IRFP17N50L
Abstract: SiHFP17N50L
Text: IRFP17N50L, SiHFP17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • SuperFast Body Diode Eliminates the Need For External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.28 Qg (Max.) (nC) 130 Qgs (nC) 33 Qgd (nC) 59 Configuration
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Original
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PDF
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IRFP17N50L,
SiHFP17N50L
O-247
18-Jul-08
IRFP17N50L
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Untitled
Abstract: No abstract text available
Text: IRFP17N50L, SiHFP17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • SuperFast Body Diode Eliminates the Need For External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.28 Qg (Max.) (nC) 130 Qgs (nC) 33 Qgd (nC) 59 Configuration
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Original
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PDF
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IRFP17N50L,
SiHFP17N50L
2002/95/EC
O-247AC
11-Mar-11
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99AB
Abstract: No abstract text available
Text: IRFP17N50L, SiHFP17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • SuperFast Body Diode Eliminates the Need For External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.28 Qg (Max.) (nC) 130 Qgs (nC) 33 Qgd (nC) 59 Configuration
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Original
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PDF
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IRFP17N50L,
SiHFP17N50L
2002/95/EC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
99AB
|
Untitled
Abstract: No abstract text available
Text: IRFP17N50L, SiHFP17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • SuperFast Body Diode Eliminates the Need For External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.28 Qg (Max.) (nC) 130 Qgs (nC) 33 Qgd (nC) 59 Configuration
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Original
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PDF
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IRFP17N50L,
SiHFP17N50L
2002/95/EC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: IRFP17N50L, SiHFP17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • SuperFast Body Diode Eliminates the Need For External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.28 Qg (Max.) (nC) 130 Qgs (nC) 33 Qgd (nC) 59 Configuration
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Original
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PDF
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IRFP17N50L,
SiHFP17N50L
O-247
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: IRFP17N50L, SiHFP17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • SuperFast Body Diode Eliminates the Need For External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.28 Qg (Max.) (nC) 130 Qgs (nC) 33 Qgd (nC) 59 Configuration
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Original
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PDF
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IRFP17N50L,
SiHFP17N50L
2002/95/EC
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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IRFP17N50L
Abstract: SiHFP17N50L 99AB
Text: IRFP17N50L, SiHFP17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • SuperFast Body Diode Eliminates the Need For External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.28 Qg (Max.) (nC) 130 Qgs (nC) 33 Qgd (nC) 59 Configuration
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Original
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PDF
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IRFP17N50L,
SiHFP17N50L
O-247
18-Jul-08
IRFP17N50L
99AB
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99AB
Abstract: No abstract text available
Text: IRFP17N50L, SiHFP17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • SuperFast Body Diode Eliminates the Need For External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.28 Qg (Max.) (nC) 130 Qgs (nC) 33 Qgd (nC) 59 Configuration
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Original
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PDF
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IRFP17N50L,
SiHFP17N50L
2002/95/EC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
99AB
|
Untitled
Abstract: No abstract text available
Text: IRFP17N50L_RC, SiHFP17N50L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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IRFP17N50L
SiHFP17N50L
AN609,
07-Jun-10
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