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    IRFIBC40 Search Results

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    IRFIBC40 Price and Stock

    Vishay Siliconix IRFIBC40GPBF

    MOSFET N-CH 600V 3.5A TO220-3
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    DigiKey IRFIBC40GPBF Tube 1,362 1
    • 1 $2.63
    • 10 $2.63
    • 100 $1.7892
    • 1000 $1.75
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    ComSIT USA IRFIBC40GPBF 750
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    Vishay Siliconix IRFIBC40G

    MOSFET N-CH 600V 3.5A TO220-3
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    DigiKey IRFIBC40G Tube
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    Vishay Siliconix IRFIBC40GLC

    MOSFET N-CH 600V 3.5A TO220-3
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    Vishay Siliconix IRFIBC40GLCPBF

    MOSFET N-CH 600V 3.5A TO220-3
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    DigiKey IRFIBC40GLCPBF Tube 1,000
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    Vishay Intertechnologies IRFIBC40GPBF

    Trans MOSFET N-CH 600V 3.5A 3-Pin(3+Tab) TO-220 Full-Pak - Bulk (Alt: IRFIBC40GPBF)
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    Avnet Americas IRFIBC40GPBF Bulk 12 Weeks 1,000
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    Mouser Electronics IRFIBC40GPBF 1,289
    • 1 $2.63
    • 10 $2.63
    • 100 $1.79
    • 1000 $1.75
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    Quest Components IRFIBC40GPBF 7
    • 1 $3.48
    • 10 $2.9
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    TTI IRFIBC40GPBF Tube 1,000
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    TME IRFIBC40GPBF 834 1
    • 1 $1.91
    • 10 $1.67
    • 100 $1.48
    • 1000 $1.37
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    Find more IRFIBC40 price and stock on Findchips.com

    IRFIBC40 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRFIBC40 International Rectifier Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=3.5A) Scan PDF
    IRFIBC40G International Rectifier 600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Original PDF
    IRFIBC40G Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFIBC40G Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 3.5A TO220FP Original PDF
    IRFIBC40G International Rectifier HEXFET Power MOSFET Scan PDF
    IRFIBC40G International Rectifier Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=3.5A) Scan PDF
    IRFIBC40G International Rectifier HEXFET Power MOSFET Scan PDF
    IRFIBC40G Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFIBC40G Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    IRFIBC40G Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFIBC40GLC International Rectifier 600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Original PDF
    IRFIBC40GLC Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFIBC40GLC Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 3.5A TO220FP Original PDF
    IRFIBC40GLC International Rectifier HEXFET Power MOSFET Scan PDF
    IRFIBC40GLC International Rectifier HEXFET Power Mosfet Scan PDF
    IRFIBC40GLC Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFIBC40GLCPBF International Rectifier 600V Single N-Channel Lead-Free HEXFET Power MOSFET in a TO-220 FullPak package Original PDF
    IRFIBC40GLCPBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 3.5A TO220FP Original PDF
    IRFIBC40GPBF International Rectifier 600V Single N-Channel Lead-Free HEXFET Power MOSFET in a TO-220FullPAK package Original PDF
    IRFIBC40GPBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 3.5A TO220FP Original PDF

    IRFIBC40 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRFIBC40G_RC, SiHFIBC40G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF IRFIBC40G SiHFIBC40G AN609, 31-May-10

    IRFIBC40

    Abstract: TO-220 FULLPAK Package SiHFIBC40G
    Text: IRFIBC40G, SiHFIBC40G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • Isolated Package Low Thermal Resistance Sink to Lead Creepage Dist. = 4.8 mm High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Dynamic dV/dt Rating


    Original     		PDF IRFIBC40G, SiHFIBC40G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFIBC40 TO-220 FULLPAK Package

    Untitled

    Abstract: No abstract text available
    Text: PD - 94860 IRFIBC40GLCPbF • Lead-Free 12/03/03 Document Number: 91181 www.vishay.com 1 IRFIBC40GLCPbF Document Number: 91181 www.vishay.com 2 IRFIBC40GLCPbF Document Number: 91181 www.vishay.com 3 IRFIBC40GLCPbF Document Number: 91181 www.vishay.com 4 IRFIBC40GLCPbF


    Original     		PDF IRFIBC40GLCPbF O-220

    IRFIBC40

    Abstract: IRFIBC40GLC SiHFIBC40GLC SiHFIBC40GLC-E3 SiHFIBC40G
    Text: IRFIBC40GLC, SiHFIBC40GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance


    Original     		PDF IRFIBC40GLC, SiHFIBC40GLC O-220 18-Jul-08 IRFIBC40 IRFIBC40GLC SiHFIBC40GLC-E3 SiHFIBC40G

    SiHFIBC40G

    Abstract: No abstract text available
    Text: IRFIBC40G, SiHFIBC40G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • Isolated Package Low Thermal Resistance Sink to Lead Creepage Dist. = 4.8 mm High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Dynamic dV/dt Rating


    Original     		PDF IRFIBC40G, SiHFIBC40G O-220 12-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: PD - 94860 IRFIBC40GLCPbF • Lead-Free www.irf.com 1 12/03/03 IRFIBC40GLCPbF 2 www.irf.com IRFIBC40GLCPbF www.irf.com 3 IRFIBC40GLCPbF 4 www.irf.com IRFIBC40GLCPbF www.irf.com 5 IRFIBC40GLCPbF 6 www.irf.com IRFIBC40GLCPbF www.irf.com 7 IRFIBC40GLCPbF TO-220 Full-Pak Package Outline


    Original     		PDF IRFIBC40GLCPbF O-220

    marking vishay ir

    Abstract: No abstract text available
    Text: PD - 94857 IRFIBC40GPbF • Lead-Free Document Number: 91182 11/20/03 www.vishay.com 1 IRFIBC40GPbF Document Number: 91182 www.vishay.com 2 IRFIBC40GPbF Document Number: 91182 www.vishay.com 3 IRFIBC40GPbF Document Number: 91182 www.vishay.com 4 IRFIBC40GPbF


    Original     		PDF IRFIBC40GPbF O-220 12-Mar-07 marking vishay ir

    IRFIBC40G

    Abstract: SiHFIBC40G SiHFIBC40G-E3
    Text: IRFIBC40G, SiHFIBC40G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • Isolated Package Low Thermal Resistance Sink to Lead Creepage Dist. = 4.8 mm High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Dynamic dV/dt Rating


    Original     		PDF IRFIBC40G, SiHFIBC40G O-220 11-Mar-11 IRFIBC40G SiHFIBC40G-E3

    IRFIBC40G

    Abstract: SiHFIBC40G SiHFIBC40G-E3 81273
    Text: IRFIBC40G, SiHFIBC40G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • Isolated Package Low Thermal Resistance Sink to Lead Creepage Dist. = 4.8 mm High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Dynamic dV/dt Rating


    Original     		PDF IRFIBC40G, SiHFIBC40G O-220 18-Jul-08 IRFIBC40G SiHFIBC40G-E3 81273

    Untitled

    Abstract: No abstract text available
    Text: PD - 94857 IRFIBC40GPbF • Lead-Free Document Number: 91182 11/20/03 www.vishay.com 1 IRFIBC40GPbF Document Number: 91182 www.vishay.com 2 IRFIBC40GPbF Document Number: 91182 www.vishay.com 3 IRFIBC40GPbF Document Number: 91182 www.vishay.com 4 IRFIBC40GPbF


    Original     		PDF IRFIBC40GPbF O-220 08-Mar-07

    SiHFIBC40G

    Abstract: No abstract text available
    Text: IRFIBC40G, SiHFIBC40G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • Isolated Package Low Thermal Resistance Sink to Lead Creepage Dist. = 4.8 mm High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Dynamic dV/dt Rating


    Original     		PDF IRFIBC40G, SiHFIBC40G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SiHFIBC40G

    Abstract: No abstract text available
    Text: IRFIBC40GLC, SiHFIBC40GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance


    Original     		PDF IRFIBC40GLC, SiHFIBC40GLC O-220 12-Mar-07 SiHFIBC40G

    Untitled

    Abstract: No abstract text available
    Text: PD - 94860 IRFIBC40GLCPbF • Lead-Free www.irf.com 1 12/03/03 IRFIBC40GLCPbF 2 www.irf.com IRFIBC40GLCPbF www.irf.com 3 IRFIBC40GLCPbF 4 www.irf.com IRFIBC40GLCPbF www.irf.com 5 IRFIBC40GLCPbF 6 www.irf.com IRFIBC40GLCPbF www.irf.com 7 IRFIBC40GLCPbF TO-220 Full-Pak Package Outline


    Original     		PDF IRFIBC40GLCPbF O-220

    Untitled

    Abstract: No abstract text available
    Text: PD - 94860 IRFIBC40GLCPbF • Lead-Free 12/03/03 Document Number: 91181 www.vishay.com 1 IRFIBC40GLCPbF Document Number: 91181 www.vishay.com 2 IRFIBC40GLCPbF Document Number: 91181 www.vishay.com 3 IRFIBC40GLCPbF Document Number: 91181 www.vishay.com 4 IRFIBC40GLCPbF


    Original     		PDF IRFIBC40GLCPbF O-220

    SiHFIBC40G

    Abstract: No abstract text available
    Text: IRFIBC40GLC, SiHFIBC40GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance


    Original     		PDF IRFIBC40GLC, SiHFIBC40GLC O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SiHFIBC40G

    SiHFIBC40G

    Abstract: No abstract text available
    Text: IRFIBC40G, SiHFIBC40G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • Isolated Package Low Thermal Resistance Sink to Lead Creepage Dist. = 4.8 mm High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Dynamic dV/dt Rating


    Original     		PDF IRFIBC40G, SiHFIBC40G O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: PD - 94857 IRFIBC40GPbF • Lead-Free www.irf.com 1 11/20/03 IRFIBC40GPbF 2 www.irf.com IRFIBC40GPbF www.irf.com 3 IRFIBC40GPbF 4 www.irf.com IRFIBC40GPbF www.irf.com 5 IRFIBC40GPbF 6 www.irf.com IRFIBC40GPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters inches


    Original     		PDF IRFIBC40GPbF O-220

    Untitled

    Abstract: No abstract text available
    Text: PD - 94857 IRFIBC40GPbF • Lead-Free www.irf.com 1 11/20/03 IRFIBC40GPbF 2 www.irf.com IRFIBC40GPbF www.irf.com 3 IRFIBC40GPbF 4 www.irf.com IRFIBC40GPbF www.irf.com 5 IRFIBC40GPbF 6 www.irf.com IRFIBC40GPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters inches


    Original     		PDF IRFIBC40GPbF O-220

    SiHFIBC40G

    Abstract: No abstract text available
    Text: IRFIBC40GLC, SiHFIBC40GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance


    Original     		PDF IRFIBC40GLC, SiHFIBC40GLC O-220 11-Mar-11 SiHFIBC40G

    SiHFIBC40G

    Abstract: No abstract text available
    Text: IRFIBC40GLC, SiHFIBC40GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance


    Original     		PDF IRFIBC40GLC, SiHFIBC40GLC O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SiHFIBC40G

    N 440

    Abstract: AN609 IRFIBC40GLC SiHFIBC40GLC
    Text: IRFIBC40GLC_RC, SiHFIBC40GLC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF IRFIBC40GLC SiHFIBC40GLC AN609, 31-May-10 N 440 AN609

    IRF1Bc40g

    Abstract: IRF1BC40 IRF1BC40GLC SAJ 220 IRFIBC40GLC 7z mosfet ID37A
    Text: PD-9.1211 International S Rectifier IRFIBC40GLC HEXFET Pow er M O SFET Isolated Package High Voltage lsolatlon= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance V DSS = 600V R DS on = 1 In = 3.5A D escription Third Generation HEXFETs from International Rectifier provide the designer


    OCR Scan     		PDF IRFIBC40GLC T0-220 O-220 irfi840g IRF1Bc40g IRF1BC40 IRF1BC40GLC SAJ 220 IRFIBC40GLC 7z mosfet ID37A

    Untitled

    Abstract: No abstract text available
    Text: PD-9.1211 International Rectifier IRFIBC40GLC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 3 0 V V g s Rating Isolated Package High Voltage lsolation= 2.5KVRMS ® Sink to Lead Creepage Dist.= 4.8mm Repetitive Avalanche Rated


    OCR Scan     		PDF IRFIBC40GLC D-6380

    IRFIBC40G

    Abstract: RD472 IRFIBC40 600V N MOSFET T0-220
    Text: International S Rectifier PD-9.852 IRFIBC40G HEXFET Power MOSFET • • • • • Isolateci Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance Vdss - 600V R DS on = 1 -2 i ^ lD = 3.5A


    OCR Scan     		PDF IRFIBC40G O-220 IRFIBC40G RD472 IRFIBC40 600V N MOSFET T0-220