SC-89
Abstract: No abstract text available
Text: 2N7002KT N-Channel ENHANCEMENT MODE POWER MOSFET 3 P b Lead Pb -Free 1 2 FEATURES: SC-89 * Gate-Source ESD Protected: 1500 V * Fast Switching Speed * Low On-Resistance * Low Voltage Driver Drain 3 APPLICATIONS: * Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories
|
Original
|
PDF
|
2N7002KT
SC-89
14-Sep-09
SC-89
|
84772
Abstract: LLP75-6A VEMI255A-HS3
Text: VEMI255A-HS3 Vishay Semiconductors 2-Channel EMI-Filter with ESD-Protection FEATURES • Ultra compact LLP75-6A package 6 5 4 • 2-channel EMI-filter and ESD-protection • Low leakage current • Line resistance RS = 50 Ω 1 2 • Typical cut off frequency f3dB = 100 MHz
|
Original
|
PDF
|
VEMI255A-HS3
LLP75-6A
2002/95/EC
2002/96/EC
11-Mar-11
84772
VEMI255A-HS3
|
Si7617DN
Abstract: SI7617
Text: SPICE Device Model Si7617DN Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
PDF
|
Si7617DN
18-Jul-08
SI7617
|
SUP60N10-18P
Abstract: No abstract text available
Text: SPICE Device Model SUP60N10-18P Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the
|
Original
|
PDF
|
SUP60N10-18P
18-Jul-08
SUP60N10-18P
|
Si3948DV
Abstract: No abstract text available
Text: Si3948DV Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.105 at VGS = 10 V ± 2.5 0.175 at VGS = 4.5 V ± 2.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs
|
Original
|
PDF
|
Si3948DV
2002/95/EC
Si3948DV-T1-E3
Si3948DV-T1-GE3
18-Jul-08
|
SQD25N06-22L-GE3
Abstract: No abstract text available
Text: SQD25N06-22L Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd
|
Original
|
PDF
|
SQD25N06-22L
AEC-Q101
2002/95/EC
O-252
SQD25N06-22L-GE3
18-Jul-08
SQD25N06-22L-GE3
|
65420
Abstract: No abstract text available
Text: SPICE Device Model Si8461DB Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
PDF
|
Si8461DB
18-Jul-08
65420
|
LLP75-6A
Abstract: VEMI255A-HS3 esdprotection 84772
Text: VEMI255A-HS3 Vishay Semiconductors 2-Channel EMI-Filter with ESD-Protection FEATURES • Ultra compact LLP75-6A package 6 5 4 • 2-channel EMI-filter and ESD-protection • Low leakage current • Line resistance RS = 50 Ω 1 2 • Typical cut off frequency f3dB = 100 MHz
|
Original
|
PDF
|
VEMI255A-HS3
LLP75-6A
2002/95/EC
2002/96/EC
18-Jul-08
VEMI255A-HS3
esdprotection
84772
|
Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiB408DK Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
PDF
|
SiB408DK
18-Jul-08
|
si4914b
Abstract: si4914 Si4914BDY
Text: SPICE Device Model Si4914BDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
PDF
|
Si4914BDY
18-Jul-08
si4914b
si4914
|
Si7212DN
Abstract: Si7212DN-T1-E3 Si7212DN-T1-GE3
Text: Si7212DN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.036 at VGS = 10 V 6.8 0.039 at VGS = 4.5 V 6.6 Qg (Typ.) 7 • Halogen-free According to IEC 61249-2-21 Definition • 100 % Rg Tested • Space Savings Optimized for Fast Switching
|
Original
|
PDF
|
Si7212DN
2002/95/EC
Si7212DN-T1-E3
Si7212DN-T1-GE3
18-Jul-08
|
SI4477
Abstract: SI4477DY 65215 A1015
Text: SPICE Device Model Si4477DY Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
PDF
|
Si4477DY
18-Jul-08
SI4477
65215
A1015
|
si8473
Abstract: No abstract text available
Text: Si8473EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID (A)a, e 0.041 at VGS = - 4.5 V - 7.1 0.055 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
|
Original
|
PDF
|
Si8473EDB
2002/95/EC
8473E
Si8473EDB-T1-E1
18-Jul-08
si8473
|
Untitled
Abstract: No abstract text available
Text: Si7446BDP Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0075 at VGS = 10 V 19 0.010 at VGS = 4.5 V 17 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
|
Original
|
PDF
|
Si7446BDP
2002/95/EC
Si7446BDP-T1-E3
Si7446BDP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
|
|
Untitled
Abstract: No abstract text available
Text: SiR168DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0044 at VGS = 10 V 40 0.0059 at VGS = 4.5 V 40 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
|
Original
|
PDF
|
SiR168DP
2002/95/EC
SiR168DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: Si8473EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID (A)a, e 0.041 at VGS = - 4.5 V - 7.1 0.055 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
|
Original
|
PDF
|
Si8473EDB
2002/95/EC
8473E
Si8473EDB-T1-E1
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: New Product Si4712DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.013 at VGS = 10 V 14.6 0.0165 at VGS = 4.5 V 12.9 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • SkyFET Monolithic TrenchFET® Power
|
Original
|
PDF
|
Si4712DY
2002/95/EC
Si4712DY-T1-GE3
11-Mar-11
|
MTA-156
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. CM 1 MATERIAL: REVISIONS DIST P LTR DESCRIPTION DATE DWN G REVISED PER ECO-08-008919 16APR08 G1 REVISED PER ECO-09-021 51 0 14SEP09
|
OCR Scan
|
PDF
|
31MAR2000
ECO-08-008919
16APR08
ECO-09-021
14SEP09
UL94-V2
27APR04
MTA-156,
MTA-156
|
Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. DIST LOC FT ALL RIGHTS RESERVED. RECEPTACLE P.O. LTR DESCRIPTION DATE DWN APVD HW M REV PER 0 G 3 C — 0 2 1 4 — 99 24AUG00 BH M1 REVISED 14SEP09 KK AEG ACCEPTS
|
OCR Scan
|
PDF
|
ECO-09-021
24AUG00
14SEP09
31MAR2000
|
Untitled
Abstract: No abstract text available
Text: 7 TH IS DRAWING IS U N P U B LIS H E D . RELEASED ALL COPYRIGHT 2005 FOR 6 5 2 PUBLICATION RIGHTS LOC RESERVED. D IS T R E V IS IO N S AD 00 BY TYCO ELECTRONICS CORPORATION. D SPACES AT 2 .5 4 [. 1 O O ] J1 REV PER ECO—0 6 —0 2 2 9 2 3 J2 REVISED PER DATE
|
OCR Scan
|
PDF
|
|
MTA-156
Abstract: No abstract text available
Text: 4 T H IS D R AW IN G IS U N P U B L IS H E D . CO PYRIG H T 3 R E L E A S E D FO R P U B LIC A T IO N BY TYCO ELEC TR O N IC S CO RPO RATIO N . LOC A L L R IG H T S R E S E R V E D . REVISIONS D IS T LIVI 5 4 O U p LTR D D1 D E S C R IP T IO N DATE DWN ECO —0 7 —01 2 8 8
|
OCR Scan
|
PDF
|
31MAR2000
22JUN07
EC0-09-021
UL94V-0
DIA66
22FEB95
MTA-156
UL94V-0,
14SEP09
|
MTA-156
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. CM L ±0.25 [±.010] 4\/7 SOLDERTAIL A A A DATE DESCRIPTION D EC OG3B D1 REVISED 12 PER E C O - 0 9 - 0 2 1 51 0 AP P LIE S
|
OCR Scan
|
PDF
|
ECO-09-021
29DEC05
14SEP09
L94-0.
17JUN98
MTA-156
|
MTA-156
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. CM L ±0.25 [±.0 1 0 ] REVISIONS D IS T LTR DESCRIPTION DATE D EC OG3B 1113 04 28D EC 05 D1 REVISED PER ECO-09-021 51 0
|
OCR Scan
|
PDF
|
ECO-09-021
28DEC05
14SEP09
L94-0.
17JUN98
MTA-156
31MAR2000
|
AEG 2588
Abstract: MTA-156
Text: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. CM MATERIAL: 2 REVISIONS DIST DESCRIPTION LTR DWN DATE F REVISED PER ECO-08-008919 16APR08 F1 REVISED PER ECO-09-021 51 0
|
OCR Scan
|
PDF
|
ECO-08-008919
ECO-09-021
16APR08
14SEP09
UL94V-2
MTA-156
31MAR2000
AEG 2588
|