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    140N1 Search Results

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    140N1 Price and Stock

    Infineon Technologies AG IKQ140N120CH7XKSA1

    IGBT TRENCH FS 1200V 175A TO247
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    DigiKey IKQ140N120CH7XKSA1 Tube 623 1
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    Mouser Electronics IKQ140N120CH7XKSA1 1,172
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    Newark IKQ140N120CH7XKSA1 Bulk 206 1
    • 1 $18.35
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    onsemi FQA140N10

    MOSFET N-CH 100V 140A TO3PN
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    DigiKey FQA140N10 Tube 573 1
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    Avnet Americas FQA140N10 Tube 16 Weeks 450
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    Mouser Electronics FQA140N10 1,608
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    Newark FQA140N10 Bulk 450
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    Rochester Electronics FQA140N10 52 1
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    TME FQA140N10 1
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    Richardson RFPD FQA140N10 450
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    Avnet Asia FQA140N10 16 Weeks 450
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    Avnet Silica FQA140N10 17 Weeks 30
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    EBV Elektronik FQA140N10 60 18 Weeks 30
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    New Advantage Corporation FQA140N10 60 1
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    Infineon Technologies AG IKY140N120CH7XKSA1

    IGBT TRENCH FS 1200V 232A TO247
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    DigiKey IKY140N120CH7XKSA1 Tube 536 1
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    Avnet Americas IKY140N120CH7XKSA1 Tube 120 12 Weeks 240
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    Mouser Electronics IKY140N120CH7XKSA1 1,117
    • 1 $14.3
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    Newark IKY140N120CH7XKSA1 Bulk 227 1
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    EBV Elektronik IKY140N120CH7XKSA1 13 Weeks 240
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    Littelfuse Inc IXFH140N10P

    MOSFET N-CH 100V 140A TO247AD
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    DigiKey IXFH140N10P Tube 306 1
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    Newark IXFH140N10P Bulk 300
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    Torex Semiconductor LTD XC6140N16A9R-G

    VOLTAGE MONITORING IC FOR RECHAR
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    DigiKey XC6140N16A9R-G Cut Tape 200 1
    • 1 $0.54
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    • 100 $0.345
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    Mouser Electronics XC6140N16A9R-G 5,000
    • 1 $0.54
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    • 100 $0.321
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    140N1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXFH 140N10P VDSS ID25 PolarHVTM HiPerFET IXFT 140N10P Power MOSFETs = = = RDS on 100 V 140 A Ω 11 mΩ N-Channel Enhancement Mode Fast Intrinsic Diode; Avalanche Rated TO-247 (IXFT) Symbol Test Conditions Maximum Ratings VDSS


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    PDF 140N10P O-247 065B1 728B1 123B1 728B1

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET IXFH 140N10P IXFT 140N10P Power MOSFETs VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 100


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    PDF 140N10P

    140N1

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET IXFH 140N10P IXFT 140N10P Power MOSFETs VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 100


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    PDF 140N10P 140N1

    140N10P

    Abstract: 140n10
    Text: IXTQ 140N10P IXTT 140N10P PolarHTTM Power MOSFET VDSS ID25 RDS on = = ≤ 100 V 140 A Ω 11 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 100 100


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    PDF 140N10P 140N10P 140n10

    Untitled

    Abstract: No abstract text available
    Text: IXTQ 140N10P IXTT 140N10P PolarHTTM Power MOSFET VDSS ID25 RDS on = = ≤ 100 V 140 A Ω 11 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 100 100


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    PDF 140N10P

    140n10

    Abstract: No abstract text available
    Text: Advanced Technical Information IXTQ 140N10P IXTT 140N10P PolarHTTM Power MOSFET VDSS ID25 RDS on = = = 100 V 140 A Ω 11 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


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    PDF 140N10P O-268 065B1 728B1 123B1 728B1 140n10

    kta 3-25

    Abstract: Allen-Bradley 100-M09 KTL-3-65-N Allen-Bradley Overload relay 140-MN-1600 Allen-Bradley cat 140-mn-0400 Allen-Bradley Overload relay 140-MN-0250 Allen-Bradley cat 140-mn-1000 140M-K5F-D12 140M-K5F-D16 kry 112 76 1
    Text: Circuit-Breakers Bulletin 140 / KTA 3 Bulletin 140 / KTA 3 • • • • Motor Protection Characteristics High Switching Capacity High Current Limiting For Compact Motor Starters Overview . 2-2


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    PDF 140-MN 140-CMN 140M-K5F 3-160S 140M-M5F 3-250S 140M-P5F 3-400S 140M-K5F 3-160S) kta 3-25 Allen-Bradley 100-M09 KTL-3-65-N Allen-Bradley Overload relay 140-MN-1600 Allen-Bradley cat 140-mn-0400 Allen-Bradley Overload relay 140-MN-0250 Allen-Bradley cat 140-mn-1000 140M-K5F-D12 140M-K5F-D16 kry 112 76 1

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


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    PDF

    220FP

    Abstract: STH140N10F4-2
    Text: 140N10F4-2, 140N10F4 140N10F4 N-channel 100 V, 6.5 mΩ, 120 A TO-220, H2PAK, TO-220FP STripFET DeepGATE™ Power MOSFET Preliminary data Features Type VDSS RDS on max ID 140N10F4-2 100 V < 8.1 mΩ 120 A 140N10F4 100 V < 8.5 mΩ 50 A 140N10F4


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    PDF STH140N10F4-2, STF140N10F4 STP140N10F4 O-220, O-220FP STH140N10F4-2 O-220FP 220FP

    STP140N10F4

    Abstract: 745 diode STF140N10F4 STH140N10F4-2 sth140n10f4 140N1 140n10
    Text: 140N10F4-2, 140N10F4 140N10F4 N-channel 100 V, 6.5 mΩ, 120 A TO-220, H2PAK, TO-220FP STripFET DeepGATE™ Power MOSFET Preliminary data Features Type VDSS RDS on max ID 140N10F4-2 100 V < 8.1 mΩ 120 A 140N10F4 100 V < 8.5 mΩ 50 A 140N10F4


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    PDF STH140N10F4-2, STF140N10F4 STP140N10F4 O-220, O-220FP STH140N10F4-2 O-220 STP140N10F4 745 diode STF140N10F4 STH140N10F4-2 sth140n10f4 140N1 140n10

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


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    PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original
    PDF O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p

    IDQ25186

    Abstract: MA721 VSS1641NC IMX72 Li-49 39NC60 motorola bq50
    Text: Order ttis document by 5VFPMB72D/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1Mx72 DRAM Dual-In-Line Memory Module DIMM 5 V, FPM, Buffered For Error Correction Code Applications 8 Megabyte . JEDEC–Standard ● Single 5 V Power Supply, ~L_Compatible ● Fast Page Mode (FPM)


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    PDF 5VFPMB72D/D 1Mx72 MA721 BJ48TADG60 140N1-2 5VFPMB72D~ IDQ25186 VSS1641NC IMX72 Li-49 39NC60 motorola bq50

    DIODE 1334

    Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88
    Text: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205


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    PDF 110N055P-5S 75N10P-5S 110N10P-6S 140N10P-7S 170N10P-8S 200N10P-88 62N15P-5S 96N15P-6S 120N15P-7S 150N15P-8S DIODE 1334 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP