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    14A 600V TO247 IGBT Search Results

    14A 600V TO247 IGBT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    14A 600V TO247 IGBT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT w/ Diode VCES = IC25 = VCE sat ≤ tfi(typ) = IXGH28N120BD1 IXGT28N120BD1 1200V 50A 3.5V 170ns TO-247AD (IXGH) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ VGES VGEM 1200 1200 V V


    Original     		PDF IXGH28N120BD1 IXGT28N120BD1 170ns O-247AD IC100 28N120B 1-04-A

    IXGT28N120BD1

    Abstract: IXGH28N120BD1 28N120 TO-286 IC100
    Text: IXGH28N120BD1 IXGT28N120BD1 High Voltage IGBT w/ Diode VCES = IC25 = VCE sat ≤ tfi(typ) = 1200V 50A 3.5V 170ns TO-247AD (IXGH) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ VGES VGEM 1200 1200 V V


    Original     		PDF IXGH28N120BD1 IXGT28N120BD1 170ns O-247AD IC100 O-247) 28N120B 1-04-A IXGT28N120BD1 IXGH28N120BD1 28N120 TO-286 IC100

    APT10035LLL

    Abstract: APT27GA90BD15 MIC4452 600V180
    Text: APT27GA90BD15 900V High Speed PT IGBT T O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT27GA90BD15 APT10035LLL APT27GA90BD15 MIC4452 600V180

    Untitled

    Abstract: No abstract text available
    Text: APT27GA90BD15 APT27GA90SD15 900V High Speed PT IGBT B TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT27GA90BD15 APT27GA90SD15 APP11

    full wave BRIDGE RECTIFIER

    Abstract: No abstract text available
    Text: APT27GA90BD15 APT27GA90SD15 900V High Speed PT IGBT B TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT27GA90BD15 APT27GA90SD15 Ver13 full wave BRIDGE RECTIFIER

    APT10035LLL

    Abstract: APT27GA90BD15 MIC4452
    Text: APT27GA90BD15 900V High Speed PT IGBT T O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT27GA90BD15 APT10035LLL APT27GA90BD15 MIC4452

    igbt induction cooker

    Abstract: No abstract text available
    Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		PDF 28N120BD1 IC110 O-268 0-12A/DSEC 0-12A igbt induction cooker

    APT27GA90BD15

    Abstract: APT27GA90SD15 MIC4452 SD15
    Text: APT27GA90BD15 APT27GA90SD15 900V High Speed PT IGBT B TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT27GA90BD15 APT27GA90SD15 APT27GA90BD15 APT27GA90SD15 MIC4452 SD15

    28N120

    Abstract: No abstract text available
    Text: High Voltage IGBT IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25


    Original     		PDF 28N120B IC110 O-268 O-247 28N120

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25


    Original     		PDF 28N120B IC110 O-268 O-247

    IGBT for welding inverter

    Abstract: IRGP4066D irgps4067d SOLAR INVERTER IRGP4066D-E welding inverter circuit IRGPS4067 IRGP4063D welding igbt igbt welding circuit
    Text: ENERGY SAVINGS THE POWER MANAGEMENT LEADER FEATURES & BENEFITS Reduce Power Dissipation in UPS, Welding and Solar Inverter Applications 600V Trench Field Stop IGBTs • Lower conduction and switching losses compared to previous generation IGBTs. • 175˚C maximum junction temperature.


    Original     		PDF IRGSL4062D IRGS4062D IRGS4064D IRGS4056D IRGR4045D IRGB4059D IRGB4045D IRGB4060D IRGB4064D IRGB4056D IGBT for welding inverter IRGP4066D irgps4067d SOLAR INVERTER IRGP4066D-E welding inverter circuit IRGPS4067 IRGP4063D welding igbt igbt welding circuit

    igbt induction cooker

    Abstract: induction cooker application notes siemens igbt 28N120B IXGH 28N120B
    Text: High Voltage IGBT Preliminary Data Sheet IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM


    Original     		PDF 28N120B IC110 O-268 O-247 728B1 123B1 728B1 065B1 28N120B igbt induction cooker induction cooker application notes siemens igbt IXGH 28N120B

    APT10035LLL

    Abstract: APT27GA90BD15 MIC4452 BY 126 DIODE DYNAMIC RESISTANCE 14A 600V TO247 IGBT 14A144
    Text: APT27GA90BD15 900V High Speed PT IGBT T O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT27GA90BD15 APT10035LLL APT27GA90BD15 MIC4452 BY 126 DIODE DYNAMIC RESISTANCE 14A 600V TO247 IGBT 14A144

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT Preliminary Data Sheet IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM


    Original     		PDF 28N120B IC110 O-268 O-247 728B1 123B1 065B1

    IXGH 28N120BD1

    Abstract: No abstract text available
    Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 = 1200 = 50 = 3.5 = 160 tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM


    Original     		PDF 28N120BD1 28N120BD1 IC110 O-247AD O-268 O-247) 405B2 IXGH 28N120BD1

    4525 GE

    Abstract: IXGK28N140 IF110 PLUS247 ge 734 ixgk28n140b3h1
    Text: Preliminary Technical Information IXGH28N140B3H1 IXGK28N140B3H1 IXGX28N140B3H1 High Voltage Co-Pack IGBT VCES = 1400 V IC25 = 60 A VCE sat ≤ 3.6 V Avalanche Rated Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1400 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF IXGH28N140B3H1 IXGK28N140B3H1 IXGX28N140B3H1 IC110 IF110 4525 GE IXGK28N140 IF110 PLUS247 ge 734 ixgk28n140b3h1

    7N60a4

    Abstract: HGTG7N60A4 equivalent HGTP7N60A4 HGT1S7N60A4S HGTD7N60A4S HGTD7N60A4S9A HGTG7N60A4 TA49331
    Text: HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4, HGTP7N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBT Features The HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and


    Original     		PDF HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4, HGTP7N60A4 HGTG7N60A4 HGTP7N60A4 150oC. 100kHz 7N60a4 HGTG7N60A4 equivalent HGT1S7N60A4S HGTD7N60A4S HGTD7N60A4S9A TA49331

    7n60a4

    Abstract: 8508 zener HGT1S7N60A4S HGTD7N60A4S HGTD7N60A4S9A HGTG7N60A4 HGTP7N60A4 TA49331
    Text: TM HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4, HGTP7N60A4 Data Sheet June 2000 File Number 600V, SMPS Series N-Channel IGBT Features The HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and


    Original     		PDF HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4, HGTP7N60A4 HGTG7N60A4 HGTP7N60A4 150oC. 100kHz 7n60a4 8508 zener HGT1S7N60A4S HGTD7N60A4S HGTD7N60A4S9A TA49331

    IXGH 28N120BD1

    Abstract: No abstract text available
    Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		PDF 28N120BD1 28N120BD1 IC110 O-247AD O-268 O-247) Fea140 IXGH 28N120BD1

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 = 1200 = 50 = 3.5 = 160 tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM


    Original     		PDF 28N120BD1 28N120BD1 IC110 O-247AD O-268 O-247)

    Untitled

    Abstract: No abstract text available
    Text: HGTD7N60A4S, HGTG7N60A4, HGTP7N60A4 TM Data Sheet March 2000 File Number 600V, SMPS Series N-Channel IGBT Features The HGTD7N60A4S, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These


    Original     		PDF HGTD7N60A4S, HGTG7N60A4, HGTP7N60A4 HGTG7N60A4 HGTP7N60A4 150oC. TA49331.

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXFA14N60P3 IXFP14N60P3 IXFH14N60P3 Polar3 TM HiPerFETTM Power MOSFETs VDSS ID25 = 600V = 14A  540m  RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 (IXFA) G S D (Tab) TO-220 (IXFP)


    Original     		PDF IXFA14N60P3 IXFP14N60P3 IXFH14N60P3 O-263 O-220 IXFA14N60P3 14N60P3

    IXFQ28N60P3

    Abstract: No abstract text available
    Text: Advance Technical Information IXFQ28N60P3 IXFH28N60P3 Polar3TM HiperFETTM Power MOSFETs VDSS ID25 = 600V = 28A Ω ≤ 260mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-3P (IXFQ) G D Symbol Test Conditions Maximum Ratings


    Original     		PDF IXFQ28N60P3 IXFH28N60P3 O-247 28N60P3

    14n60

    Abstract: ixfa14n60
    Text: PolarHVTM HiperFET Power MOSFET VDSS ID25 IXFA14N60P IXFP14N60P IXFH14N60P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 600V = 14A Ω ≤ 550mΩ ≤ 200ns TO-263 G S (TAB) TO-220 Symbol Test Conditions Maximum Ratings VDSS


    Original     		PDF IXFA14N60P IXFP14N60P IXFH14N60P 200ns O-263 O-220 14N60P 14n60 ixfa14n60