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    Untitled

    Abstract: No abstract text available
    Text: IRFI530G, SiHFI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating


    Original
    PDF IRFI530G, SiHFI530G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRFI530G, SiHFI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating


    Original
    PDF IRFI530G, SiHFI530G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRFI530GPBF

    Abstract: 58AB IRFI530G SiHFI530G SiHFI530G-E3
    Text: IRFI530G, SiHFI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating


    Original
    PDF IRFI530G, SiHFI530G O-220 18-Jul-08 IRFI530GPBF 58AB IRFI530G SiHFI530G-E3

    Untitled

    Abstract: No abstract text available
    Text: IRFI530G, SiHFI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating


    Original
    PDF IRFI530G, SiHFI530G O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHFI530G, IRFI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating


    Original
    PDF SiHFI530G IRFI530G O-220 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SiHFI530G, IRFI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating


    Original
    PDF SiHFI530G IRFI530G O-220 12-Mar-07

    AN609

    Abstract: IRFI530G SiHFI530G
    Text: IRFI530G_RC, SiHFI530G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    PDF IRFI530G SiHFI530G AN609, 20-Apr-10 AN609

    Untitled

    Abstract: No abstract text available
    Text: IRFI530G, SiHFI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating


    Original
    PDF IRFI530G, SiHFI530G O-220 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRFI530G Power MOSFET TO-220 FULLPAK D FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS t = 60 s; f = 60 Hz • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating • Low Thermal Resistance


    Original
    PDF IRFI530G O-220