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    SI4477DY Price and Stock

    Vishay Siliconix SI4477DY-T1-GE3

    MOSFET P-CH 20V 26.6A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4477DY-T1-GE3 Cut Tape 1,009 1
    • 1 $1.4
    • 10 $1.145
    • 100 $0.8908
    • 1000 $0.61509
    • 10000 $0.61509
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    SI4477DY-T1-GE3 Reel 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.55146
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    SI4477DY-T1-GE3 Digi-Reel 1
    • 1 $1.4
    • 10 $1.145
    • 100 $0.8908
    • 1000 $0.61509
    • 10000 $0.61509
    Buy Now

    Vishay Intertechnologies SI4477DY-T1-GE3

    Trans MOSFET P-CH 20V 18A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4477DY-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI4477DY-T1-GE3 Reel 16 Weeks 2,500
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    • 10000 $0.6741
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    Mouser Electronics SI4477DY-T1-GE3 2,989
    • 1 $1.4
    • 10 $1.12
    • 100 $0.891
    • 1000 $0.616
    • 10000 $0.525
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    Bristol Electronics SI4477DY-T1-GE3 1,522
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    TTI SI4477DY-T1-GE3 Reel 7,500 2,500
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    • 1000 -
    • 10000 $0.525
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    Rutronik SI4477DY-T1-GE3 Reel 7,500 2,500
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    • 10000 $0.5323
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    Avnet Asia SI4477DY-T1-GE3 27 Weeks 2,500
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    SI4477DY Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI4477DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 26.6A 8-SOIC Original PDF

    SI4477DY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SI4477

    Abstract: SI4477DY 65215 A1015
    Text: SPICE Device Model Si4477DY Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    PDF Si4477DY 18-Jul-08 SI4477 65215 A1015

    vishay so-8

    Abstract: si4477dy SI4477
    Text: Si4477DY Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0062 at VGS = - 4.5 V - 26.6 0.0105 at VGS = - 2.5 V - 20.6 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si4477DY 2002/95/EC Si4477DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 vishay so-8 SI4477

    AN609

    Abstract: Si4477DY
    Text: Si4477DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    PDF Si4477DY AN609, 04-Jan-10 AN609

    Untitled

    Abstract: No abstract text available
    Text: Si4477DY Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0062 at VGS = - 4.5 V - 26.6 0.0105 at VGS = - 2.5 V - 20.6 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si4477DY 2002/95/EC Si4477DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si4477DY Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0062 at VGS = - 4.5 V - 26.6 0.0105 at VGS = - 2.5 V - 20.6 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si4477DY 2002/95/EC Si4477DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4477DY www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    PDF Si4477DY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si4477DY Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0062 at VGS = - 4.5 V - 26.6 0.0105 at VGS = - 2.5 V - 20.6 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si4477DY 2002/95/EC Si4477DY-T1-GE3 11-Mar-11

    Si4477DY

    Abstract: Si4477DY-T1-GE3 si4477
    Text: Si4477DY Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0062 at VGS = - 4.5 V - 26.6 0.0105 at VGS = - 2.5 V - 20.6 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si4477DY 2002/95/EC Si4477DY-T1-GE3 18-Jul-08 si4477

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


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    PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


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    PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original
    PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477