mosfet k 2038
Abstract: IRFP450A
Text: IRFP450A, SiHFP450A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 64 Qgs (nC) 16 Qgd (nC) • Improved Gate, Avalanche and Dynamic dV/dt
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IRFP450A,
SiHFP450A
O-247
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
mosfet k 2038
IRFP450A
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Untitled
Abstract: No abstract text available
Text: IRFP450LC, SiHFP450LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 74 Qgs (nC) 19 Qgd (nC) 35 Configuration Single D Ultra Low Gate Charge Reduced Gate Drive Requirement
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IRFP450LC,
SiHFP450LC
O-247
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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IRFIBC40
Abstract: TO-220 FULLPAK Package SiHFIBC40G
Text: IRFIBC40G, SiHFIBC40G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • Isolated Package Low Thermal Resistance Sink to Lead Creepage Dist. = 4.8 mm High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Dynamic dV/dt Rating
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IRFIBC40G,
SiHFIBC40G
O-220
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRFIBC40
TO-220 FULLPAK Package
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Untitled
Abstract: No abstract text available
Text: IRFP450LC, SiHFP450LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 74 Qgs (nC) 19 Qgd (nC) 35 Configuration Single D Ultra Low Gate Charge Reduced Gate Drive Requirement
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Original
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PDF
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IRFP450LC,
SiHFP450LC
O-247
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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IRFIBC40
Abstract: IRFIBC40GLC SiHFIBC40GLC SiHFIBC40GLC-E3 SiHFIBC40G
Text: IRFIBC40GLC, SiHFIBC40GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance
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IRFIBC40GLC,
SiHFIBC40GLC
O-220
18-Jul-08
IRFIBC40
IRFIBC40GLC
SiHFIBC40GLC-E3
SiHFIBC40G
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IRFP22N60K
Abstract: irfp22n60 91208 SiHFP22N60K
Text: IRFP22N60K, SiHFP22N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.24 Qg (Max.) (nC) 150 Qgs (nC) 45 Qgd (nC) 76 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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IRFP22N60K,
SiHFP22N60K
O-247
18-Jul-08
IRFP22N60K
irfp22n60
91208
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2.1 to 5.1 home theatre circuit diagram
Abstract: AT91SAM home theatre 2.1
Text: Features • Supported Standards MPEG-4 Simple and Advanced Profile, Levels 0-5 1 H.264 Baseline Profile, Levels 1-3.1 H.263 Profile 0, Levels 10-70 VC-1 • Simple Profile, Low and Medium Levels • Main Profile, Low, Medium and High Levels • Advanced Profile, Levels 1-3
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6377BS
16-Jun-08
2.1 to 5.1 home theatre circuit diagram
AT91SAM
home theatre 2.1
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IRFI644G
Abstract: SiHFI644G SiHFI644G-E3 S-81290-Rev
Text: IRFI644G, SiHFI644G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance
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IRFI644G,
SiHFI644G
O-220
11-Mar-11
IRFI644G
SiHFI644G-E3
S-81290-Rev
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IRFP31N50L
Abstract: irfp31n50
Text: IRFP31N50L, SiHFP31N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.15 Available RoHS* Qg (Max.) (nC) 210 Qgs (nC) 58 • Lower Gate Charge Results in Simpler Drive
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IRFP31N50L,
SiHFP31N50L
O-247
18-Jul-08
IRFP31N50L
irfp31n50
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part marking ab
Abstract: IRLR120 IRLU120 SiHLR120 SiHLR120-E3
Text: IRLR120, IRLU120, SiHLR120, SiHLU120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V • Repetitive Avalanche Rated 0.27 Qg (Max.) (nC) 12 • Surface Mount (IRLR120/SiHLR120) Qgs (nC) 3.0
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IRLR120,
IRLU120,
SiHLR120
SiHLU120
IRLR120/SiHLR120)
IRLU120/SiHLU120)
O-252)
O-251)
18-Jul-08
part marking ab
IRLR120
IRLU120
SiHLR120-E3
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IRFI720GPBF
Abstract: IRFI720G SiHFI720G SiHFI720G-E3
Text: IRFI720G, SiHFI720G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance
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IRFI720G,
SiHFI720G
O-220
18-Jul-08
IRFI720GPBF
IRFI720G
SiHFI720G-E3
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IRF730
Abstract: SiHF730 SiHF730-E3
Text: IRF730, SiHF730 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.7 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration
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IRF730,
SiHF730
O-220
O-220
50lectual
18-Jul-08
IRF730
SiHF730-E3
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IRLR110
Abstract: IRLU110
Text: IRLR110, IRLU110, SiHLR110, SiHLU110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Available • Repetitive Avalanche Rated 0.54 Qg (Max.) (nC) 6.1 • Surface Mount (IRLR110/SiHLR110)
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IRLR110,
IRLU110,
SiHLR110
SiHLU110
IRLR110/SiHLR110)
IRLU110/SiHLU110)
O-252)
O-251)
18-Jul-08
IRLR110
IRLU110
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IRFP048R
Abstract: No abstract text available
Text: IRFP048R, SiHFP048R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 110 Qgs (nC) 29 Qgd (nC) 38 Configuration • Isolated Central Mounting Hole 0.018 COMPLIANT • Ease of Paralleling
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IRFP048R,
SiHFP048R
O-247
O-220
O-218
18-Jul-08
IRFP048R
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mosfet k 2038
Abstract: two transistor forward IRFP450A SiHFP450A free transistor vishay ld 91230
Text: IRFP450A, SiHFP450A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 64 Qgs (nC) 16 Qgd (nC) • Improved Gate, Avalanche and Dynamic dV/dt
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IRFP450A,
SiHFP450A
O-247
18-Jul-08
mosfet k 2038
two transistor forward
IRFP450A
free transistor vishay
ld 91230
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SiHFI634G
Abstract: IRFI634G SiHFI634G-E3
Text: IRFI634G, SiHFI634G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance
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IRFI634G,
SiHFI634G
O-220
18-Jul-08
IRFI634G
SiHFI634G-E3
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IRF530 vishay
Abstract: SiHF530 IRF530PBF tr irf530 IRF530 SiHF530-E3 IRF530P
Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature
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IRF530,
SiHF530
O-220
O-220
18-Jul-08
IRF530 vishay
IRF530PBF
tr irf530
IRF530
SiHF530-E3
IRF530P
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IRFI540G
Abstract: SiHFI540G SiHFI540G-E3
Text: IRFI540G, SiHFI540G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating
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IRFI540G,
SiHFI540G
O-220
18-Jul-08
IRFI540G
SiHFI540G-E3
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IRFP17N50L
Abstract: SiHFP17N50L
Text: IRFP17N50L, SiHFP17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • SuperFast Body Diode Eliminates the Need For External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.28 Qg (Max.) (nC) 130 Qgs (nC) 33 Qgd (nC) 59 Configuration
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IRFP17N50L,
SiHFP17N50L
O-247
18-Jul-08
IRFP17N50L
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IRF9620
Abstract: SiHF9620 SiHF9620-E3 diode 18B
Text: IRF9620, SiHF9620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) (Ω) VGS = - 10 V Available • P-Channel 1.5 RoHS* Qg (Max.) (nC) 22 • Fast Switching Qgs (nC) 12 • Ease of Paralleling 10 • Simple Drive Requirements
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IRF9620,
SiHF9620
O-220
O-220
18-Jul-08
IRF9620
SiHF9620-E3
diode 18B
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irf520 mosfet
Abstract: SiHF520 IRF520 Power MOSFETs Application Notes irf520 SiHF520-E3 1IRF520
Text: IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature
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IRF520,
SiHF520
O-220
O-220
18-Jul-08
irf520 mosfet
IRF520
Power MOSFETs Application Notes irf520
SiHF520-E3
1IRF520
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irf830 datasheet
Abstract: SiHF830 IRF830 SiHF830-E3 any circuit using irf830 IRF830PBF
Text: IRF830, SiHF830 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration
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IRF830,
SiHF830
O-220
O-220
50lectual
18-Jul-08
irf830 datasheet
IRF830
SiHF830-E3
any circuit using irf830
IRF830PBF
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IRFI730G
Abstract: SiHFI730G SiHFI730G-E3
Text: IRFI730G, SiHFI730G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance
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IRFI730G,
SiHFI730G
O-220
18-Jul-08
IRFI730G
SiHFI730G-E3
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MS25081
Abstract: C1003 21EN322-RB MIL-PRF-8805 gpec m.s angle steel weight
Text: MICRO SWITCH F R E E P O RT ILL'N O 'S A O fV I S ION OF F CO. M FC- CO OC C A T A L O G LIS T IN G 21EN322-RB SWITCH-ENCLOSED U S A H O NEYW ELL » 192* CIRCUIT DIAGRAM OÛ oc I .375 DIA CM C\J .375 DIA X .12 WIDE CORROSION RESISTANT STEEL ROLLER MOUNTED 9 0 ° TO BUSHING
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OCR Scan
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PDF
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21EN322-RB
C10033695
F10040772
16jun08
2747IY9E98P
5/8-24-UNEF
2508IC6
MIL-PRF-8805
MS25081
C1003
21EN322-RB
gpec
m.s angle steel weight
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