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    SI9936DY Search Results

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    SI9936DY Price and Stock

    NXP Semiconductors SI9936DY,518

    MOSFET 2N-CH 30V 5A 8SO
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    DigiKey SI9936DY,518 Reel
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    Vishay Siliconix SI9936DY-T1

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    Bristol Electronics SI9936DY-T1 2,500 7
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    SI9936DY-T1 1,633
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    Quest Components SI9936DY-T1 84,405
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    SI9936DY-T1 2,000
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    Vishay Siliconix SI9936DY

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    Bristol Electronics SI9936DY 176
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    SI9936DY 48
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    Quest Components SI9936DY 818
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    SI9936DY 240
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    SI9936DY 160
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    SI9936DY 117
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    Fairchild Semiconductor Corporation SI9936DY

    MOSFET Transistor, Matched Pair, N-Channel, SO
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    Quest Components SI9936DY 4,906
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    SI9936DY 1,552
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    SI9936DY 80
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    SI9936DY Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI9936DY Fairchild Semiconductor Dual N-Channel Enhancement Mode MOSFET Original PDF
    Si9936DY Philips Semiconductors N-Channel Enhancement Mode Field-Effect Transistor Original PDF
    SI9936DY Philips Semiconductors N-channel enhancement mode field-effect transistor Original PDF
    SI9936DY Siliconix Dual N-Channel Enhancement-Mode MOSFET Original PDF
    Si9936DY Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SI9936DY General Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, N-Channel, 30V, Dual, Pkg Style SO-8 Scan PDF
    SI9936DY,518 Philips Semiconductors FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 5A SOT96-1 Original PDF
    SI9936DY-DS Vishay Telefunken DS-Spice Model for Si9936DY Original PDF
    SI9936DY_NL Fairchild Semiconductor Dual N-Channel Enhancemnt Mode MOSFET Original PDF
    Si9936DY SPICE Device Model Vishay Dual N-Channel 30-V (D-S) MOSFET Original PDF
    SI9936DY-T1 Vishay Intertechnology Dual N-Channel 30-V (D-S) MOSFET Original PDF

    SI9936DY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si9936DY Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original
    PDF Si9936DY

    Untitled

    Abstract: No abstract text available
    Text: Si9936DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original
    PDF Si9936DY

    Si4936DY

    Abstract: Si6954DQ Si9936DY
    Text: Si9936DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.050 @ VGS = 10 V "5.0 0.080 @ VGS = 4.5 V "3.9 Recommended upgrade: Si4936DY Lower profile/smaller size see: Si6954DQ D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3


    Original
    PDF Si9936DY Si4936DY Si6954DQ 51310--Rev. 18-Dec-96

    Si9936DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si9936DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si9936DY 05-Nov-99

    Si9936DY

    Abstract: Si4936DY Si6954DQ
    Text: Si9936DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.050 @ VGS = 10 V "5.0 0.080 @ VGS = 4.5 V "3.9 Recommended upgrade: Si4936DY Lower profile/smaller size see: Si6954DQ D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3


    Original
    PDF Si9936DY Si4936DY Si6954DQ 51310--Rev. 18-Dec-96

    Si9936DY

    Abstract: No abstract text available
    Text: Si9936DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original
    PDF Si9936DY

    Si4936DY

    Abstract: Si6956DQ Si9936DY Si9956DY
    Text: Si9956DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.10 @ VGS = 10 V "3.5 0.20 @ VGS = 4.5 V "2.0 Recommended upgrade: Si4936DY or Si9936DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6956DQ D1 D1 D2 D2


    Original
    PDF Si9956DY Si4936DY Si9936DY Si6956DQ S-47958--Rev. 15-Apr-96

    Si4936DY

    Abstract: Si6954DQ Si9936DY
    Text: Si9936DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.050 @ VGS = 10 V "5.0 0.080 @ VGS = 4.5 V "3.9 Recommended upgrade: Si4936DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6954DQ D1 D1 D2 D2 SO-8 S1


    Original
    PDF Si9936DY Si4936DY Si6954DQ S-47958--Rev. 15-Apr-96

    Si4936DY

    Abstract: Si6956DQ Si9936DY Si9956DY
    Text: Si9956DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.10 @ VGS = 10 V "3.5 0.20 @ VGS = 4.5 V "2.0 Recommended upgrade: Si4936DY or Si9936DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6956DQ D1 D1 D2 D2


    Original
    PDF Si9956DY Si4936DY Si9936DY Si6956DQ S-47958--Rev. 15-Apr-96

    Si4936DY

    Abstract: Si6954DQ Si9936DY
    Text: Si9936DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.050 @ VGS = 10 V "5.0 0.080 @ VGS = 4.5 V "3.9 Recommended upgrade: Si4936DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6954DQ D1 D1 D2 D2 SO-8 S1


    Original
    PDF Si9936DY Si4936DY Si6954DQ S-47958--Rev. 15-Apr-96

    Si9936DY

    Abstract: No abstract text available
    Text: Si9936DY Siliconix Dual NĆChannel EnhancementĆMode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.050 @ VGS = 10 V "5.0 0.080 @ VGS = 4.5 V "3.9 D1 D1 D2 D2 SOĆ8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 Top View G2 S1 S2 NĆChannel MOSFET NĆChannel MOSFET


    Original
    PDF Si9936DY S-42910--Rev.

    Si6956DQ

    Abstract: Si9936DY Si9956DY
    Text: Si9956DY Siliconix Dual NĆChannel EnhancementĆMode MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.10 @ VGS = 10 V "3.5 0.20 @ VGS = 4.5 V "2.0 Recommended upgrade: Si9936DY Lower profile/smaller sizeĊsee LITE FOOTR equivalent: Si6956DQ D1 D1 D2 D2


    Original
    PDF Si9956DY Si9936DY Si6956DQ P-38889--Rev.

    SCA72

    Abstract: Si9936DY MS-012AA
    Text: Si9936DY N-channel enhancement mode field-effect transistor Rev. 01 — 16 July 2001 M3D315 Product data 1. Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si9936DY in SOT96-1 SO8 .


    Original
    PDF Si9936DY M3D315 OT96-1 OT96-1, SCA72 MS-012AA

    Si4936DY

    Abstract: Si6956DQ Si9936DY Si9956DY
    Text: Si9956DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.10 @ VGS = 10 V "3.5 0.20 @ VGS = 4.5 V "2.0 Recommended upgrade: Si4936DY or Si9936DY Lower profile/smaller size see: Si6956DQ D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2


    Original
    PDF Si9956DY Si4936DY Si9936DY Si6956DQ S-51302--Rev. 18-Dec-96

    Si9936BDY

    Abstract: Si9936DY-T1 Si9936BDY-E3 Si9936BDY-T1-E3 Si9936DY
    Text: Specification Comparison Vishay Siliconix Si9936BDY vs. Si9936DY Description: Dual N-Channel, 30 V D-S MOSFET Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si9936BDY Replaces Si9936DY Si9936BDY-E3 (Lead (Pb)-free version) Replaces Si9936DY


    Original
    PDF Si9936BDY Si9936DY Si9936BDY-E3 Si9936BDY-T1 Si9936DY-T1 Si9936BDY-T1-E3

    Untitled

    Abstract: No abstract text available
    Text: SI9936DY Transistors Matched Pair of N-Channel Enhancement MOSFETs V BR DSS (V)30 V(BR)GSS (V)20 I(D) Max. (A)5.0 I(DM) Max. (A) Pulsed I(D)4.0 @Temp (øC)70’ IDM Max (@25øC Amb)40 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)2.0 Minimum Operating Temp (øC)-55


    Original
    PDF SI9936DY

    Untitled

    Abstract: No abstract text available
    Text: Si9936DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original
    PDF Si9936DY

    Si9936DY

    Abstract: No abstract text available
    Text: Si9936DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.050 @ VGS = 10 V "5.0 0.080 @ VGS = 4.5 V "3.9 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 N-Channel MOSFET N-Channel MOSFET


    Original
    PDF Si9936DY S-00652--Rev. 27-Mar-00

    Si9936DY

    Abstract: No abstract text available
    Text: Si9936DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.050 @ VGS = 10 V "5.0 0.080 @ VGS = 4.5 V "3.9 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 N-Channel MOSFET N-Channel MOSFET


    Original
    PDF Si9936DY 18-Jul-08

    Si4936DY

    Abstract: Si6956DQ Si9936DY Si9956DY
    Text: Si9956DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.10 @ VGS = 10 V "3.5 0.20 @ VGS = 4.5 V "2.0 Recommended upgrade: Si4936DY or Si9936DY Lower profile/smaller size see: Si6956DQ D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2


    Original
    PDF Si9956DY Si4936DY Si9936DY Si6956DQ S-51302--Rev. 18-Dec-96

    Si9730

    Abstract: No abstract text available
    Text: Product is End of Life 12/2014 Si9730 Vishay Siliconix Dual-Cell Lithium Ion Battery Control IC DESCRIPTION FEATURES The Si9730 monitors the charging and discharging of dualcell lithium-ion battery packs carbon or coke chemistry ensuring that battery capacity is fully utilized while ensuring


    Original
    PDF Si9730 Si9730 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si6543DQ Vishay Siliconix Dual N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.065 at VGS = 10 V ± 3.9 0.095 at VGS = 4.5 V ± 3.1 0.085 at VGS = - 10 V ± 2.5 0.19 at VGS = - 4.5 V ± 1.8


    Original
    PDF Si6543DQ Si6543DQ-T1 Si6543DQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    si6956

    Abstract: SI6956DQ
    Text: SÌ9956DY Dual N-Channel Enhancement-Mode MOSFET Product Summary rDS on ( ß ) Id (A) 0.10 @ VGs = 10 V ±3.5 0.20 @ VGs = 4.5 V ±2.0 V d s (V) 20 Recommended upgrade: Si4936DY or Si9936DY Lower profile!smaller size see: Si6956DQ Di Di D2 D2 Q Q Q Q SO-8


    OCR Scan
    PDF 9956DY Si4936DY Si9936DY Si6956DQ 18-Dec-96 S-51302-- si6956

    Untitled

    Abstract: No abstract text available
    Text: Temic siiictinix_ SÌ9956DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDs V «DS(on) (Q ) 20 Id (A) 0.10 @ VGS = 10 V ±3.5 0.20 @ VGS = 4.5 V ±2.0 Recommended upgrade: Si9936DY Lower profile/smaller size— see L IT E FOOT equivalent: Si6956DQ


    OCR Scan
    PDF 9956DY Si9936DY Si6956DQ P-38889--