IRF614
Abstract: No abstract text available
Text: IRF614, SiHF614 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling Qgd (nC) 4.5 • Simple Drive Requirements Configuration
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IRF614,
SiHF614
O-220
O-220
18-Jul-08
IRF614
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IRF720S
Abstract: SiHF720S SiHF720S-E3
Text: IRF720S, SiHF720S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V 1.8 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration Single DESCRIPTION D Third generation Power MOSFETs from Vishay provide the
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IRF720S,
SiHF720S
O-263)
18-Jul-08
IRF720S
SiHF720S-E3
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IRFZ14L
Abstract: IRFZ14S SiHFZ44L IRFZ14STRL SiHFZ14L SiHFZ14L-E3 SiHFZ14S SiHFZ14S-E3 SiHFZ14STL
Text: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single D2PAK (TO-263) G G D S Advanced Process Technology Surface Mount (IRFZ14S, SiHFZ14S)
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IRFZ14S,
IRFZ14L,
SiHFZ14S
SiHFZ14L
O-263)
O-262)
IRFZ14L
IRFZ14S
SiHFZ44L
IRFZ14STRL
SiHFZ14L-E3
SiHFZ14S-E3
SiHFZ14STL
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IRLZ24L
Abstract: IRLZ24S SiHLZ24L SiHLZ24L-E3 SiHLZ24S
Text: IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 5 V 0.10 Qg (Max.) (nC) 18 Qgs (nC) 4.5 Qgd (nC) 12 Configuration Single G G D S RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the
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IRLZ24S,
IRLZ24L,
SiHLZ24S
SiHLZ24L
18-Jul-08
IRLZ24L
IRLZ24S
SiHLZ24L-E3
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V0008
Abstract: No abstract text available
Text: VFB2028N Vishay Foil Resistors Ultra High Precision Z-Foil BGA Surface Mount Resistor 4R Network, Temperature Coefficient Tracking 0.1 ppm/°C, Load Life Ratio Stability to ± 0.01 % 100 ppm , ESD Immunity to 25 kV FEATURES • Temperature coefficient of resistance (TCR):
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VFB2028N
18-Jul-08
V0008
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IRF737LC
Abstract: SiHF737LC SiHF737LC-E3 IRF737
Text: IRF737LC, SiHF737LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 300 RDS(on) (Ω) VGS = 10 V 0.75 Qg (Max.) (nC) 17 Qgs (nC) 4.8 Qgd (nC) 7.6 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve
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IRF737LC,
SiHF737LC
18-Jul-08
IRF737LC
SiHF737LC-E3
IRF737
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4.5V TO 100V INPUT REGULATOR
Abstract: No abstract text available
Text: IRFR430A, IRFU430A, SiHFR430A, SiHFU430A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 1.7 Qg (Max.) (nC) 24 Qgs (nC) 6.5 Qgd (nC) Ruggedness • Fully Characterized Capacitance and Avalanche Voltage
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IRFR430A,
IRFU430A,
SiHFR430A
SiHFU430A
O-252)
O-251)
IRFR430APbany
18-Jul-08
4.5V TO 100V INPUT REGULATOR
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40HFL40S02
Abstract: IRFP460 9449
Text: FCSP05H40TR Vishay High Power Products FlipKY Chip Scale Package Schottky Barrier Rectifier, 0.5 A FEATURES • Ultra low VF to footprint area • Very low profile < 0.6 mm • Low thermal resistance • Supplied tested and on tape and reel APPLICATIONS
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FCSP05H40TR
11-Mar-11
40HFL40S02
IRFP460
9449
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IRLI520G
Abstract: SiHLI520G
Text: IRLI520G, SiHLI520G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Logic-Level Gate Drive • RDS (on) Specified at VGS = 4 V and 5 V
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IRLI520G,
SiHLI520G
O-220
11-Mar-11
IRLI520G
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SiHLZ14S
Abstract: IRLZ14 IRLZ14L IRLZ14S SiHLZ14L SiHLZ14S-E3
Text: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) (Ω) VGS = 5 V 0.20 Qg (Max.) (nC) 8.4 Qgs (nC) 3.5 Qgd (nC) 6.0 Configuration Single G G S COMPLIANT Third generation Power MOSFETs from Vishay utilize
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IRLZ14S,
IRLZ14L,
SiHLZ14S
SiHLZ14L
18-Jul-08
IRLZ14
IRLZ14L
IRLZ14S
SiHLZ14S-E3
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IRFR9310
Abstract: IR*9310 IRFU9310 SiHFR9310 SiHFU9310 SiHFR9310-E3 SIHFR9310TL-E3
Text: IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 400 RDS(on) (Ω) VGS = - 10 V 7.0 Qg (Max.) (nC) 13 Qgs (nC) 3.2 Qgd (nC) 5.0 Configuration Single P-Channel Surface Mount (IRFR9310/SiHFR9310)
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IRFR9310,
IRFU9310,
SiHFR9310
SiHFU9310
IRFR9310/SiHFR9310)
IRFU9310/SiHFU9310)
O-252)
18-Jul-08
IRFR9310
IR*9310
IRFU9310
SiHFR9310-E3
SIHFR9310TL-E3
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IRLZ34L
Abstract: IRLZ34S SiHLZ34S
Text: IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • 60 RDS(on) (Ω) VGS = 5 V 0.05 Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration • Fast Switching • Fully Avalanche Rated Single
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IRLZ34S,
IRLZ34L,
SiHLZ34S
SiHLZ34L
O-262)
IRLT34S,
18-Jul-08
IRLZ34L
IRLZ34S
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IRFR020
Abstract: PDA56 IRFU020 SiHFR020 SIHFU020-E3 SiHFR020-E3 SiHFU020
Text: IRFR020, IRFU020, SiHFR020, SiHFU020 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V • Surface Mount (IRFR020, SiHFR020) 0.10 Qg (Max.) (nC) 25 • Available in Tape and Reel Qgs (nC) 5.8
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IRFR020,
IRFU020,
SiHFR020
SiHFU020
O-252)
O-251)
18-Jul-08
IRFR020
PDA56
IRFU020
SIHFU020-E3
SiHFR020-E3
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Untitled
Abstract: No abstract text available
Text: IRFI530G, SiHFI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating
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IRFI530G,
SiHFI530G
O-220
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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SiHFD123
Abstract: No abstract text available
Text: IRFD123, SiHFD123 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 0.27 RoHS* Qg (Max.) (nC) 16 • For Automatic Insertion Qgs (nC) 4.4 • End Stackable
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IRFD123,
SiHFD123
18-Jul-08
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CRBV55BE-2110-2170
Abstract: No abstract text available
Text: RedBox M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 2110 MHz 5.0 VDC 2170 MHz Tuning Voltage: Supply Voltage: 4.75 5.0 5.25 VDC +3.0 +6.0 dBm 11 15 mA -15 Output Power: Supply Current:
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10kHz
100kHz
12-Jan-09
CRBV55BE-2110-2170
CRBV55BE-2110-2170
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Untitled
Abstract: No abstract text available
Text: IRFI530G, SiHFI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating
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IRFI530G,
SiHFI530G
O-220
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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IRFI530GPBF
Abstract: 58AB IRFI530G SiHFI530G SiHFI530G-E3
Text: IRFI530G, SiHFI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating
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IRFI530G,
SiHFI530G
O-220
18-Jul-08
IRFI530GPBF
58AB
IRFI530G
SiHFI530G-E3
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82991
Abstract: IRFR220TRPBF IRFR220 IRFU220 SiHFR220 SiHFR220-E3
Text: IRFR220, IRFU220, SiHFR220, SiHFU220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V 0.80 Available • Repetitive Avalanche Rated Qg (Max.) (nC) 14 • Surface Mount (IRFR220, SiHFR220) Qgs (nC)
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IRFR220,
IRFU220,
SiHFR220
SiHFU220
O-252)
O-251)
82991
IRFR220TRPBF
IRFR220
IRFU220
SiHFR220-E3
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IRF620S
Abstract: SiHF620S SiHF620S-E3
Text: IRF620S, SiHF620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) (Ω) VGS = 10 V 0.80 Qg (Max.) (nC) 14 Qgs (nC) 3.0 Qgd (nC) 7.9 Configuration Single D D2PAK • • • • • • • • Surface Mount Available in Tape and Reel
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IRF620S,
SiHF620S
O-263)
18-Jul-08
IRF620S
SiHF620S-E3
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IRF624
Abstract: SiHF624 SiHF624-E3 irf624p
Text: IRF624, SiHF624 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.1 RoHS* Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 2.7 • Ease of Paralleling Qgd (nC)
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IRF624,
SiHF624
O-220
O-220
18-Jul-08
IRF624
SiHF624-E3
irf624p
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910.26
Abstract: IRF614S
Text: IRF614S, SiHF614S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) (Ω) VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D • • • • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating
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IRF614S,
SiHF614S
O-263)
18-Jul-08
910.26
IRF614S
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IRF540S
Abstract: IRF540 SiHF540S IRF540SPBF SiHF540S-E3 91022
Text: IRF540S, SiHF540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration • • • • • • • • 100 VGS = 10 V 0.077 72 11 32 Single Surface Mount Available in Tape and Reel Dynamic dV/dt Rating
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IRF540S,
SiHF540S
O-263)
18-Jul-08
IRF540S
IRF540
IRF540SPBF
SiHF540S-E3
91022
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SiHLI520G
Abstract: No abstract text available
Text: IRLI520G, SiHLI520G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Logic-Level Gate Drive • RDS (on) Specified at VGS = 4 V and 5 V
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IRLI520G,
SiHLI520G
O-220
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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