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    IXGK28N140 Price and Stock

    IXYS Corporation IXGK28N140B3H1

    IGBT 1400V 60A 300W TO264
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    DigiKey IXGK28N140B3H1 Tube
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    Bristol Electronics IXGK28N140B3H1 25
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    Quest Components IXGK28N140B3H1 20
    • 1 $14.52
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    Littelfuse Inc IXGK28N140B3H1

    Disc Igbt Pt-Mid Frequency To-264(3)/Tube |Littelfuse IXGK28N140B3H1
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    Newark IXGK28N140B3H1 Bulk 25
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    IXYS Integrated Circuits Division IXGK28N140B3H1

    IGBT DIS.DIODE SINGLE 28A 1400V GENX3 TO264
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    Ozdisan Elektronik IXGK28N140B3H1
    • 1 $8.02043
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    • 100 $7.2913
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    IXGK28N140 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXGK28N140B3H1 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 1400V 60A 300W TO264 Original PDF

    IXGK28N140 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: GenX3TM 1400V IGBTs w/ Diode IXGH28N140B3H1 IXGX28N140B3H1 IXGK28N140B3H1 Avalanche Rated VCES = 1400V IC110 = 28A VCE sat ≤ 3.60V TO-247 (IXGH) G Symbol Test Conditions VCES TJ = 25°C to 150°C 1400 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1400 V VGES


    Original     		PDF IXGH28N140B3H1 IXGX28N140B3H1 IXGK28N140B3H1 IC110 O-247 IF110 28N140B3H1 11-29-10-B

    4525 GE

    Abstract: IXGK28N140 IF110 PLUS247 ge 734 ixgk28n140b3h1
    Text: Preliminary Technical Information IXGH28N140B3H1 IXGK28N140B3H1 IXGX28N140B3H1 High Voltage Co-Pack IGBT VCES = 1400 V IC25 = 60 A VCE sat ≤ 3.6 V Avalanche Rated Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1400 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF IXGH28N140B3H1 IXGK28N140B3H1 IXGX28N140B3H1 IC110 IF110 4525 GE IXGK28N140 IF110 PLUS247 ge 734 ixgk28n140b3h1

    IXGK28N140B3H1

    Abstract: IXGX28N140B3H1 IXGH28N140B3H1 28n140b3h1 IXGK28N140
    Text: IXGH28N140B3H1 IXGX28N140B3H1 IXGK28N140B3H1 GenX3TM 1400V IGBTs w/ Diode Avalanche Rated VCES = 1400V IC110 = 28A VCE sat ≤ 3.60V TO-247 (IXGH) G Symbol Test Conditions VCES TJ = 25°C to 150°C 1400 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1400 V VGES


    Original     		PDF IXGH28N140B3H1 IXGX28N140B3H1 IXGK28N140B3H1 IC110 O-247 IC110 IF110 PLUS247 O-264 Indu60V IXGK28N140B3H1 28n140b3h1 IXGK28N140

    IXGP70N33

    Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
    Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim


    Original     		PDF D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250