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    SI7212DN Price and Stock

    Vishay Intertechnologies SI7212DN-T1-GE3

    Transistor MOSFET Array Dual N-CH 30V 4.9A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7212DN-T1-GE3)
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    Avnet Americas SI7212DN-T1-GE3 Reel 20 Weeks 3,000
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    Mouser Electronics SI7212DN-T1-GE3 2,885
    • 1 $1.24
    • 10 $1.06
    • 100 $0.904
    • 1000 $0.662
    • 10000 $0.646
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    Newark SI7212DN-T1-GE3 Cut Tape 2,725 1
    • 1 $1.76
    • 10 $1.76
    • 100 $1.76
    • 1000 $1.76
    • 10000 $1.76
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    SI7212DN-T1-GE3 Reel 3,000
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    Bristol Electronics SI7212DN-T1-GE3 94
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    TTI SI7212DN-T1-GE3 Reel 9,000 3,000
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    • 10000 $0.565
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    Chip1Stop SI7212DN-T1-GE3 1,860
    • 1 $1.29
    • 10 $0.883
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    • 1000 $0.883
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    EBV Elektronik SI7212DN-T1-GE3 21 Weeks 3,000
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    Vishay Intertechnologies SI7212DN-T1-E3

    Transistor MOSFET Array Dual N-Channel 30V 4.9A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7212DN-T1-E3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI7212DN-T1-E3 Reel 20 Weeks 3,000
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    Mouser Electronics SI7212DN-T1-E3 14,110
    • 1 $1.84
    • 10 $1.54
    • 100 $1.22
    • 1000 $1.08
    • 10000 $0.993
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    Quest Components SI7212DN-T1-E3 47
    • 1 $1.725
    • 10 $1.587
    • 100 $1.38
    • 1000 $1.38
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    TTI SI7212DN-T1-E3 Reel 3,000
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    EBV Elektronik SI7212DN-T1-E3 21 Weeks 3,000
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    Vishay Siliconix SI7212DN-T1-GE3

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    New Advantage Corporation SI7212DN-T1-GE3 3,000 1
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    SI7212DN Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI7212DN Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET Original PDF
    SI7212DN Vishay Siliconix MOSFETs Original PDF
    Si7212DN-T1-E3 Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET Original PDF
    SI7212DN-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 4.9A 1212-8 Original PDF
    SI7212DN-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 4.9A 1212-8 Original PDF

    SI7212DN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si7212DN

    Abstract: Si7212DN-T1-E3 Si7212DN-T1-GE3
    Text: Si7212DN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.036 at VGS = 10 V 6.8 0.039 at VGS = 4.5 V 6.6 Qg (Typ.) 7 • Halogen-free According to IEC 61249-2-21 Definition • 100 % Rg Tested • Space Savings Optimized for Fast Switching


    Original     		PDF Si7212DN 2002/95/EC Si7212DN-T1-E3 Si7212DN-T1-GE3 18-Jul-08

    Si7212DN-T1-E3

    Abstract: Si7212DN-T1-GE3 Si7212DN
    Text: Si7212DN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.036 at VGS = 10 V 6.8 0.039 at VGS = 4.5 V 6.6 Qg (Typ.) 7 APPLICATIONS PowerPAK 1212-8 • Synchronous Rectification • Intermediate Driver


    Original     		PDF Si7212DN Si7212DN-T1-E3 Si7212DN-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si7212DN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.036 at VGS = 10 V 6.8 0.039 at VGS = 4.5 V 6.6 Qg (Typ.) 7 • Halogen-free According to IEC 61249-2-21 Definition • 100 % Rg Tested • Space Savings Optimized for Fast Switching


    Original     		PDF Si7212DN 2002/95/EC Si7212DN-T1-E3 Si7212DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si7212DN

    Abstract: No abstract text available
    Text: SPICE Device Model Si7212DN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si7212DN S-60146Rev. 13-Feb-06

    Si7212DN

    Abstract: Si7212DN-T1-E3 71685
    Text: Si7212DN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 30 ID (A) 0.036 at VGS = 10 V 6.8 0.039 at VGS = 4.5 V 6.6 Qg (Typ) 7 • TrenchFET Gen II Power MOSFET • 100 % Rg Tested • Space Savings Optimized for Fast


    Original     		PDF Si7212DN Si7212DN-T1-E3 08-Apr-05 71685

    Untitled

    Abstract: No abstract text available
    Text: Si7212DN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 30 ID (A) 0.036 at VGS = 10 V 6.8 0.039 at VGS = 4.5 V 6.6 Qg (Typ) 7 • TrenchFET Gen II Power MOSFET • 100 % Rg Tested • Space Savings Optimized for Fast


    Original     		PDF Si7212DN Si7212DN-T1-E3 18-Jul-08

    S-51128

    Abstract: Si7212DN
    Text: Si7212DN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.036 @ VGS = 10 V 6.8 0.039 @ VGS = 4.5 V 6.6 D TrenchFETr Gen II Power MOSFET D 100% Rg Tested D Space Savings Optimized for Fast Switching


    Original     		PDF Si7212DN Si7212DN-T1--E3 08-Apr-05 S-51128

    TSOP 54 land pattern

    Abstract: No abstract text available
    Text: Si7212DN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.036 at VGS = 10 V 6.8 0.039 at VGS = 4.5 V 6.6 Qg (Typ.) 7 • Halogen-free According to IEC 61249-2-21 Definition • 100 % Rg Tested • Space Savings Optimized for Fast Switching


    Original     		PDF Si7212DN 2002/95/EC Si7212DN-T1-E3 Si7212DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 TSOP 54 land pattern

    Si7212DN

    Abstract: Si7212DN-T1-E3
    Text: Si7212DN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 30 ID (A) 0.036 at VGS = 10 V 6.8 0.039 at VGS = 4.5 V 6.6 Qg (Typ) 7 • TrenchFET Gen II Power MOSFET • 100 % Rg Tested • Space Savings Optimized for Fast


    Original     		PDF Si7212DN Si7212DN-T1-E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si7212DN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.036 at VGS = 10 V 6.8 0.039 at VGS = 4.5 V 6.6 Qg (Typ.) 7 • Halogen-free According to IEC 61249-2-21 Definition • 100 % Rg Tested • Space Savings Optimized for Fast Switching


    Original     		PDF Si7212DN 2002/95/EC Si7212DN-T1-E3 Si7212DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si7212DN

    Abstract: No abstract text available
    Text: SPICE Device Model Si7212DN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si7212DN 18-Jul-08

    14755

    Abstract: 4936 AN609 Si7212DN
    Text: Si7212DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si7212DN AN609 22-Mar-07 14755 4936

    S-41638-Rev

    Abstract: Si7212DN Si7212DN-T1-E3
    Text: Si7212DN New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.036 @ VGS = 10 V 6.8 0.039 @ VGS = 4.5 V 6.6 D TrenchFETr Gen II Power MOSFET D 100% Rg Tested D Space Savings Optimized for Fast Switching


    Original     		PDF Si7212DN Si7212DN-T1--E3 S-41638--Rev. 06-Sep-04 S-41638-Rev Si7212DN-T1-E3

    Si7212DN

    Abstract: S-51128
    Text: Si7212DN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.036 @ VGS = 10 V 6.8 0.039 @ VGS = 4.5 V 6.6 D TrenchFETr Gen II Power MOSFET D 100% Rg Tested D Space Savings Optimized for Fast Switching


    Original     		PDF Si7212DN Si7212DN-T1--E3 S-51128--Rev. 13-Jun-05 S-51128

    Untitled

    Abstract: No abstract text available
    Text: Si7212DN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.036 at VGS = 10 V 6.8 0.039 at VGS = 4.5 V 6.6 Qg (Typ.) 7 • Halogen-free According to IEC 61249-2-21 Definition • 100 % Rg Tested • Space Savings Optimized for Fast Switching


    Original     		PDF Si7212DN 2002/95/EC Si7212DN-T1-E3 Si7212DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    LTC4007-1

    Abstract: zener diode 4.2V 0.25W 200W MOSFET POWER AMP 2N7002 MARKING IN4009 4009 circuit examples LTC4009 LTC4412 36V Li-Ion battery charge controller Datasheet ic 4009
    Text: LTC4009 LTC4009-1/LTC4009-2 High Efficiency, Multi-Chemistry Battery Charger DESCRIPTION FEATURES n n n n n n n n n n n n General Purpose Battery Charger Controller Efficient 550kHz Synchronous Buck PWM Topology ±0.5% Output Float Voltage Accuracy Programmable Charge Current: 4% Accuracy


    Original     		PDF LTC4009 LTC4009-1/LTC4009-2 550kHz 20-Pin LTC4413 LTC4414 LTC4416 4009fb LTC4007-1 zener diode 4.2V 0.25W 200W MOSFET POWER AMP 2N7002 MARKING IN4009 4009 circuit examples LTC4009 LTC4412 36V Li-Ion battery charge controller Datasheet ic 4009

    IC 4012 DATASHEET

    Abstract: 4012 IC data sheet 2N7002 MARKING LTC4012 dc adaptor 30v HV Charger Reference Design LTC1769 LTC4012-3 ORing diode VC10
    Text: LTC4012-3 High Efficiency, Multi-Chemistry Battery Charger with PowerPath Control DESCRIPTION FEATURES n n n n n n n n n n n n n General Purpose Battery Charger Controller Efficient 550kHz Synchronous Buck PWM Topology ±0.5% Output Float Voltage Accuracy


    Original     		PDF LTC4012-3 550kHz 20-Pin LTC4413 LTC4414 LTC4416 40123f IC 4012 DATASHEET 4012 IC data sheet 2N7002 MARKING LTC4012 dc adaptor 30v HV Charger Reference Design LTC1769 LTC4012-3 ORing diode VC10

    smd part marking G14 mosfet

    Abstract: smd part marking G14 sot MB39C308 MARKING CO6 NEC 41-A 002 LDMOS NEC
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS04-27261-5E ASSP for Power Management Applications of Ultra Mobile PC 6ch DC/DC Converter IC for LPIA Platform VR MB39C308 • DESCRIPTION The MB39C308 is a 6ch DC/DC buck converter LSI, which integrates all of necessary power supplies for UltraMobile PC powered by 2-cell Li-ion battery. And the MB39C308 uses current mode topology with N-channel


    Original     		PDF DS04-27261-5E MB39C308 MB39C308 smd part marking G14 mosfet smd part marking G14 sot MARKING CO6 NEC 41-A 002 LDMOS NEC

    ltc401

    Abstract: No abstract text available
    Text: LTC4009 LTC4009-1/LTC4009-2 High Efficiency, Multi-Chemistry Battery Charger DESCRIPTION FEATURES n n n n n n n n n n n n General Purpose Battery Charger Controller Efficient 550kHz Synchronous Buck PWM Topology ±0.5% Output Float Voltage Accuracy Programmable Charge Current: 4% Accuracy


    Original     		PDF LTC4009 LTC4009-1/LTC4009-2 550kHz 20-Pin LTC4413 LTC4414 LTC4416 4009fd ltc401

    LT4009

    Abstract: No abstract text available
    Text: LTC4009 High Efficiency, Multi-Chemistry Battery Charger FEATURES DESCRIPTION n The LTC4009 is a constant-current/constant-voltage battery charger controller. It uses a synchronous quasi-constant frequency PWM control architecture that will not generate audible noise with ceramic bulk capacitors. Charge


    Original     		PDF LTC4009 LTC4010 LTC4011 LTC4012 LTC4060 LTC4100 LTC4110 LTC4150 LT4009

    BS250KL-TR1-E3

    Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
    Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8


    Original     		PDF SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3

    MB39C3

    Abstract: marking co6 MPLC0730L M1 smd N channel FET MB39C30 mark b14 smd diode marking lx5d smd diode T42 MPLC073 CH1 B15 diode smd
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS04-27261-6E ASSP for Power Management Applications of Ultra Mobile PC 6ch DC/DC Converter IC for LPIA Platform VR MB39C308 • DESCRIPTION The MB39C308 is a 6ch DC/DC buck converter LSI, which integrates all of necessary power supplies for UltraMobile PC powered by 2-cell Li-ion battery. And the MB39C308 uses current mode topology with N-channel


    Original     		PDF DS04-27261-6E MB39C308 MB39C308 MB39C3 marking co6 MPLC0730L M1 smd N channel FET MB39C30 mark b14 smd diode marking lx5d smd diode T42 MPLC073 CH1 B15 diode smd

    LTC4009-2

    Abstract: LTC4009-1 ltc3608 LTC4009 LTC4008 10A PWM Charger 2N7002 LTC4006 LTC4007 LTC4011
    Text: L DESIGN FEATURES Feature-Packed Charger Handles All Battery Chemistries and Produces 3A/50W for Fast Charging from a 4mm x 4mm QFN by James A. McKenzie Introduction The LTC4009, LTC4009-1 and LTC4009-2 are a family of high power battery charger ICs that achieve a small


    Original     		PDF A/50W LTC4009, LTC4009-1 LTC4009-2 20-lead LTC4009 LTC4009-2 LTC4009-1) LTC4009-2) ltc3608 LTC4009 LTC4008 10A PWM Charger 2N7002 LTC4006 LTC4007 LTC4011

    IN4009

    Abstract: in 4009 4009 NOT GATE IC 4009 not gate in 4009 diode 4009 NOT GATE IC power supply pin LTC4009 TA01A LTC4009-2 Datasheet ic 4009
    Text: LTC4009 LTC4009-1/LTC4009-2 High Efficiency, Multi-Chemistry Battery Charger Description Features General Purpose Battery Charger Controller Efficient 550kHz Synchronous Buck PWM Topology ±0.5% Output Float Voltage Accuracy Programmable Charge Current: 4% Accuracy


    Original     		PDF LTC4009 LTC4009-1/LTC4009-2 550kHz 20-Pin LTC4413 LTC4414 LTC4416 4009fd IN4009 in 4009 4009 NOT GATE IC 4009 not gate in 4009 diode 4009 NOT GATE IC power supply pin LTC4009 TA01A LTC4009-2 Datasheet ic 4009