    Text: Technical Information M OTOROLA G24 D EVELOPER ’ S G UIDE D EVELOPER ’S K IT ENGLISH JANUARY 1, 2006 6889192V26-A MRC Components OHG, Ob. Domberggasse 7, D-85354 Freising Tel. +49-8161-9848-0, Fax +49-8161-9848-20 E-mail: info@mrccomponents.de Web: www.mrccomponents.de


    Original     		PDF 6889192V26-A D-85354 6889192V26@ 6889192V26 motorola g24 2SSA-3.0-S-05 g24 motorola module motorola D102 user guide D SUB connector ITT Cannon C143 E S S transistor gsm booster circuit gsm signal Booster 85 SMA-50-0-144 MAC8 Series 2SSA-3.0-S-05

    tp181

    Abstract: toshiba hdd schematic board cbf 493 TP223 mt2 tEac CBF 423 diode ba39 toshiba 1,8 hdd schematic board TP182 keyboard and touchpad schematic
    Text: 4-148 KBC3_SUSPWR 1% R11 10K 1% R18 6.65K P1.5V_AUX VDC C20 10nF TP192 TP193 R7 TP? 2.5V AL C6 330uF 7 6 5 TP194 Q57 SI4816DY IHLP-2525CZ-01 L1 4.7uH 25V C14 4700nF 3 8 2 D1 4 G2 1 G1 TP217 TP216 R1 1K TP196 25V C15 220nF TP191 5% TP190 R17 6.8K 1% R15 330K


    Original     		PDF 4700nF TP197 TP208 TP198 220nF ISL6225CA-T TP199 tp181 toshiba hdd schematic board cbf 493 TP223 mt2 tEac CBF 423 diode ba39 toshiba 1,8 hdd schematic board TP182 keyboard and touchpad schematic

    DO3316P-152

    Abstract: DO3316P-222 DO3316P-332 SP6122 SP6122ACU STPS2L25U 4300ppm PDS6375
    Text: SP6122 Low Voltage, Micro 8, PFET, Buck Controller Ideal for 1A to 5A, Small Footprint, DC-DC Power Converters • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Optimized for Single Supply, 3V - 7V Applications High Efficiency, Greater than 90% Possible


    Original     		PDF SP6122 20ns/1nF SP6122 DO3316P-152 DO3316P-222 DO3316P-332 SP6122ACU STPS2L25U 4300ppm PDS6375