PowerPAK 1212-8
Abstract: Si7409DN Si7409DN-T1 Si7409ADN
Text: Specification Comparison Vishay Siliconix Si7409ADN vs. Si7409DN Description: Single P-Channel, - 30 V D-S MOSFET Package: PowerPAK 1212-8 Pin Out: Identical Part Number Replacements: Si7409ADN-T1-E (Lead (Pb)-free) Replaces Si7409DN-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
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Si7409ADN
Si7409DN
Si7409ADN-T1-E
Si7409DN-T1
10-Nov-06
PowerPAK 1212-8
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Si7409DN
Abstract: Si7409DN-T1
Text: Si7409DN New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.019 @ VGS = - 4.5 V - 11 0.031 @ VGS = - 2.5 V - 8.5 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile
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Si7409DN
07-mm
Si7409DN-T1
S-03372--Rev.
03-Mar-03
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Si7409DN
Abstract: Si7409DN-T1
Text: Si7409DN Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.019 @ VGS = −4.5 V −11 0.031 @ VGS = −2.5 V −8.5 Qg (Typ) 25 D TrenchFETr Power MOSFET Available D New Low Thermal Resistance PowerPAKrPackage with Low 1.07-mm Profile
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Si7409DN
07-mm
Si7409DN-T1
Si7409DN-T1--E3
18-Jul-08
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41068
Abstract: Si7409DN Si7409DN-T1
Text: Si7409DN Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.019 @ VGS = −4.5 V −11 0.031 @ VGS = −2.5 V −8.5 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKrPackage with Low 1.07-mm Profile
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Si7409DN
07-mm
Si7409DN-T1
S-41068--Rev.
31-May-04
41068
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Untitled
Abstract: No abstract text available
Text: Si7409DN Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.019 @ VGS = −4.5 V −11 0.031 @ VGS = −2.5 V −8.5 Qg (Typ) 25 D TrenchFETr Power MOSFET Available D New Low Thermal Resistance PowerPAKrPackage with Low 1.07-mm Profile
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Si7409DN
07-mm
Si7409DN-T1
Si7409DN-T1--E3
S-50695--Rev.
18-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si7409DN Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.019 @ VGS = −4.5 V −11 0.031 @ VGS = −2.5 V −8.5 Qg (Typ) 25 D TrenchFETr Power MOSFET Available D New Low Thermal Resistance PowerPAKrPackage with Low 1.07-mm Profile
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Original
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PDF
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Si7409DN
07-mm
Si7409DN-T1
Si7409DN-T1--E3
08-Apr-05
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Si7409DN
Abstract: No abstract text available
Text: SPICE Device Model Si7409DN Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7409DN
29-Aug-03
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Si7409DN
Abstract: TR-2450 mosfet Vds 30 Vgs 25
Text: SPICE Device Model Si7409DN Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7409DN
24-May-04
TR-2450
mosfet Vds 30 Vgs 25
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Si7409DN
Abstract: diode Rl 257
Text: SPICE Device Model Si7409DN Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7409DN
18-Jul-08
diode Rl 257
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