Untitled
Abstract: No abstract text available
Text: Si6953DQ Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 20 rDS(on) (W) ID (A) 0.17 @ VGS = –10 V "1.9 0.32 @ VGS = –4.5 V "1.3 S1 S2 TSSOP-8 D1 S1 S1 G1 1 2 D 8 Si6953DQ 7 3 6 4 5 D2 S2 S2 G2 G1 G2 Top View D1 D2 P-Channel MOSFET
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Si6953DQ
S-47958â
15-Apr-96
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Si4450DY
Abstract: No abstract text available
Text: Si4450DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V 60 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V "7.5 0.03 @ VGS = 6.0 V "6.5 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
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Si4450DY
S-47958--Rev.
15-Apr-96
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Si6953DQ
Abstract: No abstract text available
Text: Si6953DQ Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.17 @ VGS = –10 V "1.9 0.32 @ VGS = –4.5 V "1.3 S1 S2 TSSOP-8 D1 S1 S1 G1 1 2 D 8 Si6953DQ 7 3 6 4 5 D2 S2 S2 G2 G1 G2 Top View D1 D2 P-Channel MOSFET P-Channel MOSFET
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Si6953DQ
S-47958--Rev.
15-Apr-96
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Si6552DQ
Abstract: No abstract text available
Text: Si6552DQ Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 20 P-Channel –12 rDS(on) (W) ID (A) 0.08 @ VGS = 4.5 V "2.8 0.11 @ VGS = 2.5 V "2.1 0.1 @ VGS = –4.5 V "2.5 0.18 @ VGS = –2.5 V "1.9 D1 S2 TSSOP-8 D1 S1 S1 G1
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Si6552DQ
S-47958--Rev.
15-Apr-96
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Si4435DY
Abstract: No abstract text available
Text: Si4435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.02 @ VGS = –10 V "8.0 0.035 @ VGS = –4.5 V "6.0 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
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Si4435DY
S-47958--Rev.
15-Apr-96
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SI4431DY
Abstract: No abstract text available
Text: Si4431DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.040 @ VGS = –10 V "5.8 0.070 @ VGS = –4.5 V "4.5 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
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Si4431DY
S-47958--Rev.
15-Apr-96
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BF550R
Abstract: BF550 marking A1 TRANSISTOR marking LA
Text: BF550/BF550R Silicon PNP HF Transistor Applications RF-IF amplifier specially for thick and thin film circuits. Features D High power gain D Low noise figure 1 2 1 3 3 94 9280 BF550 Marking: LA Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter 2 95 10527
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BF550/BF550R
BF550
BF550R
D-74025
15-Apr-96
marking A1 TRANSISTOR
marking LA
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Si4435DY
Abstract: No abstract text available
Text: Si4435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.02 @ VGS = –10 V "8.0 0.035 @ VGS = –4.5 V "6.0 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
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Si4435DY
S-47958--Rev.
15-Apr-96
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Si6447DQ
Abstract: No abstract text available
Text: Si6447DQ P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.09 @ VGS = –10 V "3.2 0.16 @ VGS = –4.5 V "2.4 S* TSSOP-8 D S S G 1 D 2 8 7 Si6447DQ 3 6 4 5 D S S D G *Source Pins 2, 3, 6 and 7 must be tied common. Top View
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Si6447DQ
S-47958--Rev.
15-Apr-96
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Si6943DQ
Abstract: No abstract text available
Text: Si6943DQ Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –12 rDS(on) (W) ID (A) 0.10 @ VGS = –4.5 V "2.5 0.18 @ VGS = –2.5 V "1.9 S TSSOP-8 D1 S1 S1 G1 1 D 2 8 7 Si6943DQ 3 6 4 5 G D2 S2 S2 G2 Top View D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
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Si6943DQ
S-47958--Rev.
15-Apr-96
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Si9426DY
Abstract: No abstract text available
Text: Si9426DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.0135 @ VGS = 4.5 V "10 0.0160 @ VGS = 2.5 V "9.3 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
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Si9426DY
S-47958--Rev.
15-Apr-96
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Si6954DQ
Abstract: No abstract text available
Text: Si6954DQ Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.065 @ VGS = 10 V "3.9 0.095 @ VGS = 4.5 V "3.1 D1 D2 TSSOP-8 D1 S1 S1 G1 1 2 D 8 7 Si6954DQ 3 6 4 5 D2 S2 S2 G2 G1 G2 Top View S1 S2 N-Channel MOSFET N-Channel MOSFET
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Si6954DQ
Diode10
S-47958--Rev.
15-Apr-96
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Si4450DY
Abstract: No abstract text available
Text: Si4450DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V 60 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V "7.5 0.03 @ VGS = 6.0 V "6.5 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
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Si4450DY
S-47958--Rev.
15-Apr-96
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si9405dy
Abstract: Si6447DQ Si9430DY
Text: Si9405DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.10 @ VGS = –10 V "4.3 0.16 @ VGS = –4.5 V "3.4 Recommended upgrade: Si9430DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6447DQ S S SO-8 NC 1 8
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Si9405DY
Si9430DY
Si6447DQ
S-47958--Rev.
15-Apr-96
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Si9947DY
Abstract: Si4947DY Si4953DY Si6955DQ si6955
Text: Si9947DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.10 @ VGS = –10 V "3.5 0.19 @ VGS = –4.5 V "2.5 Recommended upgrade: Si4947DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6955DQ
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Si9947DY
Si4947DY
Si4953DY
Si6955DQ
S-47958--Rev.
15-Apr-96
si6955
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Si4431DY
Abstract: No abstract text available
Text: Si4431DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.040 @ VGS = –10 V "5.8 0.070 @ VGS = –4.5 V "4.5 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
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Si4431DY
S-47958--Rev.
15-Apr-96
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Si4412DY
Abstract: No abstract text available
Text: Si4412DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.028 @ VGS = 10 V "7.0 0.042 @ VGS = 4.5 V "5.8 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S S S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
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Si4412DY
S-47958--Rev.
15-Apr-96
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Si6447DQ
Abstract: No abstract text available
Text: Si6447DQ P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.09 @ VGS = –10 V "3.2 0.16 @ VGS = –4.5 V "2.4 S* TSSOP-8 D S S G 1 D 2 8 7 Si6447DQ 3 6 4 5 D S S D G *Source Pins 2, 3, 6 and 7 must be tied common. Top View
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Si6447DQ
S-47958--Rev.
15-Apr-96
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Si4936DY
Abstract: Si6956DQ Si9936DY Si9956DY
Text: Si9956DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.10 @ VGS = 10 V "3.5 0.20 @ VGS = 4.5 V "2.0 Recommended upgrade: Si4936DY or Si9936DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6956DQ D1 D1 D2 D2
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Si9956DY
Si4936DY
Si9936DY
Si6956DQ
S-47958--Rev.
15-Apr-96
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SI9959DY
Abstract: SI9945 Si9945DY SI9959
Text: Si9959DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 60 rDS(on) (W) ID (A) 0.30 @ VGS = 10 V "2.0 0.50 @ VGS = 5 V "0.6 For higher performance see Si9945DY D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 N-Channel MOSFET
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Si9959DY
Si9945DY
S-47958--Rev.
15-Apr-96
SI9945
SI9959
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SI6435DQ
Abstract: No abstract text available
Text: Tem ic SÌ6435DQ S e m i c o n d u c t o r s P-Channel Enhancement-Mode MOSFET Product Summary VDS V r DS(on) ( ^ ) I d (A) 0.040 @ VGs = -1 0 V ± 4 .5 0.070 @ VGS = -4.5 V ± 3 .4 30 T SSO P-8 n! *Source Pins 2, 3, 6 and 7 must be tied common. Top View
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6435DQ
S-47958--
15-Apr-96
TSSOP-8/-28
SI6435DQ
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Untitled
Abstract: No abstract text available
Text: Tem ic SÌ4936DY S e m i c o n d u c t o r s Dual N-Channel Enhancement-Mode MOSFET Product Summary V d s V 30 rDS(on) (Q) I d (A) 0.037 @ VGS = 10 V ±5.8 0.055 @ VGS = 4.5 V ±4.7 u D, SO-8 IÎ 3l O u D 2 Ö2 D! >| N -C h a n n el M O S F E T G2 c ji N -C h a n n el M O S F E T
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4936DY
S-47958--
15-Apr-96
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SO-8 gs 069
Abstract: No abstract text available
Text: T e m ic SÌ9945DY Semiconductors Dual N-Channel Enhancement-Mode MOSFET Product Summary V DS V 60 rDS(on) (fi) I d (A) 0.10 @ VGS = 10 V ±3.3 0.20 @ VGS = 4.5 V ±2.5 Di u D2 D2 D! SO-8 G, Top View G2 Ô Ô Si S2 N-Channel MOSFET N-Channel MOSFET Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)
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9945DY
S-47958--Rev.
15-Apr-96
002D474
S2SM735
0017flin
SO-8 gs 069
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. ,19 LOC ALL RIGHTS RESERVED. AF DIST 50 R EV I S IO N S LTR DESCRIPTION DATE REVISED PER 0G1A-0021-99 DUN 20FEB1999 APVD MSF KAR 4. 57 [. 1 80] D D 1 . 02 [.040]
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0G1A-0021-99
20FEB1999
23FEB95
/home/amp02644/edmmod_
15APR9Ã
15APR96
002032C
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