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    IRF737 Price and Stock

    Infineon Technologies AG IRF7379

    MOSFET N/P-CH 30V 5.8A/4.3A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF7379 Tube 95
    • 1 -
    • 10 -
    • 100 $2.41968
    • 1000 $2.41968
    • 10000 $2.41968
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    Vishay Siliconix IRF737LC

    MOSFET N-CH 300V 6.1A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF737LC Tube 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.9875
    • 10000 $1.9875
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    Infineon Technologies AG IRF7379TR

    MOSFET N/P-CH 30V 5.8A/4.3A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF7379TR Reel 4,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.7325
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    Vishay Siliconix IRF737LCS

    MOSFET N-CH 300V 6.1A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF737LCS Tube 400
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.07155
    • 10000 $1.07155
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    Infineon Technologies AG AUIRF7379Q

    MOSFET N/P-CH 30V 5.8A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AUIRF7379Q Tube
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    Find more IRF737 price and stock on Findchips.com

    IRF737 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF7379 International Rectifier HEXFET Power MOSFET Original PDF
    IRF7379IPBF International Rectifier Original PDF
    IRF7379PBF International Rectifier Original PDF
    IRF7379QPBF International Rectifier HEXFET Power MOSFET Original PDF
    IRF7379QTRPBF International Rectifier FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 30V 8-SOIC Original PDF
    IRF7379QTRPBF International Rectifier 30V Dual N- and P- Channel HEXFET Power MOSFET in a Lead-Free SO-8 package Original PDF
    IRF7379TR International Rectifier 30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package Original PDF
    IRF7379TRPBF International Rectifier Original PDF
    IRF737LC International Rectifier HEXFET Power MOSFET Original PDF
    IRF737LC Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF737LC Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 300V 6.1A TO-220AB Original PDF
    IRF737LC Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF737LCPBF International Rectifier HEXFET Power MOSFET Original PDF
    IRF737LCPBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 300V 6.1A TO-220AB Original PDF

    IRF737 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    f 1010

    Abstract: 7105 irf1010
    Text: PD - 95947 IRF737LCPbF • Lead-Free www.irf.com 12/20/04 IRF737LCPbF 2 www.irf.com IRF737LCPbF www.irf.com 3 IRF737LCPbF 4 www.irf.com IRF737LCPbF www.irf.com 5 IRF737LCPbF 6 www.irf.com IRF737LCPbF www.irf.com 7 IRF737LCPbF TO-220AB Package Outline TO-220AB Part Marking Information


    Original     		PDF IRF737LCPbF O-220AB f 1010 7105 irf1010

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1314 IRF737LC PRELIMINARY HEXFET Power MOSFET Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS Extremely High Frequency Operation Repetitive Avalanche Rated VDSS = 300V RDS on = 0.75Ω ID = 6.1A Description This new series of Low Charge HEXFETs achieve


    Original     		PDF IRF737LC 08-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: PD - 95947 IRF737LCPbF • Lead-Free 12/20/04 Document Number: 91050 www.vishay.com 1 IRF737LCPbF Document Number: 91050 www.vishay.com 2 IRF737LCPbF Document Number: 91050 www.vishay.com 3 IRF737LCPbF Document Number: 91050 www.vishay.com 4 IRF737LCPbF Document Number: 91050


    Original     		PDF IRF737LCPbF O-220AB

    IRF737LC

    Abstract: SiHF737LC SiHF737LC-E3 IRF737
    Text: IRF737LC, SiHF737LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 300 RDS(on) (Ω) VGS = 10 V 0.75 Qg (Max.) (nC) 17 Qgs (nC) 4.8 Qgd (nC) 7.6 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve


    Original     		PDF IRF737LC, SiHF737LC 18-Jul-08 IRF737LC SiHF737LC-E3 IRF737

    Untitled

    Abstract: No abstract text available
    Text: PD - 95947 IRF737LCPbF • Lead-Free 12/20/04 Document Number: 91050 www.vishay.com 1 IRF737LCPbF Document Number: 91050 www.vishay.com 2 IRF737LCPbF Document Number: 91050 www.vishay.com 3 IRF737LCPbF Document Number: 91050 www.vishay.com 4 IRF737LCPbF Document Number: 91050


    Original     		PDF IRF737LCPbF O-220AB

    84Fo

    Abstract: IRF7379 EIA48
    Text: PD - 91625 IRF7379 HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Avalanche Rated S1 G1 S2 G2 N -C H A N N EL M O S FET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS N-Ch P-Ch 30V -30V RDS on 0.045Ω 0.090Ω


    Original     		PDF IRF7379 84Fo IRF7379 EIA48

    MS-012AA

    Abstract: No abstract text available
    Text: PD - 95300 IRF7379PbF HEXFET Power MOSFET l l l l l l Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Avalanche Rated Lead-Free S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 VDSS N-Ch P-Ch 30V -30V


    Original     		PDF IRF7379PbF EIA-481 EIA-541. MS-012AA

    IRF1010

    Abstract: No abstract text available
    Text: IRF737LC Package Outline TO-220AB Outline Dimensions are shown in millimeters inches 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600)


    Original     		PDF IRF737LC O-220AB IRF1010 IRF1010

    Transistor Mosfet N-Ch 30V

    Abstract: No abstract text available
    Text: PD - 96111A IRF7379QPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free 6   '


    Original     		PDF 6111A IRF7379QPbF EIA-481 EIA-541. Transistor Mosfet N-Ch 30V

    Untitled

    Abstract: No abstract text available
    Text: PD - 96111 IRF7379QPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free S1 N-CHANNEL MOSFET


    Original     		PDF IRF7379QPbF EIA-481 EIA-541.

    IRF1010

    Abstract: TO-220 JEDEC b 0316 marking 221 part marking ab Package outline To220ab JEDEC OUTLINE marking 1145 647 marking
    Text: IRF737LC Package Outline HEXFET TO-220AB Outline Dimensions are shown in millimeters inches 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600)


    Original     		PDF IRF737LC O-220AB IRF1010 IRF1010 TO-220 JEDEC b 0316 marking 221 part marking ab Package outline To220ab JEDEC OUTLINE marking 1145 647 marking

    irf1010

    Abstract: marking 221
    Text: IRF737LC Package Outline TO-220AB Outline Dimensions are shown in millimeters inches 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600)


    Original     		PDF IRF737LC O-220AB IRF1010 irf1010 marking 221

    TRANSISTORS 132 GD

    Abstract: IRF1010 IRF737LC
    Text: PD - 9.1314 IRF737LC PRELIMINARY HEXFET Power MOSFET Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS Extremely High Frequency Operation Repetitive Avalanche Rated VDSS = 300V RDS on = 0.75Ω ID = 6.1A Description This new series of Low Charge HEXFETs achieve


    Original     		PDF IRF737LC IRF1010 TRANSISTORS 132 GD IRF1010 IRF737LC

    Untitled

    Abstract: No abstract text available
    Text: PD - 96111B IRF7379QPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1


    Original     		PDF 96111B IRF7379QPbF EIA-481 EIA-541.

    Untitled

    Abstract: No abstract text available
    Text: IRF737LC, SiHF737LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 300 RDS(on) (Ω) VGS = 10 V 0.75 Qg (Max.) (nC) 17 Qgs (nC) 4.8 Qgd (nC) 7.6 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve


    Original     		PDF IRF737LC, SiHF737LC 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: PD - 96089 IRF7379IPbF HEXFET Power MOSFET l l l l l l Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Avalanche Rated Lead-Free S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 VDSS N-Ch P-Ch 30V -30V


    Original     		PDF IRF7379IPbF EIA-481 EIA-541.

    TRANSISTORS 132 GD

    Abstract: IRF1010 IRF737LC
    Text: PD - 9.1314 IRF737LC PRELIMINARY HEXFET Power MOSFET Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS Extremely High Frequency Operation Repetitive Avalanche Rated VDSS = 300V RDS on = 0.75Ω ID = 6.1A Description This new series of Low Charge HEXFETs achieve


    Original     		PDF IRF737LC 12-Mar-07 TRANSISTORS 132 GD IRF1010 IRF737LC

    TRANSISTORS 132 GD

    Abstract: IRF1010 IRF737LC
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1314 IRF737LC PRELIMINARY HEXFET Power MOSFET Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS Extremely High Frequency Operation Repetitive Avalanche Rated VDSS = 300V RDS on = 0.75Ω


    Original     		PDF IRF737LC IRF1010 TRANSISTORS 132 GD IRF1010 IRF737LC

    Untitled

    Abstract: No abstract text available
    Text: PD - 96089 IRF7379IPbF HEXFET Power MOSFET l l l l l l Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Avalanche Rated Lead-Free S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 Description VDSS N-Ch


    Original     		PDF IRF7379IPbF EIA-481 EIA-541.

    irf MOSFET p-CH

    Abstract: No abstract text available
    Text: PD - 96111B IRF7379QPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1


    Original     		PDF 96111B IRF7379QPbF thi61 EIA-481 EIA-541. irf MOSFET p-CH

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    sumida 94V-0

    Abstract: inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET
    Text: International Rectifier The IGBT SIP & HEXPak Navigator Effective 8 September, EXISTING Products NEW Products UPCOMING Products POTENTIAL Products released to production in last 6-9 months to be released within next 3-4 months no current plans. see bus.mgmt.


    Original     		PDF IRFK2D054 IRFK2F054 CPV362M4U CPV363M4U CPV364M4U CPV362M4F CPV363M4F CPV364M4F CPV362M4K CPV363M4K sumida 94V-0 inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET

    Untitled

    Abstract: No abstract text available
    Text: International S Rectifier PD 91314 IRF737LC preliminary HEXFET^ Power MOSFET • Reduced Gate Drive Requirement • Enhanced 30V V qs Rating • Reduced Ciss. Coss> C rss • Extrem ely High Frequency Operation • Repetitive Avalanche Rated Voss = 300V RDS on =


    OCR Scan     		PDF IRF737LC 002305b

    IRF737LCL

    Abstract: f1010h
    Text: PD - 9.1314 International M Rectifier IRF737LC PRELIMINARY HEXFET Power MOSFET • • • • • Reduced Gate Drive Requirement Enhanced 30V Vqs Rating Reduced Qss, Coss, Extremely High Frequency Operation Repetitive Avalanche Rated VDSS = 300V ^ D S o n =


    OCR Scan     		PDF IRF737LC IRF737LCL f1010h