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    IRF737LC Price and Stock

    Vishay Siliconix IRF737LC

    MOSFET N-CH 300V 6.1A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF737LC Tube 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.9875
    • 10000 $1.9875
    		Buy Now

    Vishay Siliconix IRF737LCS

    MOSFET N-CH 300V 6.1A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF737LCS Tube 400
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.07538
    • 10000 $1.07538
    		Buy Now

    IRF737LC Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF737LC International Rectifier HEXFET Power MOSFET Original PDF
    IRF737LC Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF737LC Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 300V 6.1A TO-220AB Original PDF
    IRF737LC Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF737LCPBF International Rectifier HEXFET Power MOSFET Original PDF
    IRF737LCPBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 300V 6.1A TO-220AB Original PDF

    IRF737LC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    f 1010

    Abstract: 7105 irf1010
    Text: PD - 95947 IRF737LCPbF • Lead-Free www.irf.com 12/20/04 IRF737LCPbF 2 www.irf.com IRF737LCPbF www.irf.com 3 IRF737LCPbF 4 www.irf.com IRF737LCPbF www.irf.com 5 IRF737LCPbF 6 www.irf.com IRF737LCPbF www.irf.com 7 IRF737LCPbF TO-220AB Package Outline TO-220AB Part Marking Information


    Original     		PDF IRF737LCPbF O-220AB f 1010 7105 irf1010

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1314 IRF737LC PRELIMINARY HEXFET Power MOSFET Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS Extremely High Frequency Operation Repetitive Avalanche Rated VDSS = 300V RDS on = 0.75Ω ID = 6.1A Description This new series of Low Charge HEXFETs achieve


    Original     		PDF IRF737LC 08-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: PD - 95947 IRF737LCPbF • Lead-Free 12/20/04 Document Number: 91050 www.vishay.com 1 IRF737LCPbF Document Number: 91050 www.vishay.com 2 IRF737LCPbF Document Number: 91050 www.vishay.com 3 IRF737LCPbF Document Number: 91050 www.vishay.com 4 IRF737LCPbF Document Number: 91050


    Original     		PDF IRF737LCPbF O-220AB

    IRF737LC

    Abstract: SiHF737LC SiHF737LC-E3 IRF737
    Text: IRF737LC, SiHF737LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 300 RDS(on) (Ω) VGS = 10 V 0.75 Qg (Max.) (nC) 17 Qgs (nC) 4.8 Qgd (nC) 7.6 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve


    Original     		PDF IRF737LC, SiHF737LC 18-Jul-08 IRF737LC SiHF737LC-E3 IRF737

    Untitled

    Abstract: No abstract text available
    Text: PD - 95947 IRF737LCPbF • Lead-Free 12/20/04 Document Number: 91050 www.vishay.com 1 IRF737LCPbF Document Number: 91050 www.vishay.com 2 IRF737LCPbF Document Number: 91050 www.vishay.com 3 IRF737LCPbF Document Number: 91050 www.vishay.com 4 IRF737LCPbF Document Number: 91050


    Original     		PDF IRF737LCPbF O-220AB

    IRF1010

    Abstract: No abstract text available
    Text: IRF737LC Package Outline TO-220AB Outline Dimensions are shown in millimeters inches 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600)


    Original     		PDF IRF737LC O-220AB IRF1010 IRF1010

    IRF1010

    Abstract: TO-220 JEDEC b 0316 marking 221 part marking ab Package outline To220ab JEDEC OUTLINE marking 1145 647 marking
    Text: IRF737LC Package Outline HEXFET TO-220AB Outline Dimensions are shown in millimeters inches 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600)


    Original     		PDF IRF737LC O-220AB IRF1010 IRF1010 TO-220 JEDEC b 0316 marking 221 part marking ab Package outline To220ab JEDEC OUTLINE marking 1145 647 marking

    irf1010

    Abstract: marking 221
    Text: IRF737LC Package Outline TO-220AB Outline Dimensions are shown in millimeters inches 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600)


    Original     		PDF IRF737LC O-220AB IRF1010 irf1010 marking 221

    TRANSISTORS 132 GD

    Abstract: IRF1010 IRF737LC
    Text: PD - 9.1314 IRF737LC PRELIMINARY HEXFET Power MOSFET Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS Extremely High Frequency Operation Repetitive Avalanche Rated VDSS = 300V RDS on = 0.75Ω ID = 6.1A Description This new series of Low Charge HEXFETs achieve


    Original     		PDF IRF737LC IRF1010 TRANSISTORS 132 GD IRF1010 IRF737LC

    Untitled

    Abstract: No abstract text available
    Text: IRF737LC, SiHF737LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 300 RDS(on) (Ω) VGS = 10 V 0.75 Qg (Max.) (nC) 17 Qgs (nC) 4.8 Qgd (nC) 7.6 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve


    Original     		PDF IRF737LC, SiHF737LC 12-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: IRF737LC, SiHF737LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 300 RDS(on) (Ω) VGS = 10 V 0.75 Qg (Max.) (nC) 17 Qgs (nC) 4.8 Qgd (nC) 7.6 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve


    Original     		PDF IRF737LC, SiHF737LC 18-Jul-08

    TRANSISTORS 132 GD

    Abstract: IRF1010 IRF737LC
    Text: PD - 9.1314 IRF737LC PRELIMINARY HEXFET Power MOSFET Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS Extremely High Frequency Operation Repetitive Avalanche Rated VDSS = 300V RDS on = 0.75Ω ID = 6.1A Description This new series of Low Charge HEXFETs achieve


    Original     		PDF IRF737LC 12-Mar-07 TRANSISTORS 132 GD IRF1010 IRF737LC

    TRANSISTORS 132 GD

    Abstract: IRF1010 IRF737LC
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1314 IRF737LC PRELIMINARY HEXFET Power MOSFET Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS Extremely High Frequency Operation Repetitive Avalanche Rated VDSS = 300V RDS on = 0.75Ω


    Original     		PDF IRF737LC IRF1010 TRANSISTORS 132 GD IRF1010 IRF737LC

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    IRGKI165F06

    Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
    Text: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)


    Original     		PDF OT-23) IRLML2402* IRLML2803 IRLML5103 IRLML6302* IRGKI165F06 IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103

    irf510 switch

    Abstract: IRFBA40N60C 800v irf IRL2505 IRF634L IRF540NL IRF520N IRFU9024N IRFU3910 IRL3215
    Text: International Rectifier The HEXFET Through Hole Navigator COLOR CODING: EXISTING Products NEW Products released to production in last 6-9 months UPCOMING Products to be released within next 3-4 months POTENTIAL Products no current plans. see bus.mgmt.


    Original     		PDF O-262 O-220 IRL3302 IRL3202 IRL3102 IRL3402 IRL3502 Super220TM O-247 irf510 switch IRFBA40N60C 800v irf IRL2505 IRF634L IRF540NL IRF520N IRFU9024N IRFU3910 IRL3215

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter

    IRF540 complementary

    Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
    Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3


    Original     		PDF RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    IRF540N

    Abstract: mosfet irf540n
    Text: PD - 91341A IRF540N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.052Ω G ID = 33A S Description Fifth Generation HEXFETs from International Rectifier


    Original     		PDF 1341A IRF540N O-220 IRF1010 IRF540N mosfet irf540n

    IRF530N

    Abstract: MOSFET IRF530n
    Text: PD - 91351A IRF530N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.11Ω G ID = 17A S Description Fifth Generation HEXFETs from International Rectifier


    Original     		PDF 1351A IRF530N O-220 IRF1010 IRF530N MOSFET IRF530n

    Untitled

    Abstract: No abstract text available
    Text: International S Rectifier PD 91314 IRF737LC preliminary HEXFET^ Power MOSFET • Reduced Gate Drive Requirement • Enhanced 30V V qs Rating • Reduced Ciss. Coss> C rss • Extrem ely High Frequency Operation • Repetitive Avalanche Rated Voss = 300V RDS on =


    OCR Scan     		PDF IRF737LC 002305b

    IRF737LCL

    Abstract: f1010h
    Text: PD - 9.1314 International M Rectifier IRF737LC PRELIMINARY HEXFET Power MOSFET • • • • • Reduced Gate Drive Requirement Enhanced 30V Vqs Rating Reduced Qss, Coss, Extremely High Frequency Operation Repetitive Avalanche Rated VDSS = 300V ^ D S o n =


    OCR Scan     		PDF IRF737LC IRF737LCL f1010h