Untitled
Abstract: No abstract text available
Text: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.025 at VGS = 4.5 V ± 7.1 0.035 at VGS = 2.5 V ± 6.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si4966DY
2002/95/EC
Si4966DY-T1-E3
Si4966DY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.025 @ VGS = 4.5 V "7.1 0.035 @ VGS = 2.5 V "6.0 D TrenchFETr Power MOSFET D 2.5-V Rated D Lead (Pb)-Free Version is RoHS Compliant D1 SO-8
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Si4966DY
Si4966DY-T1
Si4966DY-T1--E3
S-50695--Rev.
18-Apr-05
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Si4966DY
Abstract: No abstract text available
Text: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.025 @ VGS = 4.5 V "7.1 0.035 @ VGS = 2.5 V "6.0 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 N-Channel MOSFET N-Channel MOSFET
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Si4966DY
Temperature50
S-54939--Rev.
29-Sep-97
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Si4966DY
Abstract: No abstract text available
Text: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(ON) (W) ID (A) 0.025 @ VGS = 4.5 V "7.1 0.035 @ VGS = 2.5 V "6.0 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 N-Channel MOSFET N-Channel MOSFET
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Si4966DY
Storag50
S-54939--Rev.
29-Sep-97
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Si4966DY
Abstract: No abstract text available
Text: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.025 at VGS = 4.5 V " 7.1 0.035 at VGS = 2.5 V " 6.0 D TrenchFETr Power MOSFET D 2.5 V Rated D 100 % Rg tested D1 SO-8 S1 1 8 D1 G1 2 7 D1 S2
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Si4966DY
08-Apr-05
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Si4966DY
Abstract: No abstract text available
Text: Si4966DY Dual N-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) 20 rDS(on) (W) ID (A) 0.025 @ VGS = 4.5 V "7.1 0.035 @ VGS = 2.5 V "6.0 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET
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Si4966DY
S-54939--Rev.
29-Sep-97
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Si4966DY
Abstract: No abstract text available
Text: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.025 at VGS = 4.5 V " 7.1 0.035 at VGS = 2.5 V " 6.0 D TrenchFETr Power MOSFET D 2.5 V Rated D 100 % Rg tested D1 SO-8 S1 1 8 D1 G1 2 7 D1 S2
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Si4966DY
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Untitled
Abstract: No abstract text available
Text: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.025 at VGS = 4.5 V ± 7.1 0.035 at VGS = 2.5 V ± 6.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si4966DY
2002/95/EC
Si4966DY-T1-E3
Si4966DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.025 at VGS = 4.5 V ± 7.1 0.035 at VGS = 2.5 V ± 6.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si4966DY
2002/95/EC
Si4966DY-T1-E3
Si4966DY-T1-GE3
11-Mar-11
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3771
Abstract: 8948 AN609 Si4966DY
Text: Si4966DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si4966DY
AN609
12-Jan-06
3771
8948
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Si4966DY
Abstract: Si4966DY-T1-E3
Text: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.025 at VGS = 4.5 V ± 7.1 0.035 at VGS = 2.5 V ± 6.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si4966DY
2002/95/EC
Si4966DY-T1-E3
Si4966DY-T1-GE3
18-Jul-08
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Si4966DY
Abstract: No abstract text available
Text: Si4966DY Dual N-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) 20 rDS(on) (W) ID (A) 0.025 @ VGS = 4.5 V "7.1 0.035 @ VGS = 2.5 V "6.0 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET
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Si4966DY
S-54939--Rev.
29-Sep-97
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Untitled
Abstract: No abstract text available
Text: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.025 at VGS = 4.5 V " 7.1 0.035 at VGS = 2.5 V " 6.0 D TrenchFETr Power MOSFET D 2.5 V Rated D 100 % Rg tested D1 SO-8 S1 1 8 D1 G1 2 7 D1 S2
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Si4966DY
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.025 @ VGS = 4.5 V "7.1 0.035 @ VGS = 2.5 V "6.0 D TrenchFETr Power MOSFET D 2.5-V Rated D Lead (Pb)-Free Version is RoHS Compliant D1 SO-8
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Si4966DY
Si4966DY-T1
Si4966DY-T1--E3
08-Apr-05
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MSM586SEV
Abstract: SI4966DY U-152 MSM586-SEV
Text: APPLICATION NOTE 099 5V on ISA BUS is not available From: Dar Product: MSM586SEV / SEN To: Support Version: V2.1 Date: 15.01.2002 BIOS: - Who has issued this problem description: DLAG Support The problem description: The 5V on the ISA BUS are missing. The Application Fix Report:
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MSM586SEV
SI4966DY)
J48/PIN2
App\app-099
app-099
SI4966DY
U-152
MSM586-SEV
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Untitled
Abstract: No abstract text available
Text: 19-2795; Rev 2; 6/07 Low-Cost, Wide Input Range, Step-Down Controllers with Foldback Current Limit The MAX8545/MAX8546/MAX8548 are voltage-mode pulse-width-modulated PWM , step-down DC-DC controllers ideal for a variety of cost-sensitive applications. They drive low-cost n-channel MOSFETs for both the
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MAX8545/MAX8546/MAX8548
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AD91018
Abstract: ibm usa 2001 P6 MOTHERBOARD TRANSISTOR A107 Transistor HA17 bjt transistor c243 capacitor E4 2200uF 16V 8061 intel hp 530 motherboard power supply solution hp 530 motherboard circuit and solution C328
Text: Intel 820 Chipset Design Guide July 2000 Order Number: 290631-004 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions of Sale for such products, Intel assumes no liability
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intel 945 motherboard schematic diagram
Abstract: Tablet PC R116 schematic PC intel 945 MOTHERBOARD schematic intel 945 crb schematic intel chipset 945 motherboard PC intel 945 MOTHERBOARD mosfet used in CIRCUIT atx 400 pnf Intel 855PM Odem ICH4-M temperature controlled fan project using thermister Intel 945 mother board diagram
Text: R Intel 855PM Chipset Platform Design Guide For use with Intel Pentium M and Intel Celeron M Processors ® ® ® ® May 2004 Revision Number 003 Document Number: 252614-003 R Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual
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855PM
855PM
intel 945 motherboard schematic diagram
Tablet PC R116 schematic
PC intel 945 MOTHERBOARD schematic
intel 945 crb
schematic intel chipset 945 motherboard
PC intel 945 MOTHERBOARD mosfet used in CIRCUIT
atx 400 pnf
Intel 855PM Odem ICH4-M
temperature controlled fan project using thermister
Intel 945 mother board diagram
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irfb4115
Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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element-14
F155-6A
F155-10A
F165-15A
F175-25A
irfb4115
BTY79 equivalent
diode skn 21-04
marking CODE W04 sot-23
bbc 598 479 DIODE
mw 137 600g
TFK 401 S 673
Vishay Telefunken tfk transistor
INFINEON transistor marking W31
JYs marking transistor
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mosfet cross reference
Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P
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2N7000
IRF7203
FDS9435A
2N7002
OT-23,
IRF7204
NDS8434A
BS170
mosfet cross reference
SMP40N06
SMP75N06-08
SI9952DY
SMP60N03-10L
IRFZ44 TO-263
Si9948DY
irf1010e equivalent
IRLL014N
NDT3055L
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SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A
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5KE100A
5KE100CA
5KE10A
5KE10CA
5KE110A
5KE110CA
5KE11A
5KE11CA
5KE120A
5KE120CA
SSP35n03
bc417
ksh200 equivalent
2N5457 equivalent
ss8050 equivalent
1N34 equivalent
FQP50N06 equivalent
bd139 equivalent
2N5458 equivalent
2N3563 equivalent
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STM9435
Abstract: AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M stm4532 FDD6685 AP9960M APEC
Text: South Sea Semiconductor Cross Reference Guide Competitor SSS Competitor Part Number Part Number STU3055L2 APM2034NU ANPEC STU4030NL APM2512NU ANPEC STU4030NL APM3011NU ANPEC STU3030PL APM3020PU ANPEC APM3023N ANPEC STU3030NL APM4210K ANPEC SDM4410 APM4220K ANPEC
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STU3055L2
APM2034NU
STU4030NL
APM2512NU
APM3011NU
STU3030PL
APM3020PU
APM3023N
STU3030NL
STM9435
AP4411
ao3411
EQUIVALENT STM8405
AP40N03H
AP4936M
stm4532
FDD6685
AP9960M
APEC
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ixfh26n60q
Abstract: 2SK2333 2SK2761 IRF1405 BUZ345 BSS89 irfp250n P9NB60 irfp260n 2sk2671
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 IRF7319 IRF7413 IRF7455 IRL2203N IRL3103 IRL3713 IRL3803 IRL3803S IRLL2703 SI4404DY SI4412ADY
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SI4466DY
SI4966DY
SI9925DY
SI9942DY
2SK1388
T0220AB
IRF7319
IRF7413
IRF7455
IRL2203N
ixfh26n60q
2SK2333
2SK2761
IRF1405
BUZ345
BSS89
irfp250n
P9NB60
irfp260n
2sk2671
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Untitled
Abstract: No abstract text available
Text: Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET P R O D U C T SUM M ARY v Ds m Rds«m ) ( ) I d {A) 0.025 @ VGS = 4.5 V ±7.1 0.035 @ VGS = 2.5 V ±6.0 i» -* 20 u D, SO -8 D, U o jl d2 ~5~1 D2 Dg D2 PARAMETER Ô Ô Si S2 N-Channel MOSFET N-Channet MOSFET
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OCR Scan
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S-54939--
29-Sep-97
Si4966DY
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