IRFIBC40
Abstract: IRFIBC40GLC SiHFIBC40GLC SiHFIBC40GLC-E3 SiHFIBC40G
Text: IRFIBC40GLC, SiHFIBC40GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance
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IRFIBC40GLC,
SiHFIBC40GLC
O-220
18-Jul-08
IRFIBC40
IRFIBC40GLC
SiHFIBC40GLC-E3
SiHFIBC40G
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SiHFIBC40G
Abstract: No abstract text available
Text: IRFIBC40GLC, SiHFIBC40GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance
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Original
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PDF
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IRFIBC40GLC,
SiHFIBC40GLC
O-220
12-Mar-07
SiHFIBC40G
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SiHFIBC40G
Abstract: No abstract text available
Text: IRFIBC40GLC, SiHFIBC40GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance
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Original
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PDF
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IRFIBC40GLC,
SiHFIBC40GLC
O-220
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SiHFIBC40G
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SiHFIBC40G
Abstract: No abstract text available
Text: IRFIBC40GLC, SiHFIBC40GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance
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Original
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PDF
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IRFIBC40GLC,
SiHFIBC40GLC
O-220
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SiHFIBC40G
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SiHFIBC40G
Abstract: No abstract text available
Text: IRFIBC40GLC, SiHFIBC40GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance
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Original
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PDF
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IRFIBC40GLC,
SiHFIBC40GLC
O-220
11-Mar-11
SiHFIBC40G
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SiHFIBC40G
Abstract: No abstract text available
Text: IRFIBC40GLC, SiHFIBC40GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance
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Original
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IRFIBC40GLC,
SiHFIBC40GLC
O-220
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
SiHFIBC40G
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N 440
Abstract: AN609 IRFIBC40GLC SiHFIBC40GLC
Text: IRFIBC40GLC_RC, SiHFIBC40GLC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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IRFIBC40GLC
SiHFIBC40GLC
AN609,
31-May-10
N 440
AN609
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