Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IXGK28N140B3H1 Search Results

    SF Impression Pixel

    IXGK28N140B3H1 Price and Stock

    IXYS Corporation IXGK28N140B3H1

    IGBT 1400V 60A 300W TO264
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGK28N140B3H1 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Future Electronics IXGK28N140B3H1 Tube 27 Weeks 25
    • 1 -
    • 10 -
    • 100 $6.05
    • 1000 $6.05
    • 10000 $6.05
    		Buy Now
    Bristol Electronics IXGK28N140B3H1 25
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Quest Components IXGK28N140B3H1 20
    • 1 $14.52
    • 10 $9.68
    • 100 $9.68
    • 1000 $9.68
    • 10000 $9.68
    		Buy Now

    IXYS Integrated Circuits Division IXGK28N140B3H1

    IGBT DIS.DIODE SINGLE 28A 1400V GENX3 TO264
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXGK28N140B3H1
    • 1 $7.85906
    • 10 $7.85906
    • 100 $7.1446
    • 1000 $7.1446
    • 10000 $7.1446
    		Get Quote

    IXGK28N140B3H1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXGK28N140B3H1 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 1400V 60A 300W TO264 Original PDF

    IXGK28N140B3H1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: GenX3TM 1400V IGBTs w/ Diode IXGH28N140B3H1 IXGX28N140B3H1 IXGK28N140B3H1 Avalanche Rated VCES = 1400V IC110 = 28A VCE sat ≤ 3.60V TO-247 (IXGH) G Symbol Test Conditions VCES TJ = 25°C to 150°C 1400 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1400 V VGES


    Original     		PDF IXGH28N140B3H1 IXGX28N140B3H1 IXGK28N140B3H1 IC110 O-247 IF110 28N140B3H1 11-29-10-B

    4525 GE

    Abstract: IXGK28N140 IF110 PLUS247 ge 734 ixgk28n140b3h1
    Text: Preliminary Technical Information IXGH28N140B3H1 IXGK28N140B3H1 IXGX28N140B3H1 High Voltage Co-Pack IGBT VCES = 1400 V IC25 = 60 A VCE sat ≤ 3.6 V Avalanche Rated Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1400 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF IXGH28N140B3H1 IXGK28N140B3H1 IXGX28N140B3H1 IC110 IF110 4525 GE IXGK28N140 IF110 PLUS247 ge 734 ixgk28n140b3h1

    IXGK28N140B3H1

    Abstract: IXGX28N140B3H1 IXGH28N140B3H1 28n140b3h1 IXGK28N140
    Text: IXGH28N140B3H1 IXGX28N140B3H1 IXGK28N140B3H1 GenX3TM 1400V IGBTs w/ Diode Avalanche Rated VCES = 1400V IC110 = 28A VCE sat ≤ 3.60V TO-247 (IXGH) G Symbol Test Conditions VCES TJ = 25°C to 150°C 1400 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1400 V VGES


    Original     		PDF IXGH28N140B3H1 IXGX28N140B3H1 IXGK28N140B3H1 IC110 O-247 IC110 IF110 PLUS247 O-264 Indu60V IXGK28N140B3H1 28n140b3h1 IXGK28N140

    IXGP70N33

    Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
    Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim


    Original     		PDF D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250