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    SI9426DY Price and Stock

    onsemi SI9426DY

    SINGLE N-CHANNEL, 2.5V SPECIFIED MOSFET - Bulk (Alt: SI9426DY)
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    Avnet Americas SI9426DY Bulk 4 Weeks 1
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    Fairchild Semiconductor Corporation SI9426DY

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    Bristol Electronics SI9426DY 152
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    Quest Components SI9426DY 121
    • 1 $0.979
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    Rochester Electronics SI9426DY 800 1
    • 1 $0.3071
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    Vishay Siliconix SI9426DY

    MOSFET Transistor, N-Channel, SO
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    Quest Components SI9426DY 783
    • 1 $3.99
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    SI9426DY 232
    • 1 $0.979
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    Vishay Siliconix SI9426DY-T1

    10000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
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    Quest Components SI9426DY-T1 324
    • 1 $1.0125
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    SI9426DY-T1 273
    • 1 $1.6875
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    Vishay Siliconix SI9426DYT1

    N-CHANNEL 2.5-V (G-S) RATED MOSFET Small Signal Field-Effect Transistor, 10A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SI9426DYT1 2,465
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    SI9426DY Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI9426DY Fairchild Semiconductor Single N-Channel, 2.5V Specified MOSFET Original PDF
    SI9426DY Siliconix N-Channel 2.5-V (G-S) Rated MOSFET Original PDF
    Si9426DY Toshiba Power MOSFETs Cross Reference Guide Original PDF
    Si9426DY Vishay Intertechnology N-Channel 2.5-V (G-S) MOSFET Original PDF
    SI9426DY General Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, N-Channel, 20V, Single, Pkg Style SO-8 Scan PDF
    SI9426DY_NL Fairchild Semiconductor Single N-Channel, 2.5V Specified MOSFET Original PDF
    Si9426DY SPICE Device Model Vishay N-Channel 2.5-V (G-S) MOSFET Original PDF
    SI9426DY-T1 Vishay Intertechnology N-Channel 2.5-V (G-S) MOSFET Original PDF

    SI9426DY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si9426DY

    Abstract: No abstract text available
    Text: Si9426DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.0135 @ VGS = 4.5 V "10 0.0160 @ VGS = 2.5 V "9.3 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si9426DY S-47958--Rev. 15-Apr-96

    Untitled

    Abstract: No abstract text available
    Text: SI9426DY Single N-Channel, 2.5V Specified MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s high cell density DMOS technology process that has been especially tailored to minimize on-state resistance and yet


    Original     		PDF SI9426DY

    Si9426DY

    Abstract: No abstract text available
    Text: Si9426DY N-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) 20 rDS(on) (W) ID (A) 0.0135 @ VGS = 4.5 V "10 0.0160 @ VGS = 2.5 V "9.3 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si9426DY S-49532--Rev. 02-Feb-98

    Si9426DY

    Abstract: No abstract text available
    Text: Si9426DY Vishay Siliconix N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 20 ID (A) 0.0135 @ VGS = 4.5 V "10 0.0160 @ VGS = 2.5 V "9.3 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si9426DY S-49532--Rev. 02-Feb-98

    Untitled

    Abstract: No abstract text available
    Text: Si9426DY Vishay Siliconix N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 20 ID (A) 0.0135 @ VGS = 4.5 V 10 0.0160 @ VGS = 2.5 V 9.3 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si9426DY Si9426DY-T1 (with Tape and Reel)


    Original     		PDF Si9426DY Si9426DY-T1 S-03950--Rev. 26-May-03

    Si9426DY

    Abstract: No abstract text available
    Text: Si9426DY N-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) 20 rDS(on) (W) ID (A) 0.0135 @ VGS = 4.5 V "10 0.0160 @ VGS = 2.5 V "9.3 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si9426DY S-49532--Rev. 02-Feb-98

    SI9426DY ROHS

    Abstract: SI9426DY 9426
    Text: SI9426DY Single N-Channel, 2.5V Specified MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s high cell density DMOS technology process that has been especially tailored to minimize on-state resistance and yet


    Original     		PDF SI9426DY SI9426DY ROHS SI9426DY 9426

    Si9426DY

    Abstract: SI9426DY ROHS 71032 Si9426DY SPICE Device Model
    Text: SPICE Device Model Si9426DY Vishay Siliconix N-Channel 2.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si9426DY 09-Apr-02 SI9426DY ROHS 71032 Si9426DY SPICE Device Model

    SI9426DY ROHS

    Abstract: Si9426DY Si9426DY-T1 70160
    Text: Si9426DY Vishay Siliconix N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 20 ID (A) 0.0135 @ VGS = 4.5 V 10 0.0160 @ VGS = 2.5 V 9.3 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si9426DY Si9426DY-T1 (with Tape and Reel)


    Original     		PDF Si9426DY Si9426DY-T1 18-Jul-08 SI9426DY ROHS 70160

    Untitled

    Abstract: No abstract text available
    Text: Si9426DY Vishay Siliconix N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 20 ID (A) 0.0135 @ VGS = 4.5 V 10 0.0160 @ VGS = 2.5 V 9.3 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si9426DY Si9426DY-T1 (with Tape and Reel)


    Original     		PDF Si9426DY Si9426DY-T1 08-Apr-05

    LTC3832

    Abstract: MBR330T3 LTC3832-1 LTC3832EGN MBR0520T1 Si9426DY SSOP-16 EEFUEOD271R sn3832 sanyo mv-wx Series
    Text: LTC3832/LTC3832-1 High Power Step-Down Synchronous DC/DC Controllers for Low Voltage Operation U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LTC 3832/LTC3832-1 are high power, high efficiency switching regulator controllers optimized for


    Original     		PDF LTC3832/LTC3832-1 3832/LTC3832-1 LTC3832/LTC3832-1 LTC3713 LTC3831 sn3832 3832fs LTC3832 MBR330T3 LTC3832-1 LTC3832EGN MBR0520T1 Si9426DY SSOP-16 EEFUEOD271R sanyo mv-wx Series

    mosfet cross reference

    Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local


    Original     		PDF

    bq2903

    Abstract: schematic diagram 12V battery charger regulator TIP42 Application Note rayovac aaa rechargeable diode 1N4001 specifications rechargeable battery DOD alkaline battery charger 2N4403 diagram Rayovac aa nimh
    Text: U-512 Using the bq2902/3 Rechargeable Alkaline ICs As a result, alkaline cells provide lower effective capacity at higher discharge currents. Introduction The bq2902 and bq2903 ICs manage rechargeable alkalines such as the Renewal cells from Rayovac®. These


    Original     		PDF U-512 bq2902/3 bq2902 bq2903 bq2902 schematic diagram 12V battery charger regulator TIP42 Application Note rayovac aaa rechargeable diode 1N4001 specifications rechargeable battery DOD alkaline battery charger 2N4403 diagram Rayovac aa nimh

    tssop14 land pattern

    Abstract: block diagram ORMS 4SP560M FDS6890A QPIP1205-809-3 SC1110 Si9426DY
    Text: SC1110 Sink and Source DC/DC Controller for Termination Power Supply Applications POWER MANAGEMENT Description Features The SC1110 is a low-cost, full featured, synchronous voltage-mode controller designed to generate termination voltage in double data rate DDR memory


    Original     		PDF SC1110 SC1110 SO-14 TSSOP-14 tssop14 land pattern block diagram ORMS 4SP560M FDS6890A QPIP1205-809-3 Si9426DY

    r9824

    Abstract: R9825 HT 1200-4 smd L9707 HT 1200-4 r9810 L9708 U5400 r2561 C3523
    Text: 8 6 7 2 3 4 5 CK APPD GILA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN DATE ? ? ? EVT1 D C B PAGE PDF 1 2 3 4 6 7 8 9 10 11 13* 14 16


    Original     		PDF 1/10W XW9902 XC9901 50R28 U9500 XW9903 25MIL 10MIL R9915 r9824 R9825 HT 1200-4 smd L9707 HT 1200-4 r9810 L9708 U5400 r2561 C3523

    IRF5505

    Abstract: C3427 SN7002DW LD1807 343S0284 apple AirPort Extreme h11m r3361 HC17051 1n914 onsemi
    Text: 6 7 B A 1 2 3 4 5 6 7 8 9 10 11 13* 14 16 17 18 21* 22 23 24 25* 26 27 28 29 30 31 32 33 34 35 36 37 38 40 44 45 46 48 49 50 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 REV 08/03/04 CIRCUIT


    Original     		PDF TEST10 TEST11 CS8406 RA300 RA302 1/16W IRF5505 C3427 SN7002DW LD1807 343S0284 apple AirPort Extreme h11m r3361 HC17051 1n914 onsemi

    BAT54ALT1

    Abstract: IRF7455 LTC4213 LTC4216 Si4864DY Si9426DY
    Text: DESIGN FEATURES Low Voltage Hot Swap Controller with Inrush Current Control by Chew Lye Huat Introduction The LTC4216 is a low voltage Hot Swap controller that allows a board to be safely inserted and removed from a live backplane. The LTC4216 is designed


    Original     		PDF LTC4216 BAT54ALT1 IRF7455 LTC4213 Si4864DY Si9426DY

    PC MOTHERBOARD foxconn sc242

    Abstract: transistor C458 intel 8255 hp 530 motherboard circuit and solution A0344 INTEL 82550 LT1587ADJ NPN C458 slot 1 foxconn sc242 intel ic 8255
    Text: R Intel 820E Chipset Design Guide May 2001 Document Number: 298187-003 Intel® 820E Chipset R Information in this document is provided in connection with Intel® products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of Sale for such products, Intel assumes no liability


    Original     		PDF CLK66 P08-050-SL-A-G PC MOTHERBOARD foxconn sc242 transistor C458 intel 8255 hp 530 motherboard circuit and solution A0344 INTEL 82550 LT1587ADJ NPN C458 slot 1 foxconn sc242 intel ic 8255

    ampli 2002

    Abstract: 4SP560M FDS6890A QPIP1205-809-3 SC1110 Si9426DY c1214
    Text: SC1110 Sink and Source DC/DC Controller for Termination Power Supply Applications POWER MANAGEMENT Description Features The SC1110 is a low-cost, full featured, synchronous voltage-mode controller designed to generate termination voltage in double data rate DDR memory


    Original     		PDF SC1110 SC1110 SC111010 SO-14 TSSOP-14 ampli 2002 4SP560M FDS6890A QPIP1205-809-3 Si9426DY c1214

    F10 SOT23-6

    Abstract: 330nF capacitor LTC4216 LTC4216CDE LTC4216CMS LTC4216IDE LTC4216IMS Si4864DY ltbkv M3 SOT23-6
    Text: LTC4216 Ultralow Voltage Hot Swap Controller U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC 4216 is a positive low-voltage Hot SwapTM controller that allows a board to be safely inserted and removed from a live backplane. It controls load voltages


    Original     		PDF LTC4216 OT23-6 MSOP-10 SSOP-16 LTC4221 LTC4230 SSOP-20 F10 SOT23-6 330nF capacitor LTC4216 LTC4216CDE LTC4216CMS LTC4216IDE LTC4216IMS Si4864DY ltbkv M3 SOT23-6

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


    Original     		PDF 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G

    IRF9310

    Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross Reference lists MOSFETs by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional


    Original     		PDF device2176 r14153 CR108/D IRF9310 mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution

    SDCFB

    Abstract: sandisk SDTB-32 SDP3B SDTB-32 SMBJ15A SDCFB-32 semikron SK 300GB SDCFB-128 SDP3B-8-101
    Text: Semiconductor Directory ManufacturerÕs Code Log AGT ADI AMD AVX COL CRY Agilent Technologies Analog Devices Inc. Advanced Micro Devices AVX Collmer Semiconductors, Inc. Crydom Company Mfr.Õs Type Price DLS EPC FSC GIS IRF INT Mfr.Õs Code Page Dallas Semiconductor


    Original     		PDF SC141D SI4480DY SMBJ12CA SN7474N SI4410DY-REVA SLOP114 SN7432N SN74ALS05AN SI4412DY SLVP097 SDCFB sandisk SDTB-32 SDP3B SDTB-32 SMBJ15A SDCFB-32 semikron SK 300GB SDCFB-128 SDP3B-8-101

    Untitled

    Abstract: No abstract text available
    Text: Tem ic Si9426DY Semiconductors N-Channel 2.5-V G-S Rated MOSFET Product Summary VDS(V) 20 r DS(on) (£2) I d (A) 0.0135 @ VGs = 4.5 V ±10 0.0160 @ VGs = 2.5 V ±9.3 i D Q SO-8 6 s N-Channel MOSFET Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)


    OCR Scan     		PDF Si9426DY S-49532â 02-Feb-98