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    SIHF730 Price and Stock

    Vishay Intertechnologies SIHF730AS-GE3

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SIHF730AS-GE3 900
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    Vishay Intertechnologies SIHF730STRL-GE3

    Transistor: N-MOSFET; unipolar; 400V; 3.5A; Idm: 22A; 74W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SIHF730STRL-GE3 1
    • 1 $1.26
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    Vishay Intertechnologies SIHF730AL-GE3

    MOSFET N-CHANNEL 400V (Alt: SIHF730AL-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    EBV Elektronik SIHF730AL-GE3 14 Weeks 50
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    Vishay Intertechnologies SIHF730ASTRR-GE3

    MOSFET N-CHANNEL 400V (Alt: SIHF730ASTRR-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    EBV Elektronik SIHF730ASTRR-GE3 14 Weeks 800
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    SIHF730 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    flyback xfmr 3.5 mh

    Abstract: No abstract text available
    Text: IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF IRF730A, SiHF730A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 flyback xfmr 3.5 mh

    flyback xfmr 3.5 mh

    Abstract: No abstract text available
    Text: IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF IRF730A, SiHF730A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 flyback xfmr 3.5 mh

    Untitled

    Abstract: No abstract text available
    Text: IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF IRF730A, SiHF730A 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    AN609

    Abstract: IRF730 SiHF730
    Text: IRF730_RC, SiHF730_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRF730 SiHF730 AN609, 12-Mar-10 AN609

    7386

    Abstract: AN609 IRF730AL IRF730AS SiHF730AL SiHF730AS 90259
    Text: IRF730AS_RC, IRF730AL_RC, SiHF730AS_RC, SiHF730AL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF IRF730AS IRF730AL SiHF730AS SiHF730AL AN609, 12-Mar-10 7386 AN609 90259

    IRF730

    Abstract: SiHF730 SiHF730-E3
    Text: IRF730, SiHF730 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.7 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF730, SiHF730 O-220 O-220 50lectual 18-Jul-08 IRF730 SiHF730-E3

    flyback xfmr 3.5 mh

    Abstract: No abstract text available
    Text: IRF730AS, SiHF730AS, IRF730AL, SiHF730AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF IRF730AS, SiHF730AS IRF730AL, SiHF730AL O-262) O-263) 2002/95/EC 11-Mar-11 flyback xfmr 3.5 mh

    flyback xfmr 3.5 mh

    Abstract: No abstract text available
    Text: IRF730AS, SiHF730AS, IRF730AL, SiHF730AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF IRF730AS, SiHF730AS IRF730AL, SiHF730AL O-262) O-263) 2002/95/EC 11-Mar-11 flyback xfmr 3.5 mh

    Untitled

    Abstract: No abstract text available
    Text: IRF730S, SiHF730S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original     		PDF IRF730S, SiHF730S 2002/95/EC O-263) O-263 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRF730, SiHF730 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.7 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF730, SiHF730 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 5.5 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Qg (Max.) (nC) 22 Qgs (nC)


    Original     		PDF IRF730A, SiHF730A AN1001) O-220 12-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: IRF730S, SiHF730S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original     		PDF IRF730S, SiHF730S 2002/95/EC O-263) 11-Mar-11

    flyback xfmr 3.5 mh

    Abstract: No abstract text available
    Text: IRF730AS, SiHF730AS, IRF730AL, SiHF730AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 400 RDS(on) (Max.) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration


    Original     		PDF IRF730AS, SiHF730AS IRF730AL, SiHF730AL O-262) O-263) 12-Mar-07 flyback xfmr 3.5 mh

    IRF730A

    Abstract: SiHF730A-E3 SiHF730A flyback xfmr 3.5 mh
    Text: IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF IRF730A, SiHF730A O-220 18-Jul-08 IRF730A SiHF730A-E3 flyback xfmr 3.5 mh

    Untitled

    Abstract: No abstract text available
    Text: IRF730, SiHF730 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.7 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF730, SiHF730 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    3271

    Abstract: 9571 AN609 IRF730S SiHF730S
    Text: IRF730S_RC, SiHF730S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRF730S SiHF730S AN609, 12-Mar-10 3271 9571 AN609

    Untitled

    Abstract: No abstract text available
    Text: IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF IRF730A, SiHF730A 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRF730, SiHF730 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.7 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF730, SiHF730 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    IRF730A

    Abstract: IRF730AL IRF730AS SiHF730AL SiHF730AS SiHF730AS-E3 flyback xfmr 3.5 mh
    Text: IRF730AS, SiHF730AS, IRF730AL, SiHF730AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 400 RDS(on) (Max.) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration


    Original     		PDF IRF730AS, SiHF730AS IRF730AL, SiHF730AL O-263) O-262) 18-Jul-08 IRF730A IRF730AL IRF730AS SiHF730AS-E3 flyback xfmr 3.5 mh

    Untitled

    Abstract: No abstract text available
    Text: IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF IRF730A, SiHF730A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    AN1001

    Abstract: IRF730A SiHF730A SiHF730A-E3
    Text: IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 5.5 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Qg (Max.) (nC) 22 Qgs (nC)


    Original     		PDF IRF730A, SiHF730A AN1001) O-220 18-Jul-08 AN1001 IRF730A SiHF730A-E3

    IRF730AL

    Abstract: IRF730AS SiHF730AL SiHF730AS SiHF730AS-E3 SiHFL014T-E3 flyback xfmr 3.5 mh
    Text: IRF730AS, SiHF730AS, IRF730AL, SiHF730AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 400 RDS(on) (Max.) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration


    Original     		PDF IRF730AS, SiHF730AS IRF730AL, SiHF730AL O-262) O-263) 18-Jul-08 IRF730AL IRF730AS SiHF730AS-E3 SiHFL014T-E3 flyback xfmr 3.5 mh

    Untitled

    Abstract: No abstract text available
    Text: IRF730S, SiHF730S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original     		PDF IRF730S, SiHF730S 2002/95/EC O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRF730

    Abstract: SiHF730 SiHF730-E3
    Text: IRF730, SiHF730 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.7 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF730, SiHF730 2002/95/EC O-220AB O-220AB 11-Mar-11 IRF730 SiHF730-E3