SI6874EDQ Search Results

SI6874EDQ Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
Si6874EDQ		Vishay Intertechnology	Dual N-Channel 20-V (D-S) MOSFET, Common Drain		Original	PDF
SI6874EDQ		Vishay Siliconix	MOSFETs		Original	PDF

SI6874EDQ Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Si6874EDQ Abstract: No abstract text available Text: Si6874EDQ Vishay Siliconix Dual N-Channel 20-V D-S MOSFET, Common Drain FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.026 @ VGS = 4.5 V 6.5 0.031 @ VGS = 2.5 V 5.8 0.039 @ VGS = 1.8 V 5.0 D 3000-V ESD Protection D Lead (Pb)-Free Version is RoHS	Original	Si6874EDQ 000-V Si6874EDQ-T1 Si6874EDQ-T1--E3 S-50695--Rev. 18-Apr-05	PDF
AN609 Abstract: Si6874EDQ 40375 Text: Si6874EDQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si6874EDQ AN609 02-Jul-07 40375	PDF
Si6874EDQ Abstract: 71252 Text: Si6874EDQ New Product Vishay Siliconix Dual N-Channel 20-V D-S MOSFET, Common Drain PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.026 @ VGS = 4.5 V 6.5 0.031 @ VGS = 2.5 V 5.8 0.039 @ VGS = 1.8 V 5.0 D D TSSOP-8 D 8 D 7 D 3 6 D 4 5 D S1 1 G1 2 S2 G2 Si6874EDQ	Original	Si6874EDQ S-01753--Rev. 14-Aug-00 71252	PDF
Si6874EDQ Abstract: No abstract text available Text: Si6874EDQ Vishay Siliconix Dual N-Channel 20-V D-S MOSFET, Common Drain FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.026 @ VGS = 4.5 V 6.5 0.031 @ VGS = 2.5 V 5.8 0.039 @ VGS = 1.8 V 5.0 D 3000-V ESD Protection D Lead (Pb)-Free Version is RoHS	Original	Si6874EDQ 000-V Si6874EDQ-T1 Si6874EDQ-T1--E3 18-Jul-08	PDF
Untitled Abstract: No abstract text available Text: Si6874EDQ Vishay Siliconix Dual N-Channel 20-V D-S MOSFET, Common Drain FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.026 @ VGS = 4.5 V 6.5 0.031 @ VGS = 2.5 V 5.8 0.039 @ VGS = 1.8 V 5.0 D 3000-V ESD Protection D Lead (Pb)-Free Version is RoHS	Original	Si6874EDQ 000-V Si6874EDQ-T1 Si6874EDQ-T1--E3 08-Apr-05	PDF
Siliconix Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent Text: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123	Original	2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent	PDF
Siliconix mosfet guide Abstract: Si9371 power selector guide Si8901EDB Si6875DQ nimh spice model charge SI8901 vishay resistances guide Si4927DY Si6866BDQ Text: Power MOSFETs for Battery Pack Applications Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no	Original	Si9731 TSSOP-16 Si9371 Siliconix mosfet guide Si9371 power selector guide Si8901EDB Si6875DQ nimh spice model charge SI8901 vishay resistances guide Si4927DY Si6866BDQ	PDF
PowerPAK 1212 die Abstract: PowerPAK 1212-8 AN822 Si6874EDQ Si7900EDN Text: Copyright 2004 IEEE. Reprinted from the proceedings of the 52nd Electronic Components and Technology Conference ECTC , May 27-30, 2002, New Orleans, Louisiana. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Vishay Intertechnology, Inc.'s products or	Original	PowerPAK-1212 AN822, PowerPAK 1212 die PowerPAK 1212-8 AN822 Si6874EDQ Si7900EDN	PDF
si5480 Abstract: SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3 Text: Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 7.4 - 20 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT	Original	Si6463BDQ Si6459BDQ-T1-GE3 SI5944DU-T1-E3 SI5944DU-T1-GE3 SI5945DU-T1-E3 SI5945DU-T1-GE3 SI5947DU-T1-E3 SI5947DU-T1-GE3 PPAKSC75 si5480 SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3	PDF