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    SI4404DY Search Results

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    SI4404DY Price and Stock

    Vishay Siliconix SI4404DY-T1-E3

    MOSFET N-CH 30V 15A 8SO
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    DigiKey SI4404DY-T1-E3 Reel
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    SI4404DY-T1-E3 Cut Tape
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    SI4404DY-T1-E3 Digi-Reel 1
    • 1 $3.1
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    Vishay Siliconix SI4404DY-T1-GE3

    MOSFET N-CH 30V 15A 8SO
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    DigiKey SI4404DY-T1-GE3 Reel
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    Vishay Intertechnologies SI4404DY-T1

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    Bristol Electronics SI4404DY-T1 952
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    Quest Components SI4404DY-T1 1,960
    • 1 $4.35
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    SI4404DY-T1 155
    • 1 $3.9
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    • 100 $2.405
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    Vishay Siliconix SI4404DY-T1

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    Bristol Electronics SI4404DY-T1 97 3
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    • 100 $1.4062
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    Quest Components SI4404DY-T1 77
    • 1 $3
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    Vishay Siliconix SI4404DY

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    Bristol Electronics SI4404DY 22
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    Quest Components SI4404DY 12
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    SI4404DY Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    Si4404DY Vishay Intertechnology N-Channel 30 V (D-S) MOSFET Original PDF
    SI4404DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET Original PDF
    Si4404DY SPICE Device Model Vishay N-Channel 30-V (D-S) MOSFET Original PDF
    Si4404DY-T1 Vishay Siliconix N-Channel 30-V (D-S) MOSFET Original PDF
    SI4404DY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 15A 8-SOIC Original PDF
    SI4404DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 15A 8-SOIC Original PDF

    SI4404DY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si4404DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0065 at VGS = 10 V 23 0.008 at VGS = 4.5 V 17 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si4404DY Si4404DY-T1-E3 Si4404DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SI4404DY

    Abstract: No abstract text available
    Text: Si4404DY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0065 @ VGS = 10 V "23 0.008 @ VGS = 4.5 V "17 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4404DY S-20881--Rev. 10-Jun-02

    71247

    Abstract: SI4404DY
    Text: Si4404DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0065 @ VGS = 10 V 23 0.008 @ VGS = 4.5 V 17 D TrenchFETr Power MOSFET D 100% Rg Tested D Lead (Pb)-Free Version is RoHS Compliant D SO-8 S 1 8 D


    Original     		PDF Si4404DY Si4404DY-T1 Si4404DY-T1--E3 S-50694--Rev. 18-Apr-05 71247

    9433

    Abstract: AN609 Si4404DY 12283
    Text: Si4404DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4404DY AN609 29-Aug-05 9433 12283

    SI4404DY

    Abstract: No abstract text available
    Text: Si4404DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0065 @ VGS = 10 V 23 0.008 @ VGS = 4.5 V 17 D TrenchFETr Power MOSFET D 100% Rg Tested D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4404DY


    Original     		PDF Si4404DY Si4404DY-T1 S-31726--Rev. 18-Aug-03

    Si4404DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4404DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4404DY S-51095Rev. 13-Jun-05

    Untitled

    Abstract: No abstract text available
    Text: Si4404DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0065 at VGS = 10 V 23 0.008 at VGS = 4.5 V 17 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si4404DY Si4404DY-T1-E3 Si4404DY-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si4404DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0065 at VGS = 10 V 23 0.008 at VGS = 4.5 V 17 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si4404DY Si4404DY-T1-E3 Si4404DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    S2183

    Abstract: SI4404DY
    Text: Si4404DY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0065 @ VGS = 10 V 23 0.008 @ VGS = 4.5 V 17 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4404DY S-21836--Rev. 04-Oct-02 S2183

    Si4404DY

    Abstract: No abstract text available
    Text: Si4404DY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0065 @ VGS = 10 V 23 0.008 @ VGS = 4.5 V 17 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4404DY S-03662--Rev. 14-Apr-03

    Untitled

    Abstract: No abstract text available
    Text: Si4404DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0065 @ VGS = 10 V 23 0.008 @ VGS = 4.5 V 17 D TrenchFETr Power MOSFET D 100% Rg Tested D Lead (Pb)-Free Version is RoHS Compliant D SO-8 S 1 8 D


    Original     		PDF Si4404DY Si4404DY-T1 Si4404DY-T1--E3 18-Jul-08

    Si4404DY

    Abstract: No abstract text available
    Text: Si4404DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.004 (typ)@ VGS = 10 V "23 0.008 @ VGS = 4.5 V "17 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4404DY S-01422--Rev. 03-Jul-00

    Si4404DY

    Abstract: Si4404DY-T1-E3
    Text: Si4404DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0065 at VGS = 10 V 23 0.008 at VGS = 4.5 V 17 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si4404DY Si4404DY-T1-E3 Si4404DY-T1-GE3 18-Jul-08

    SI4856ADY-T1-E3

    Abstract: SI4856ADY 74290 si4856A Si4404DY SI4856ADY-T1 Si4404DY-T1 Si4404DY-T1-E3
    Text: Specification Comparison Vishay Siliconix Si4856ADY vs. Si4404DY Description: Package: Pin Out: N-Channel, 30 V D-S MOSFET SO-8 Identical Part Number Replacements Si4856ADY-T1-E3 Replaces Si4404DY-T1-E3 Si4856ADY-T1-E3 Replaces Si4404DY-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original     		PDF Si4856ADY Si4404DY Si4856ADY-T1-E3 Si4404DY-T1-E3 Si4404DY-T1 06-Nov-06 74290 si4856A SI4856ADY-T1

    Si4404DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4404DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4404DY 0-to-10V 15-Jun-01

    Si4404DY

    Abstract: Si4404DY-T1
    Text: Si4404DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0065 @ VGS = 10 V 23 0.008 @ VGS = 4.5 V 17 D TrenchFETr Power MOSFET D 100% Rg Tested D Lead (Pb)-Free Version is RoHS Compliant D SO-8 S 1 8 D


    Original     		PDF Si4404DY Si4404DY-T1 Si4404DY-T1--E3 08-Apr-05

    Si4404DY

    Abstract: Si4404DY-T1
    Text: Si4404DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0065 @ VGS = 10 V 23 0.008 @ VGS = 4.5 V 17 D TrenchFETr Power MOSFET D 100% Rg Tested D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4404DY


    Original     		PDF Si4404DY Si4404DY-T1 S-31873--Rev. 15-Sep-03

    ISL6217CVZ-T

    Abstract: ISL6217 ISL6217CV ISL6217CV-T ISL6217CVZ ISL6217CVZA ISL6217CVZA-T
    Text: NS ESIG D EW R N DUCT O F D RO NDE TUTE P E M STI Data OM 7A Sheet REC EE SUB ISL621 T O S N ISL6217 December 2006 Precision Multi-Phase Buck PWM Controller for Intel‚ Mobile Voltage Positioning IMVP-IV and IMVP-IV+™ FN9089.3 Features • IMVP-IV™ and IMVP-IV+™ Compliant CORE Regulator


    Original     		PDF ISL62 ISL6217 FN9089 ISL6217 ISL6217CVZ-T ISL6217CV ISL6217CV-T ISL6217CVZ ISL6217CVZA ISL6217CVZA-T

    71917

    Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
    Text: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller


    Original     		PDF AN607 Si9137 SSOP-28 Si9910 Si9912 Si9913 10-Oct-02 71917 level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds

    39T0167

    Abstract: U-558 Socket AM2 ADP3205 rome 455D NO10V 1D93 ibm rome BI 335A
    Text: A B C D E F G H J K L M N DATE REL 9 EC NO. 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21. 22. 23. 24. 25. 26. 27. 28. 29. 30. 31. 32. 33. 34. 35. 36. 37. 38. 39. 40. 41. 42. 43. 44. 7 6 5 4 3 2 1 TITLE PAGE EC HISTORY CPU 1/3


    Original     		PDF DEC/07/04 J79495 39T0167 1/16W R1003 R1002 LMV431 R1004 39T0167 U-558 Socket AM2 ADP3205 rome 455D NO10V 1D93 ibm rome BI 335A

    cdb 400E

    Abstract: Memsic 2125 PCI4520 ADP3806 C401 class q 607p rome-1 planar 8C546 PMH4 CRYSTAL g 472b
    Text: A B C D E F G H J K L M N DATE 9 APOLLO-9 PLANAR VER 0.60 REL RED RED M9/KINNERETH-R BASE DEC/26/2003 7 6 5 4 3 2 1 13R1151 A TITLE PAGE EC HISTORY CPU(1/3) CPU(2/3) CPU(3/3) ITP CONN VCCCPUCORE DECOUPLING MCH-M(1/4) MCH-M(2/4) MCH-M(3/4) MCH-M(4/4) DDR SO DIMM CONNECTOR 0


    Original     		PDF 13R1151 J46283 J46283A J46283B DEC/26/2003 1/16W 1/16W cdb 400E Memsic 2125 PCI4520 ADP3806 C401 class q 607p rome-1 planar 8C546 PMH4 CRYSTAL g 472b

    GL3220

    Abstract: Compal Electronics Ali 3601 compal k5w12 LA-1421 fdv301
    Text: A B C D E 1 2 1 LA-1421 Schematics Document uFCBGA/uFCPGA for Celeron/ Coppermine-T and Tualatin CPU Ver1.0 2 Almador-M 830-MG + ICH3 + VCH 3 3 4 4 Title Compal Electronics, inc. SCHEMATIC, M/B LA-1421 THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL


    Original     		PDF LA-1421 830-MG) 10Ohm GL3220 Compal Electronics Ali 3601 compal k5w12 fdv301

    474j capacitor

    Abstract: AN12942A bd7 c836 476j 13R1088 radeon R515 692N 2A 473J D20001 596B
    Text: A B C D E F G H J K L M N DATE REL 9 EC NO. 11/21/03 Q 13R1088 J45843A ROME-1 PLANAR M9/KINNERETH-R/WO-ACC BASE VER 0.99 P PART NO. 9 DEVELOPMENT NO. Q/M /82 1 NOV/21/2003 8 8 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21. 22.


    Original     		PDF J45843A 13R1088 NOV/21/2003 474j capacitor AN12942A bd7 c836 476j 13R1088 radeon R515 692N 2A 473J D20001 596B

    ixfh26n60q

    Abstract: 2SK2333 2SK2761 IRF1405 BUZ345 BSS89 irfp250n P9NB60 irfp260n 2sk2671
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 IRF7319 IRF7413 IRF7455 IRL2203N IRL3103 IRL3713 IRL3803 IRL3803S IRLL2703 SI4404DY SI4412ADY


    OCR Scan     		PDF SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 T0220AB IRF7319 IRF7413 IRF7455 IRL2203N ixfh26n60q 2SK2333 2SK2761 IRF1405 BUZ345 BSS89 irfp250n P9NB60 irfp260n 2sk2671