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    Microchip Technology Inc APT27GA90SD15

    Transistor IGBT N-CH 900V 48A 3-Pin D3PAK (Alt: APT27GA90SD15)
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    Avnet Silica APT27GA90SD15 38 Weeks 1
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    APT27GA90SD15 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    APT27GA90SD15 Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: D3; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 27; Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: APT27GA90BD15 APT27GA90SD15 900V High Speed PT IGBT B TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT27GA90BD15 APT27GA90SD15 APP11

    full wave BRIDGE RECTIFIER

    Abstract: No abstract text available
    Text: APT27GA90BD15 APT27GA90SD15 900V High Speed PT IGBT B TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT27GA90BD15 APT27GA90SD15 Ver13 full wave BRIDGE RECTIFIER

    APT27GA90BD15

    Abstract: APT27GA90SD15 MIC4452 SD15
    Text: APT27GA90BD15 APT27GA90SD15 900V High Speed PT IGBT B TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT27GA90BD15 APT27GA90SD15 APT27GA90BD15 APT27GA90SD15 MIC4452 SD15