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    SI7660CJ

    Abstract: SI7660DJ Si7660 SI7660DY Si7660s VL VM VH lithium si-7660dj
    Text: Si7660 Siliconix A M em ber o f the T b m ic G roup Switched-Capacitor Voltage Converter Features Benefits Applications • 99.7% Open Circuit Voltage Conversion Efficiency • 98% Power Efficiency • Operating Voltage Range of 1.5 to 10 V • Requires Only Two Capacitors


    OCR Scan     		PDF Si7660 RS-232 P-32167--Rev. S2SM735 0017flin SI7660CJ SI7660DJ Si7660 SI7660DY Si7660s VL VM VH lithium si-7660dj

    Untitled

    Abstract: No abstract text available
    Text: SI9730 Vishay Siliconix Dual-Cell Lithium Ion Battery Control 1C FEATURES • • • • • • Over-Charge Protection Over-Discharge Protection Short Circuit Current Limiting Battery Open-Circuit Center Tap Protection Cell Voltage Balancing Undervoltage Lockout


    OCR Scan     		PDF SI9730 Si9730 S-60752-- 05-Apr-99 S2SM735 0017flin

    si9710

    Abstract: Si9710CY
    Text: Tem ic SÌ9710CY Siliconix PCMCIA Interface Switch Features • Single SO-16 Package • CMOS Inputs with Hysteresis • Extremely Low Rqn • Reverse Blocking Switches • HiZ Outputs in the Off-State • Low Power Consumption • Safe Power-Up Description


    OCR Scan     		PDF 9710CY SO-16 9710CY pow31 S2SM735 0017flin si9710 Si9710CY

    SO-8 gs 069

    Abstract: No abstract text available
    Text: T e m ic SÌ9945DY Semiconductors Dual N-Channel Enhancement-Mode MOSFET Product Summary V DS V 60 rDS(on) (fi) I d (A) 0.10 @ VGS = 10 V ±3.3 0.20 @ VGS = 4.5 V ±2.5 Di u D2 D2 D! SO-8 G, Top View G2 Ô Ô Si S2 N-Channel MOSFET N-Channel MOSFET Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)


    OCR Scan     		PDF 9945DY S-47958--Rev. 15-Apr-96 002D474 S2SM735 0017flin SO-8 gs 069

    Untitled

    Abstract: No abstract text available
    Text: Si4965DY VISH A Y Siliconix Dual P-Channel 1.8-V G-S MOSFET New Product S2 Q Si Q SO-8 6 6 □i D, P-Channel MOSFET 6 6 D2 D2 P-Channel MOSFET ABSOLUTE M AXIMUM RATINGS (TA = 25° C UNLESS OTHERWISE NOTED) P A R A M ETER SYM BOL Drain-Source Voltage L IM IT


    OCR Scan     		PDF Si4965DY S2SM735 DD17flflT

    Untitled

    Abstract: No abstract text available
    Text: _ Si4882DY VISHAY Vishay Siliconix New Product N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY Vd s r D S o n ( ^ ) I d (A ) 0.0105 @ VGS = 10 V ±11 0.0205 @ VGS = 4.5 V ±8 (V ) 30 1 D D 9 | S O -8 D


    OCR Scan     		PDF Si4882DY S2SM735 DD17flflT

    Untitled

    Abstract: No abstract text available
    Text: Si4416DY VISHAY Vishay Siliconix N-Channel 30-V D-S MOSFET New Product PRODUCT SUM M ARY v „s (V) r d s (ON) (q 1 lD (A) 0.018 @ V GS = 10 V ±9 .0 0.028 @ VGS = 4.5 V ±7 .3 30 9° ' D D D D SO-8 6 s N-Channel MOSFET A B S O L U T E M A X IM U M R A TIN G S (TA = 2 5 ° C U N LE S S O T H E R W IS E N O TED )


    OCR Scan     		PDF Si4416DY S2SM735 DD17flflT

    Untitled

    Abstract: No abstract text available
    Text: Tem ic SÌ9407DY Semiconductors P-Channel Enhancement-Mode MOSFET Product Summary VDs V n>S(on) (£2) 0.150 @ VGS = -10 V 0.240 @ Vos = -4.5 V -60 I d (A) ±3.0 ±2.4 sss in SO-8 'n T mi XI X ID S IX S IX s IX H G [T Top View D DD D P-Channel MOSFET Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)


    OCR Scan     		PDF 9407DY S-47958--Rev. 15-Apr-96 A254735 S2SM735 0017flin

    Untitled

    Abstract: No abstract text available
    Text: Tem ic SÌ9405DY Se m ic o n d u c to r s P-Channel Enhancement-Mode MOSFET Product Summary V d s V rDS(on) (Q ) 20 I d (A) 0.10 @ VGS = -1 0 V ±4.3 0.16 @ Vc s = -4.5 V ±3.4 Recommended upgrade: Si9430DY Lower profile/smaller size— see LITE FOOT equivalent: Si6447DQ


    OCR Scan     		PDF 9405DY Si9430DY Si6447DQ S-47958-- 15-Apr-96 S2SM735 0017flin

    Untitled

    Abstract: No abstract text available
    Text: Tem ic Si4936DY Semiconductors Dual N-Channel 30-V D-S Rated MOSFET Product Sum m ary V D S (V ) r DS(on) (£2) I d (A ) 0.037 @ V Gs = 10 V ± 5 .8 0.055 @ V Gs = 4.5 V ± 4 .7 30 Di D i Q Q D2 D2 O O 6 Si 6 S2 SO -8 |X IX S2 X XI °i X 1 °i XI d2 G2 | 4


    OCR Scan     		PDF Si4936DY S-49532â 02-Feb-98 S2SM735 DD17flflT

    Untitled

    Abstract: No abstract text available
    Text: Si9428DY V1SHAY Siliconix N-Channel 2.5-V G-S MOSFET New Product PRODUCT SUMMARY VDS (V) r DS(ON) (& ) Id (A) 0.03 @ VGS = 4.5 V ±6 0.04 @ VGS = 2.5 V ±5 .2 20 Di D, O Q SO-8 6 Si N-Channel MOSFET ABSOLUTE M AXIMUM RATINGS (TA = 25° C UNLESS OTHERWISE NOTED)


    OCR Scan     		PDF Si9428DY S2SM735 DD17flflT

    Untitled

    Abstract: No abstract text available
    Text: _ Si4884DY VISHAY Vishay Siliconix New Product N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY Vd s V r DS(on) (£2) I d (A ) 0.0105 @ VGS = 10 V ±12 0.0165 @ VGS = 4.5 V ±10 oS 30 D D D D S O -8 A B S O LU TE M A X IM U M RA TIN G S (TA = 2 5 C U N LE S S O TH E R W IS E NO TED)


    OCR Scan     		PDF Si4884DY S2SM735 DD17flflT

    Untitled

    Abstract: No abstract text available
    Text: Si4927DY V1SHAY Siliconix Dual P-Channel 30-V D-S MOSFET New Product PRODUCT SUMMARY VDS (V) r DS(ON) (& ) Id (A) 0.028 @ VGS = —10 V ±7 .4 0.045 @ VGS = —4.5 V ±5 .8 -3 0 1 ° ' Si S2 O Q SO-8 6 6 □i D, P-Channel MOSFET 6 6 D2 D2 P-Channel MOSFET


    OCR Scan     		PDF Si4927DY S2SM735 DD17flflT

    Untitled

    Abstract: No abstract text available
    Text: Tem ic Si9434ADY Semiconductors Single P-Channel, 2.5-V G-S Rated MOSFET Product Sum m ary VDS(V) 20 rDS(on) (Q) 0.033 @ VGs = - 4.5 V 0.050 @ VGs = - 2.5 V I d (A) ± 6.9 ± 5.6 sss O O P SO-8 D D D D P-Channel MOSFET Absolute M axim um Ratings (Ta = 25°C Unless Otherwise Noted)


    OCR Scan     		PDF Si9434ADY 150BMic S2SM735 DD17flflT

    Untitled

    Abstract: No abstract text available
    Text: Si4967DY V1SHAY Siliconix Dual P-Channel 1.8-V G-S MOSFET New Product S2 Q Si o SO-8 6 6 □i D, P-Channel MOSFET 6 6 D2 D2 P-Channel MOSFET ABSOLUTE M AXIMUM RATINGS (TA = 25° C UNLESS OTHERWISE NOTED) P A R A M ETER SYM BOL L IM IT Drain-Source Voltage


    OCR Scan     		PDF Si4967DY

    9915 H

    Abstract: si9905 si9912
    Text: SILICONIX INC HWSÏÏSHi 33E J> WÊ Ô254735 0Glbl37 3 « S I X Si9905/Si9912/Si9915 Off Line Voltage Regulators 58-lN-O FEATURES APPLICATIONS END PRODUCTS • Line Regulation ± 2 % @ 50-450 V • Load Regulation ± 1 % @ 0-20 V • Motor Drives • Power Supplies


    OCR Scan     		PDF 0Glbl37 Si9905/Si9912/Si9915 58-lN-O SI9905/SI9912/S19915 S2SM735 0017flin 9915 H si9905 si9912

    70003 fb

    Abstract: transistor 70003 fb
    Text: SÌ9105 Vishay Siliconix 1-W High-Voltage Switchmode Regulator FEATURES • CCITT Compatible • Current-Mode Control • Low Power Consumption less than 5 mW • 10- to 120-V Input Range • 200-V, 250-mA MOSFET • Internal Start-Up Circuit • Current-Mode Control


    OCR Scan     		PDF 250-mA Si9105 S-60752-- 05-Apr-99 S2SM735 0017flin 70003 fb transistor 70003 fb

    Untitled

    Abstract: No abstract text available
    Text: Si4467DY V1SHAY Siliconix P-Channel 1.8-V G-S MOSFET New Product s s s SO-8 D D D D P-Channel MOSFET ABSOLUTE M AXIMUM RATINGS (TA = 25° C UNLESS OTHERWISE NOTED) SYMBOL LIMIT Drain-Source Voltage PARAMETER V DS -1 2 Gate-Source Voltage VGS ±8 UNIT V Ta = 25°C


    OCR Scan     		PDF Si4467DY S2SM735 DD17flflT

    Untitled

    Abstract: No abstract text available
    Text: Si4542DY VISHAY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET PRODUCT SUM M AR Y VDS (V) N-Channel P-Channel r DS(ON) (&) I d (A) 0.025 @ V GS = 10 V ±6 .9 0.035 @ VGS = 4.5 V ±5 .8 0.032 @ VGS = —10 V ±6.1 0.045 @ V GS = -4 .5 V ±5.1 30 9° '


    OCR Scan     		PDF Si4542DY 15ision S2SM735 DD17flflT

    Untitled

    Abstract: No abstract text available
    Text: Tem ic SÌ9902DY S e m i co n d u c t o r s Asymmetrical Dual N-Channel Enhancement-Mode MOSFET Product Summary fDS on ( ^ ) I d (A) 0.07 @ VGs = 4.5 V ± 3 .0 0.09 @ VGs = 2.5 V ±2.1 0.03 @ VGS = 4.5 V ±6.9 0.035 @ VGs = 2.5 V ± 4.9 V d s (V) N-Channel 1


    OCR Scan     		PDF 9902DY DQ213SG S-46755-- 15-Jan-96 S2SM735 0017flin

    Untitled

    Abstract: No abstract text available
    Text: Tem ic SÌ9944DY S e m i c o n d u c t o r s Dual N-Channel Enhancement-Mode MOSFET Product Summary V d s V 240 r D S(on) ( ^ ) I d (A ) 6 @ V GS = 10 V ± 0 .4 8 @ V GS = 4 .5 V ± 0 .3 Di Di Q Q D2 D2 Q Q SO-8 G2 O Si Top View <JÌ o S2 N-Channel MOSFET


    OCR Scan     		PDF 9944DY S-50052--Rev. 08-Nov-96 S2SM735 0017flin

    Untitled

    Abstract: No abstract text available
    Text: Tem ic SÌ9955DY S e m ic on duc to rs Dual N-Channel Enhancement-Mode MOSFET Product Summary V DS V rDS(on)(ß) Id (A) 50 0.13 @ VGS= 10V 0.20 @ VGS = 4.5V ± 3.0 ± 1.5 Recommended upgrade: SÌ9945DY Di D, D2 D2 V SO-8 Si I X X I Di Gi I X s2 X X D' ~6~1 D2


    OCR Scan     		PDF 9955DY 9945DY S-47958--Rev. 15-Apr-96 S2SM735 0017flin

    SI9911

    Abstract: No abstract text available
    Text: Si9911/Si9914 SA Member ilicofotheTEM n ix ic Group Adaptive High-Side Power MOSFET Driver Features • Latching Inputs • Bootstrap and Charge Pump Compatible • Undervoltage Protected • Short Circuit Protected • dv/dt Control • Low Quiescent Current


    OCR Scan     		PDF Si9911/Si9914 Si9911 Si9914 Si9901 Si9901. AA08941-- S2SM735

    Untitled

    Abstract: No abstract text available
    Text: Si9422DY VISH A Y Siliconix N-Channel Reduced Qg, Fast Switching MOSFET New Product D Q SO-8 6 s N-Channel MOSFET A B S O L U T E M A X IM U M R A T IN G S TA = 2 5 ° C U N LE S S O T H E R W IS E N O TED SYM BOL L IM IT Drain-Source Voltage PARAM ETER


    OCR Scan     		PDF Si9422DY S2SM735 DD17flflT