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Vishay Siliconix SI4966DY-T1-E3 MOSFET 2N-CH 20V 8SOIC
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DigiKey	SI4966DY-T1-E3	Digi-Reel			1	1 $1.71 10 $1.71 100 $1.71 1000 $1.71 10000 $1.71	Buy Now
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RS	SI4966DY-T1-E3	Bulk			2,500	1 - 10 - 100 - 1000 - 10000 $1.73	Get Quote
Quest Components	SI4966DY-T1-E3		248			1 $3.48 10 $3.48 100 $1.74 1000 $1.6095 10000 $1.6095	Buy Now
Vishay Siliconix SI4966DY-T1-GE3 MOSFET 2N-CH 20V 8SOIC
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DigiKey	SI4966DY-T1-GE3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SI4966DY
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Bristol Electronics	SI4966DY		1,148			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix SI4966DYT1
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Bristol Electronics	SI4966DYT1		1,126			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix SI4966DY
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Bristol Electronics	SI4966DY		105			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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SI4966DY Datasheets (6)

Part	Manufacturer	Description	Datasheet Type	PDF
Si4966DY	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
SI4966DY	Vishay	Dual N-Channel 2.5-V (G-S) MOSFET	Original	PDF
Si4966DY	Vishay Intertechnology	Dual N-Channel 2.5-V (G-S) MOSFET	Original	PDF
SI4966DY-T1	Vishay Intertechnology	Dual N-Channel 2.5-V (G-S) MOSFET	Original	PDF
SI4966DY-T1-E3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 8SOIC	Original	PDF
SI4966DY-T1-GE3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 8SOIC	Original	PDF

SI4966DY Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.025 at VGS = 4.5 V ± 7.1 0.035 at VGS = 2.5 V ± 6.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si4966DY 2002/95/EC Si4966DY-T1-E3 Si4966DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.025 @ VGS = 4.5 V "7.1 0.035 @ VGS = 2.5 V "6.0 D TrenchFETr Power MOSFET D 2.5-V Rated D Lead (Pb)-Free Version is RoHS Compliant D1 SO-8	Original	Si4966DY Si4966DY-T1 Si4966DY-T1--E3 S-50695--Rev. 18-Apr-05	PDF
Si4966DY Abstract: No abstract text available Text: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.025 @ VGS = 4.5 V "7.1 0.035 @ VGS = 2.5 V "6.0 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 N-Channel MOSFET N-Channel MOSFET	Original	Si4966DY Temperature50 S-54939--Rev. 29-Sep-97	PDF
Si4966DY Abstract: No abstract text available Text: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(ON) (W) ID (A) 0.025 @ VGS = 4.5 V "7.1 0.035 @ VGS = 2.5 V "6.0 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 N-Channel MOSFET N-Channel MOSFET	Original	Si4966DY Storag50 S-54939--Rev. 29-Sep-97	PDF
Si4966DY Abstract: No abstract text available Text: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.025 at VGS = 4.5 V " 7.1 0.035 at VGS = 2.5 V " 6.0 D TrenchFETr Power MOSFET D 2.5 V Rated D 100 % Rg tested D1 SO-8 S1 1 8 D1 G1 2 7 D1 S2	Original	Si4966DY 08-Apr-05	PDF
Si4966DY Abstract: No abstract text available Text: Si4966DY Dual N-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) 20 rDS(on) (W) ID (A) 0.025 @ VGS = 4.5 V "7.1 0.035 @ VGS = 2.5 V "6.0 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET	Original	Si4966DY S-54939--Rev. 29-Sep-97	PDF
Si4966DY Abstract: No abstract text available Text: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.025 at VGS = 4.5 V " 7.1 0.035 at VGS = 2.5 V " 6.0 D TrenchFETr Power MOSFET D 2.5 V Rated D 100 % Rg tested D1 SO-8 S1 1 8 D1 G1 2 7 D1 S2	Original	Si4966DY	PDF
Untitled Abstract: No abstract text available Text: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.025 at VGS = 4.5 V ± 7.1 0.035 at VGS = 2.5 V ± 6.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si4966DY 2002/95/EC Si4966DY-T1-E3 Si4966DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.025 at VGS = 4.5 V ± 7.1 0.035 at VGS = 2.5 V ± 6.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si4966DY 2002/95/EC Si4966DY-T1-E3 Si4966DY-T1-GE3 11-Mar-11	PDF
3771 Abstract: 8948 AN609 Si4966DY Text: Si4966DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si4966DY AN609 12-Jan-06 3771 8948	PDF
Si4966DY Abstract: Si4966DY-T1-E3 Text: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.025 at VGS = 4.5 V ± 7.1 0.035 at VGS = 2.5 V ± 6.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si4966DY 2002/95/EC Si4966DY-T1-E3 Si4966DY-T1-GE3 18-Jul-08	PDF
Si4966DY Abstract: No abstract text available Text: Si4966DY Dual N-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) 20 rDS(on) (W) ID (A) 0.025 @ VGS = 4.5 V "7.1 0.035 @ VGS = 2.5 V "6.0 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET	Original	Si4966DY S-54939--Rev. 29-Sep-97	PDF
Untitled Abstract: No abstract text available Text: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.025 at VGS = 4.5 V " 7.1 0.035 at VGS = 2.5 V " 6.0 D TrenchFETr Power MOSFET D 2.5 V Rated D 100 % Rg tested D1 SO-8 S1 1 8 D1 G1 2 7 D1 S2	Original	Si4966DY 18-Jul-08	PDF
Untitled Abstract: No abstract text available Text: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.025 @ VGS = 4.5 V "7.1 0.035 @ VGS = 2.5 V "6.0 D TrenchFETr Power MOSFET D 2.5-V Rated D Lead (Pb)-Free Version is RoHS Compliant D1 SO-8	Original	Si4966DY Si4966DY-T1 Si4966DY-T1--E3 08-Apr-05	PDF

MSM586SEV Abstract: SI4966DY U-152 MSM586-SEV Text: APPLICATION NOTE 099 5V on ISA BUS is not available From: Dar Product: MSM586SEV / SEN To: Support Version: V2.1 Date: 15.01.2002 BIOS: - Who has issued this problem description: DLAG Support The problem description: The 5V on the ISA BUS are missing. The Application Fix Report:	Original	MSM586SEV SI4966DY) J48/PIN2 App\app-099 app-099 SI4966DY U-152 MSM586-SEV	PDF
Untitled Abstract: No abstract text available Text: 19-2795; Rev 2; 6/07 Low-Cost, Wide Input Range, Step-Down Controllers with Foldback Current Limit The MAX8545/MAX8546/MAX8548 are voltage-mode pulse-width-modulated PWM , step-down DC-DC controllers ideal for a variety of cost-sensitive applications. They drive low-cost n-channel MOSFETs for both the	Original	MAX8545/MAX8546/MAX8548	PDF
AD91018 Abstract: ibm usa 2001 P6 MOTHERBOARD TRANSISTOR A107 Transistor HA17 bjt transistor c243 capacitor E4 2200uF 16V 8061 intel hp 530 motherboard power supply solution hp 530 motherboard circuit and solution C328 Text: Intel 820 Chipset Design Guide July 2000 Order Number: 290631-004 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions of Sale for such products, Intel assumes no liability	Original		PDF
intel 945 motherboard schematic diagram Abstract: Tablet PC R116 schematic PC intel 945 MOTHERBOARD schematic intel 945 crb schematic intel chipset 945 motherboard PC intel 945 MOTHERBOARD mosfet used in CIRCUIT atx 400 pnf Intel 855PM Odem ICH4-M temperature controlled fan project using thermister Intel 945 mother board diagram Text: R Intel 855PM Chipset Platform Design Guide For use with Intel Pentium M and Intel Celeron M Processors ® ® ® ® May 2004 Revision Number 003 Document Number: 252614-003 R Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual	Original	855PM 855PM intel 945 motherboard schematic diagram Tablet PC R116 schematic PC intel 945 MOTHERBOARD schematic intel 945 crb schematic intel chipset 945 motherboard PC intel 945 MOTHERBOARD mosfet used in CIRCUIT atx 400 pnf Intel 855PM Odem ICH4-M temperature controlled fan project using thermister Intel 945 mother board diagram	PDF
irfb4115 Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor	PDF
mosfet cross reference Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P	Original	2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L	PDF
SSP35n03 Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A	Original	5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent	PDF
STM9435 Abstract: AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M stm4532 FDD6685 AP9960M APEC Text: South Sea Semiconductor Cross Reference Guide Competitor SSS Competitor Part Number Part Number STU3055L2 APM2034NU ANPEC STU4030NL APM2512NU ANPEC STU4030NL APM3011NU ANPEC STU3030PL APM3020PU ANPEC APM3023N ANPEC STU3030NL APM4210K ANPEC SDM4410 APM4220K ANPEC	Original	STU3055L2 APM2034NU STU4030NL APM2512NU APM3011NU STU3030PL APM3020PU APM3023N STU3030NL STM9435 AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M stm4532 FDD6685 AP9960M APEC	PDF
ixfh26n60q Abstract: 2SK2333 2SK2761 IRF1405 BUZ345 BSS89 irfp250n P9NB60 irfp260n 2sk2671 Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 IRF7319 IRF7413 IRF7455 IRL2203N IRL3103 IRL3713 IRL3803 IRL3803S IRLL2703 SI4404DY SI4412ADY	OCR Scan	SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 T0220AB IRF7319 IRF7413 IRF7455 IRL2203N ixfh26n60q 2SK2333 2SK2761 IRF1405 BUZ345 BSS89 irfp250n P9NB60 irfp260n 2sk2671	PDF
Untitled Abstract: No abstract text available Text: Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET P R O D U C T SUM M ARY v Ds m Rds«m ) ( ) I d {A) 0.025 @ VGS = 4.5 V ±7.1 0.035 @ VGS = 2.5 V ±6.0 i» -* 20 u D, SO -8 D, U o jl d2 ~5~1 D2 Dg D2 PARAMETER Ô Ô Si S2 N-Channel MOSFET N-Channet MOSFET	OCR Scan	S-54939-- 29-Sep-97 Si4966DY	PDF

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Vishay Siliconix SI4966DY-T1-E3

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SI4966DY Datasheets (6)

SI4966DY Datasheets Context Search

Untitled

Untitled

Si4966DY

Si4966DY

Si4966DY

Si4966DY

Si4966DY

Untitled

Untitled

3771

Si4966DY

Si4966DY

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MSM586SEV

Untitled

AD91018

intel 945 motherboard schematic diagram

irfb4115

mosfet cross reference

SSP35n03

STM9435

ixfh26n60q

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