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    28N120 Search Results

    28N120 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SiT1602BC-12-28N-12.000000 SiTime 3.57 to 77.76 MHz, Low Power Oscillator Datasheet
    SiT1602BC-71-28N-12.000000 SiTime 3.57 to 77.76 MHz, Low Power Oscillator Datasheet
    SiT1602BI-73-28N-12.000000 SiTime 3.57 to 77.76 MHz, Low Power Oscillator Datasheet
    SiT1602BC-32-28N-12.000000 SiTime 3.57 to 77.76 MHz, Low Power Oscillator Datasheet
    SiT1602BC-23-28N-12.000000 SiTime 3.57 to 77.76 MHz, Low Power Oscillator Datasheet
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    28N120 Price and Stock

    IXYS Corporation IXGQ28N120BD1

    IGBT 1200V 50A 250W TO3P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGQ28N120BD1 Tube
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    IXYS Corporation IXGH28N120BD1

    IGBT 1200V 50A 250W TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGH28N120BD1 Tube
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    Micro Commercial Components SICW028N120A4-BP

    MOSFET N-CH 1200 V 80A TO247-4
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SICW028N120A4-BP Tube 1
    • 1 $21.73
    • 10 $20.045
    • 100 $17.1175
    • 1000 $15.54088
    • 10000 $15.54088
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    Mouser Electronics SICW028N120A4-BP
    • 1 $21.75
    • 10 $20.05
    • 100 $17.12
    • 1000 $15.55
    • 10000 $15.55
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    SiTime Corporation SIT1602BI-21-28N-12.000000

    MEMS OSC XO 12.0000MHZ H/LV-CMOS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIT1602BI-21-28N-12.000000 1
    • 1 $1.5
    • 10 $1.438
    • 100 $1.2036
    • 1000 $0.98632
    • 10000 $0.8693
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    SiTime Corporation SIT1602BI-11-28N-12.000000

    MEMS OSC XO 12.0000MHZ H/LV-CMOS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIT1602BI-11-28N-12.000000 1
    • 1 $1.51
    • 10 $1.439
    • 100 $1.2044
    • 1000 $0.98691
    • 10000 $0.86982
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    28N120 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    igbt induction cooker

    Abstract: induction cooker application notes siemens igbt 28N120B IXGH 28N120B
    Text: High Voltage IGBT Preliminary Data Sheet IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM


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    PDF 28N120B IC110 O-268 O-247 728B1 123B1 728B1 065B1 28N120B igbt induction cooker induction cooker application notes siemens igbt IXGH 28N120B

    IXGQ28N120B

    Abstract: 28N120 induction cooker application notes IXGQ28N120BD1
    Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGQ 28N120B IXGQ 28N120BD1 tfi(typ) = 1200 = 50 = 3.5 = 160 V A V ns D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous


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    PDF 28N120B 28N120BD1 IC110 065B1 728B1 123B1 728B1 IXGQ28N120B 28N120 induction cooker application notes IXGQ28N120BD1

    igbt induction cooker

    Abstract: No abstract text available
    Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30


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    PDF 28N120BD1 IC110 O-268 0-12A/DSEC 0-12A igbt induction cooker

    IXGH 28N120BD1

    Abstract: No abstract text available
    Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 = 1200 = 50 = 3.5 = 160 tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM


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    PDF 28N120BD1 28N120BD1 IC110 O-247AD O-268 O-247) 405B2 IXGH 28N120BD1

    28N120

    Abstract: No abstract text available
    Text: High Voltage IGBT IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25


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    PDF 28N120B IC110 O-268 O-247 28N120

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25


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    PDF 28N120B IC110 O-268 O-247

    IXGH 28N120BD1

    Abstract: No abstract text available
    Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30


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    PDF 28N120BD1 28N120BD1 IC110 O-247AD O-268 O-247) Fea140 IXGH 28N120BD1

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGQ 28N120B IXGQ 28N120BD1 tfi(typ) = 1200 = 50 = 3.5 = 160 V A V ns D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous


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    PDF 28N120B 28N120BD1 IC110 065B1 728B1 123B1 728B1

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 = 1200 = 50 = 3.5 = 160 tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM


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    PDF 28N120BD1 28N120BD1 IC110 O-247AD O-268 O-247)

    28N120

    Abstract: igbt induction cooker Siemens induction cooker IXGP28N120B igbt for induction heating ic induction cooker induction cooker application notes induction heating ic 28N12 C27056
    Text: High Voltage IGBT IXGP 28N120B VCES = 1200 V = 50 A IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C


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    PDF 28N120B IC110 O-220 28N120B 28N120 igbt induction cooker Siemens induction cooker IXGP28N120B igbt for induction heating ic induction cooker induction cooker application notes induction heating ic 28N12 C27056

    IXGH 28N120BD1

    Abstract: igbt induction cooker 28N120
    Text: Advanced Technical Data High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 = 1200 = 50 = 3.5 = 160 tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES


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    PDF 28N120BD1 IXGH 28N120BD1 igbt induction cooker 28N120

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT Preliminary Data Sheet IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM


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    PDF 28N120B IC110 O-268 O-247 728B1 123B1 065B1

    28N120B

    Abstract: RG201
    Text: Advanced Technical Data High Voltage IGBT IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous


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    PDF 28N120B O-268 O-247 728B1 123B1 065B1 RG201

    7N60B equivalent

    Abstract: 60N60B2-7Y 7N60C-2X 7N60B-2X 10n60b ixgd 28N12 60N60C2-7Y 20N120 16N60C2
    Text: Chip-Shortform2004.pmd Insulated Gate Bipolar Transistors G-Series Type VCES VCE sat @ IC Chip type Chip size dimensions 6 TJM = 150°C V V A mm mils Source bond wire Equivalent device recommended data sheet 26.10.2004, 12:44 High Gain High Gain High Gain


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    PDF 7N60B-2X 7N60C-2X 16N60B2-3X 16N60C2-3X 30N60B2-4X 30N60C2-4X 40N60B2-5Y 40N60C2-5Y 60N60B2-7Y 60N60C2-7Y 7N60B equivalent 10n60b ixgd 28N12 20N120 16N60C2